Fairchild/ON Semiconductor FDC6321C
- Part Number:
- FDC6321C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2473299-FDC6321C
- Description:
- MOSFET N/P-CH 25V SSOT-6
- ECAD Model:
-
- Datasheet:
- FDC6321C
Fairchild/ON Semiconductor FDC6321C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6321C.
- Package / CaseTSOP-6
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
FDC6321C Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDC6321C or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDC6321C. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDC6321C or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDC6321C. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDC6321C More Descriptions
Transistor MOSFET N P Channel 25 Volt 0.68 Amp-0.46 Amp 6-Pin SuperSOT Tape and Reel
Trans MOSFET N/P-CH 25V 0.68A/0.46A 6-Pin SuperSOT T/R - Tape and Reel
Dual N/P Channel 25 V 0.33 O 0.7 W Surface Mount Digital Fet - SOT-23-6
Small Signal Field-Effect Transistor, 0.00068A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Chip Resistor - Surface Mount 1kOhm 0805 (2012 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 1K OHM 5% 1/2W 0805
These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:460mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:2.7A; Cont Current Id P Channel:1.6A; Current Id Max:680mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:680mohm; On State Resistance P Channel Max:450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Power Dissipation Pd:900mW; Pulse Current Idm:1.5A; SMD Marking:FDC6321C; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
Trans MOSFET N/P-CH 25V 0.68A/0.46A 6-Pin SuperSOT T/R - Tape and Reel
Dual N/P Channel 25 V 0.33 O 0.7 W Surface Mount Digital Fet - SOT-23-6
Small Signal Field-Effect Transistor, 0.00068A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Chip Resistor - Surface Mount 1kOhm 0805 (2012 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 1K OHM 5% 1/2W 0805
These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.
MOSFET, DUAL, NP, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:460mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:2.7A; Cont Current Id P Channel:1.6A; Current Id Max:680mA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; On State Resistance N Channel Max:680mohm; On State Resistance P Channel Max:450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Power Dissipation Pd:900mW; Pulse Current Idm:1.5A; SMD Marking:FDC6321C; Termination Type:SMD; Uni / Bi Directional Polarity:NP; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
The three parts on the right have similar specifications to FDC6321C.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypeNumber of PinsWeightTransistor Element MaterialOperating TemperatureSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryMax Power DissipationTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminationTerminal FinishVoltage - Rated DCDual Supply VoltageAdditional FeatureView Compare
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FDC6321CTSOP-6Tape & Reel (TR)RoHS Compliant------------------------------------------------------------- -
SOT-23-6 Thin, TSOT-23-6Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface Mount636mgSILICON-55°C~150°C TJPowerTrench®2017e3yesActive1 (Unlimited)6EAR9995MOhmOther Transistors960mWGULL WING2.5A22DualENHANCEMENT MODE960mW4.5 ns700mWN and P-ChannelSWITCHING95m Ω @ 2.5A, 10V3V @ 250μA282pF @ 15V2.5A 2A6.6nC @ 10V13ns30VN-CHANNEL AND P-CHANNEL13 ns11 ns2.5A1.8V25V-30VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.8 V1mm3mm1.7mmNo SVHCNoLead Free-----
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SOT-23-6 Thin, TSOT-23-6Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 2 days ago)10 Weeks-Surface MountSurface Mount636mgSILICON-55°C~150°C TJPowerTrench®2001e3yesActive1 (Unlimited)6EAR9990MOhmOther Transistors960mWGULL WING-2.5A22DualENHANCEMENT MODE960mW9 ns700mW2 P-Channel (Dual)SWITCHING90m Ω @ 2.5A, 4.5V1.5V @ 250μA455pF @ 6V2.5A8nC @ 4.5V14ns--14 ns21 ns-2.5A-700mV8V-12VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate700 mV1.1mm3mm1.7mmNo SVHCNoLead FreeSMD/SMTTin (Sn)-12V12V-
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SOT-23-6 Thin, TSOT-23-6Tape & Reel (TR)ROHS3 CompliantACTIVE (Last Updated: 1 day ago)10 Weeks-Surface MountSurface Mount636mgSILICON-55°C~150°C TJ-1997e3yesActive1 (Unlimited)6EAR99450mOhmFET General Purpose Power900mWGULL WING680mA22DualENHANCEMENT MODE900mW3 ns700mW2 N-Channel (Dual)SWITCHING450m Ω @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V-2.3nC @ 4.5V8.5ns--13 ns17 ns680mA800mV8V25VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate800 mV1.1mm3mm1.7mmNo SVHCNoLead FreeSMD/SMTTin (Sn)25V25VLOGIC LEVEL COMPATIBLE
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