Fairchild/ON Semiconductor FDB52N20TM

Name: FDB52N20TM
Brand: Fairchild/ON Semiconductor
SKU: 2484654-FDB52N20TM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDB52N20TM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484654-FDB52N20TM

Description:: MOSFET N-CH 200V 52A D2PAK

ECAD Model:

Datasheet:: FDB52N20TM

Specifications

Fairchild/ON Semiconductor FDB52N20TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB52N20TM.

Lifecycle Status
ACTIVE (Last Updated: 22 hours ago)
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
UniFET™
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
49mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
52A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
357W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
357W
Case Connection
DRAIN
Turn On Delay Time
53 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
49m Ω @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
52A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Rise Time
160ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
150 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
52A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
208A
Avalanche Energy Rating (Eas)
2520 mJ
Max Junction Temperature (Tj)
150°C
Nominal Vgs
5 V
Height
5.08mm
Length
9.98mm
Width
10.16mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDB52N20TM Description
UniFETM MOSFET FDB52N20TM is Fairchild Semiconductor's high voltage MOSFET FDB52N20TM series based on planar stripe and DMOS technology. The MOSFET is tailor-made to reduce on-resistance to provide better switching performance and higher avalanche energy intensity. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD), TV, PowerATX and electronic light bulbs. FDB52N20TM Features
·RDs(on)=49mΩ(Max.)@VGs=10 V1=26A·Low Gate Charge(Typ.49nC)·Low Css(Typ.66 pF)。100% Avalanche Tested FDB52N20TM Applications
·PDPTV ·Lighting ·Uninterruptible Power Supply ·AC-DC Power Supply

FDB52N20TM More Descriptions

In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK
N-Channel 200 V 0.049 Ohm Surface Mount UniFET Mosfet - D2PAK-3
Trans MOSFET N-CH 200V 52A 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Product Comparison

The three parts on the right have similar specifications to FDB52N20TM.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
FDB52N20TM

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 22 hours ago)

6 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

2005

e3

yes

Active

1 (Unlimited)

2

EAR99

49mOhm

FET General Purpose Power

200V

MOSFET (Metal Oxide)

GULL WING

52A

R-PSSO-G2

1

1

357W Tc

Single

ENHANCEMENT MODE

357W

DRAIN

53 ns

N-Channel

SWITCHING

49m Ω @ 26A, 10V

5V @ 250μA

2900pF @ 25V

52A Tc

63nC @ 10V

160ns

10V

±30V

150 ns

48 ns

52A

5V

30V

200V

208A

2520 mJ

150°C

5 V

5.08mm

9.98mm

10.16mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-
FDB5800_F085

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

242W Tc

-

-

-

-

-

N-Channel

-

6mOhm @ 80A, 10V

2.5V @ 250μA

6625pF @ 15V

14A Ta 80A Tc

135nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK

60V

FDB52N20TM vs FDB5800_F085
FDB5690

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-65°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

58W Tc

-

-

-

-

-

N-Channel

-

27mOhm @ 16A, 10V

4V @ 250μA

1.12pF @ 25V

32A Tc

33nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-263AB

60V

FDB52N20TM vs FDB5690
FDB5800

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 23 hours ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

