Fairchild/ON Semiconductor FCPF600N60Z
- Part Number:
- FCPF600N60Z
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2484257-FCPF600N60Z
- Description:
- MOSFET N CH 600V 7.4A TO-220F
- ECAD Model:
-
- Datasheet:
- FCPF600N60Z
Fairchild/ON Semiconductor FCPF600N60Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCPF600N60Z.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperFET® II
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements1
- Power Dissipation-Max89W Tc
- Element ConfigurationSingle
- Power Dissipation28W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs600m Ω @ 3.7A, 10V
- Vgs(th) (Max) @ Id3.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1120pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.4A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
- Rise Time7ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time39 ns
- Continuous Drain Current (ID)7.4A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage650V
- Height16.07mm
- Length10.36mm
- Width4.9mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FCPF600N60Z Description
FCPF600N60Z is a 600v N-Channel SUPERFET? II FAST Power MOSFET. SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, the SuperFET II MOSFET FCPF600N60Z is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCPF600N60Z Features
650 V at TJ = 150°C
Max. RDS(on) = 600 mΩ
Ultra-Low Gate Charge ( Typ. Qg = 20 nC )
Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )
100% Avalanche Tested
ESD Improved Capacity
FCPF600N60Z Applications
LCD
LED
PDP TV and Monitor Lightning
Solar Inverter
AC-DC Power Supply
FCPF600N60Z is a 600v N-Channel SUPERFET? II FAST Power MOSFET. SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, the SuperFET II MOSFET FCPF600N60Z is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCPF600N60Z Features
650 V at TJ = 150°C
Max. RDS(on) = 600 mΩ
Ultra-Low Gate Charge ( Typ. Qg = 20 nC )
Low Effective Output Capacitance ( Typ. Coss.eff = 74 pF )
100% Avalanche Tested
ESD Improved Capacity
FCPF600N60Z Applications
LCD
LED
PDP TV and Monitor Lightning
Solar Inverter
AC-DC Power Supply
FCPF600N60Z More Descriptions
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F
SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
The three parts on the right have similar specifications to FCPF600N60Z.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRoHS StatusLead FreeResistanceNumber of ChannelsView Compare
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FCPF600N60ZACTIVE (Last Updated: 3 days ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack32.27g-55°C~150°C TJTubeSuperFET® II2012e3yesActive1 (Unlimited)EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED189W TcSingle28W13 nsN-Channel600m Ω @ 3.7A, 10V3.5V @ 250μA1120pF @ 25V7.4A Tc26nC @ 10V7ns600V10V±20V9 ns39 ns7.4A20V650V16.07mm10.36mm4.9mmROHS3 CompliantLead Free--- -
ACTIVE (Last Updated: 3 days ago)17 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-2.27g-55°C~150°C TJTubeSuperFET® II-e3yesActive1 (Unlimited)EAR99Tin (Sn)-MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED-19.2W TcSingle-10 nsN-Channel4.3 Ω @ 800mA, 10V4.5V @ 160μA355pF @ 100V1.6A Tc8.8nC @ 10V6.5ns800V10V±20V16 ns21 ns1.6A30V----ROHS3 Compliant-4.3Ohm1
-
--Through HoleThrough HoleTO-220-3 Full Pack---55°C~150°C TJTubeSuperFET™2013--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----39W Tc---N-Channel190m Ω @ 10A, 10V5V @ 250μA3080pF @ 25V20A Tc98nC @ 10V-600V10V±30V--20A-----RoHS Compliant---
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ACTIVE (Last Updated: 3 weeks ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack, Formed Leads-2.565g-55°C~150°C TJTubeSupreMOS™--yesActive1 (Unlimited)---MOSFET (Metal Oxide)----29.8W TcSingle--N-Channel385m Ω @ 4.5A, 10V4V @ 250μA1240pF @ 100V9A Tc29nC @ 10V-600V10V±30V--9A-----ROHS3 Compliant---
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