FDA70N20

Fairchild/ON Semiconductor FDA70N20

Part Number:
FDA70N20
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2487024-FDA70N20
Description:
MOSFET N-CH 200V 70A TO-3P
ECAD Model:
Datasheet:
FDA70N20

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Specifications
Fairchild/ON Semiconductor FDA70N20 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDA70N20.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Weight
    6.401g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    UniFET™
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    35MOhm
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    FAST SWITCHING
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    70A
  • Number of Elements
    1
  • Power Dissipation-Max
    417W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    417W
  • Turn On Delay Time
    71 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 35A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3970pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    70A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    86nC @ 10V
  • Rise Time
    235ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    39 ns
  • Turn-Off Delay Time
    65 ns
  • Continuous Drain Current (ID)
    70A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    200V
  • Pulsed Drain Current-Max (IDM)
    280A
  • Nominal Vgs
    5 V
  • Height
    20.1mm
  • Length
    15.8mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDA70N20 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3970pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 70A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 280A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 71 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

FDA70N20 Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 280A.
a threshold voltage of 5V


FDA70N20 Applications
There are a lot of ON Semiconductor
FDA70N20 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDA70N20 More Descriptions
N-Channel Power MOSFET, UniFETTM, 200V, 70A, 35mΩ, TO-3P
MOSFET N-CH 200V 70A TO-3P / Trans MOSFET N-CH 200V 70A 3-Pin(3 Tab) TO-3P Tube
N-Channel 200 V 0.035 Ohm Flange Mount UniFET Mosfet - TO-3PN
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:200V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:417W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Package / Case:TO-3P; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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