2

EAR99

6MOhm

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

-

242W Tc

Single

ENHANCEMENT MODE

242W

DRAIN

20.3 ns

N-Channel

SWITCHING

6m Ω @ 80A, 10V

2.5V @ 250μA

6625pF @ 15V

14A Ta 80A Tc

135nC @ 10V

22ns

4.5V 10V

±20V

12.1 ns

27.1 ns

80A

1V

20V

60V

-

652 mJ

-

-

4.83mm

10.67mm

11.33mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

FDB52N20TM vs FDB5800

Certification

Related parts for FDB52N20TM

FDB5645

Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A TO-263AB
FDB5800_F085

Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A D2PAK
FDB5690

Fairchild/ON Semiconductor

MOSFET N-CH 60V 32A TO-263AB
FDB52N20TM

Fairchild/ON Semiconductor

MOSFET N-CH 200V 52A D2PAK
FDB5800

Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A D2PAK

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FDB52N20TM Specification

Part Number	Manufacturers	Description	Stock	Price
FDB52N20TM DISTI #	ON Semiconductor	Trans MOSFET N-CH 200V 52A 3-Pin(2 Tab) D2PAK T/R	5600	800 $0.7114
FDB52N20TM DISTI #	ON Semiconductor	MOSFET N-CH 200V 52A D2PAK RoHS: Compliant	3613	1 $2.87 10 $2.6 100 $2.1048
FDB52N20TM DISTI #	ON Semiconductor	MOSFET N-CH 200V 52A D2PAK RoHS: Compliant	3613	1 $2.87 10 $2.6 100 $2.1048
FDB52N20TM DISTI #	ON Semiconductor	MOSFET N-CH 200V 52A D2PAK RoHS: Compliant	3200	800 $1.45864
FDB52N20TM DISTI #	ON Semiconductor	Trans MOSFET N-CH 200V 52A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	385	10 $1.8498 25 $1.8472 100 $1.5059 250 $1.5044
FDB52N20TM DISTI #	ON Semiconductor	Trans MOSFET N-CH 200V 52A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	1248	800 $0.9869 1600 $0.8079 3200 $0.7399 4800 $0.6829 8000 $0.6349
FDB52N20TM DISTI #	ON Semiconductor	Trans MOSFET N-CH 200V 52A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	800 $0.9019 1600 $0.8959 3200 $0.8839 4800 $0.8729 8000 $0.8509
FDB52N20TM DISTI #	ON Semiconductor	Trans MOSFET N-CH 200V 52A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0
FDB52N20TM DISTI #	ON Semiconductor	Trans MOSFET N-CH 200V 52A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	1 $2.42 10 $2.07 25 $1.94 50 $1.8 100 $1.67 250 $1.57 500 $1.47
FDB52N20TM DISTI #	ON Semiconductor	MOSFET Transistor, N Channel, 52 A, 200 V, 0.041 o	1539	1 $2.47 10 $2.12 25 $1.98 50 $1.84 100 $1.71 250 $1.6 500 $1.5
FDB52N20TM DISTI #	ON Semiconductor	N CHANNEL MOSFET, 200V, 52A, D2-PAK, Transistor P	0	1 $2.42 10 $2.07 25 $1.94 50 $1.8 100 $1.67 250 $1.57 500 $1.47
FDB52N20TM. DISTI #	ON Semiconductor	UF 200V 49MOHM D2PAK	800	1 $0.902 1600 $0.896 3200 $0.884 4800 $0.873 8000 $0.851
FDB52N20TM DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 52A I(D), 200V, 0.0 RoHS: Compliant	296	1 $1.31 25 $1.22 100 $1.17 500 $1.12 1000 $1.07
FDB52N20TM DISTI #	ON Semiconductor	MOSFET 200V N-Ch MOSFET RoHS: Compliant	24209	1 $2.34 10 $1.99 100 $1.59 500 $1.39
FDB52N20TM DISTI #	ON Semiconductor	N-Channel 200 V 0.049 Ohm Surface Mount UniFET Mos RoHS: Compliant	800	800 $1.02
FDB52N20TM DISTI #	Fairchild Semiconductor Corporation		324	1 $2.88 96 $1.44 209 $1.332
FDB52N20TM DISTI #	Fairchild Semiconductor Corporation		72	1 $3.0498 11 $2.2365 35 $2.0332
FDB52N20TM DISTI #	ON Semiconductor	MOSFET N-CHANNEL 200V 52A UNIFET D2PAK, RL	1525	50 $1.248 100 $1.082
FDB52N20TM DISTI #	ON Semiconductor	MOSFET N-CHANNEL 200V 52A UNIFET D2PAK, PK	30	5 $1.476 50 $1.248 100 $1.082
FDB52N20TM DISTI #	ON Semiconductor	Transistor: N-MOSFET, unipolar, 200V, 52A, 357	396	1 $1.57 5 $1.35 25 $1.08 100 $0.98 500 $0.91
FDB52N20TM DISTI #	ON Semiconductor	500 V, 52 A, 49 MILLI OHM N-CHANNEL UNIFET MOSFET RoHS: Compliant	1600
FDB52N20TM DISTI #	Fairchild Semiconductor Corporation	INSTOCK	484
FDB52N20TM DISTI #	ON Semiconductor	MOSFET, N-CH, 200V, 52A, TO-263AB-2 RoHS: Compliant	0	1 $3.71 10 $3.15 100 $2.52 500 $2.2 800 $2.2
FDB52N20TM DISTI #	ON Semiconductor	MOSFET, N-CH, 200V, 52A, TO-263AB-2 RoHS: Compliant	1539	1 $3.71 10 $3.15 100 $2.52 500 $2.2 800 $2.2
FDB52N20TM. DISTI #	ON Semiconductor	N CHANNEL MOSFET, 200V, 52A, D2-PAK RoHS: Compliant	911	1 $1.44
FDB52N20TM DISTI #	ON Semiconductor	MOSFET, N-CH, 200V, 52A, TO-263AB-2 RoHS: Compliant	1602	1 $2.04 10 $1.53 100 $1.22 250 $1.15 500 $1.07
FDB52N20TM DISTI #	Fairchild Semiconductor Corporation	RoHS: Compliant	57070	800 $2.32 57070 $2.11
FDB52N20TM DISTI #	Fairchild Semiconductor Corporation	RoHS (ship within 1day)	405	1 $2.75 10 $1.74 50 $1.3 100 $0.94 500 $0.84 1000 $0.72

FDB52N2~~(5)~~
FDB52N~~(5)~~
FDB52~~(5)~~
FDB5~~(15)~~
FDB~~(116)~~

Fairchild/ON Semiconductor FDB52N20TM

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