Fairchild/ON Semiconductor FDC6020C
- Part Number:
- FDC6020C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477728-FDC6020C
- Description:
- MOSFET N/P-CH 20V 6SSOT
- ECAD Model:
-
- Datasheet:
- FDC6020C
Fairchild/ON Semiconductor FDC6020C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6020C.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-SSOT Flat-lead, SuperSOT™-6 FLMP
- Number of Pins6
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation1.2W
- Current Rating5.9A
- Number of Elements2
- Power Dissipation1.6W
- FET TypeN and P-Channel
- Rds On (Max) @ Id, Vgs27m Ω @ 5.9A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds677pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5.9A 4.2A
- Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
- Rise Time8ns
- Fall Time (Typ)8 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)5.9A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- FET FeatureLogic Level Gate
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
FDC6020C Description
The FDC6020C is an N & P-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance.
FDC6020C Features
Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ@ VGS = – 4.5 V
RDS(ON) = 82 mΩ @ VGS = – 2.5 V
Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON).
FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size
FDC6020C Applications
DC/DC converter
Load switch
Motor Driving
The FDC6020C is an N & P-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance.
FDC6020C Features
Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ@ VGS = – 4.5 V
RDS(ON) = 82 mΩ @ VGS = – 2.5 V
Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON).
FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size
FDC6020C Applications
DC/DC converter
Load switch
Motor Driving
FDC6020C More Descriptions
Trans MOSFET N/P-CH 20V 5.9A/4.2A 6-Pin SuperSOT T/R
Complementary PowerTrench MOSFET Recommend FDC6020C_F077
MOSFET, DUAL, NP, SMD, FLMP, SSOT-6; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:5.9A; Resistance, Rds On:27mohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:SSOT-6 FLMP; Termination Type:SMD; Current, Id Cont N Channel:5.9A; Current, Id Cont P Channel:4.2A; No. of Pins:6; Power Dissipation:1.6W; Power, Pd:1.6W; Resistance, Rds on N Channel Max:0.027ohm; Resistance, Rds on P Channel Max:0.055ohm; Voltage, Vds:20V; Voltage, Vgs th Max:1.5V
Complementary PowerTrench MOSFET Recommend FDC6020C_F077
MOSFET, DUAL, NP, SMD, FLMP, SSOT-6; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:5.9A; Resistance, Rds On:27mohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:SSOT-6 FLMP; Termination Type:SMD; Current, Id Cont N Channel:5.9A; Current, Id Cont P Channel:4.2A; No. of Pins:6; Power Dissipation:1.6W; Power, Pd:1.6W; Resistance, Rds on N Channel Max:0.027ohm; Resistance, Rds on P Channel Max:0.055ohm; Voltage, Vds:20V; Voltage, Vgs th Max:1.5V
The three parts on the right have similar specifications to FDC6020C.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationCurrent RatingNumber of ElementsPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET FeatureREACH SVHCRoHS StatusLead FreeSupplier Device PackagePower - MaxDrain to Source Voltage (Vdss)Lifecycle StatusFactory Lead TimeContact PlatingWeightTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceSubcategoryTerminal FormNumber of ChannelsElement ConfigurationOperating ModeTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeFET TechnologyMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthRadiation HardeningTerminationTerminal FinishAdditional FeatureVoltage - Rated DCDual Supply VoltageView Compare
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FDC6020CSurface MountSurface Mount6-SSOT Flat-lead, SuperSOT™-6 FLMP6-55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)1.2W5.9A21.6WN and P-Channel27m Ω @ 5.9A, 4.5V1.5V @ 250μA677pF @ 10V5.9A 4.2A8nC @ 4.5V8ns8 ns26 ns5.9A1V12V20VLogic Level GateNo SVHCRoHS CompliantLead Free----------------------------------- -
-Surface Mount6-SSOT Flat-lead, SuperSOT™-6 FLMP--55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)----2 P-Channel (Dual)44mOhm @ 5A, 4.5V1.5V @ 250μA992pF @ 10V5A14nC @ 4.5V-------Logic Level Gate---SuperSOT™-6900mW20V-------------------------------
-
Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-55°C~150°C TJTape & Reel (TR)PowerTrench®Active1 (Unlimited)960mW2.5A2960mWN and P-Channel95m Ω @ 2.5A, 10V3V @ 250μA282pF @ 15V2.5A 2A6.6nC @ 10V13ns13 ns11 ns2.5A1.8V25V-30VLogic Level GateNo SVHCROHS3 CompliantLead Free-700mW30VACTIVE (Last Updated: 2 days ago)10 WeeksTin36mgSILICON2017e3yes6EAR9995MOhmOther TransistorsGULL WING2DualENHANCEMENT MODE4.5 nsSWITCHINGN-CHANNEL AND P-CHANNELMETAL-OXIDE SEMICONDUCTOR150°C1.8 V1mm3mm1.7mmNo-----
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-55°C~150°C TJTape & Reel (TR)-Active1 (Unlimited)900mW680mA2900mW2 N-Channel (Dual)450m Ω @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V-2.3nC @ 4.5V8.5ns13 ns17 ns680mA800mV8V25VLogic Level GateNo SVHCROHS3 CompliantLead Free-700mW-ACTIVE (Last Updated: 1 day ago)10 Weeks-36mgSILICON1997e3yes6EAR99450mOhmFET General Purpose PowerGULL WING2DualENHANCEMENT MODE3 nsSWITCHING-METAL-OXIDE SEMICONDUCTOR150°C800 mV1.1mm3mm1.7mmNoSMD/SMTTin (Sn)LOGIC LEVEL COMPATIBLE25V25V
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