Fairchild/ON Semiconductor FDA70N20
- Part Number:
- FDA70N20
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2487024-FDA70N20
- Description:
- MOSFET N-CH 200V 70A TO-3P
- Datasheet:
- FDA70N20
Fairchild/ON Semiconductor FDA70N20 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDA70N20.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time7 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3P-3, SC-65-3
- Number of Pins3
- Weight6.401g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesUniFET™
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance35MOhm
- Terminal FinishTin (Sn)
- Additional FeatureFAST SWITCHING
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating70A
- Number of Elements1
- Power Dissipation-Max417W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation417W
- Turn On Delay Time71 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs35m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3970pF @ 25V
- Current - Continuous Drain (Id) @ 25°C70A Tc
- Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
- Rise Time235ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)39 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)70A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)280A
- Nominal Vgs5 V
- Height20.1mm
- Length15.8mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDA70N20 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3970pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 70A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 280A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 71 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
FDA70N20 Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 280A.
a threshold voltage of 5V
FDA70N20 Applications
There are a lot of ON Semiconductor
FDA70N20 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3970pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 70A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 280A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 71 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
FDA70N20 Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 280A.
a threshold voltage of 5V
FDA70N20 Applications
There are a lot of ON Semiconductor
FDA70N20 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDA70N20 More Descriptions
N-Channel Power MOSFET, UniFETTM, 200V, 70A, 35mΩ, TO-3P
MOSFET N-CH 200V 70A TO-3P / Trans MOSFET N-CH 200V 70A 3-Pin(3 Tab) TO-3P Tube
N-Channel 200 V 0.035 Ohm Flange Mount UniFET Mosfet - TO-3PN
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:200V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:417W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Package / Case:TO-3P; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET N-CH 200V 70A TO-3P / Trans MOSFET N-CH 200V 70A 3-Pin(3 Tab) TO-3P Tube
N-Channel 200 V 0.035 Ohm Flange Mount UniFET Mosfet - TO-3PN
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:200V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:417W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Package / Case:TO-3P; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
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