Fairchild/ON Semiconductor FCP20N60
- Part Number:
- FCP20N60
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479140-FCP20N60
- Description:
- MOSFET N-CH 600V 20A TO-220
- ECAD Model:
-
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor FCP20N60 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCP20N60.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 days ago)
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperFET™
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance190MOhm
- Terminal FinishTin (Sn)
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating20A
- Number of Elements1
- Power Dissipation-Max208W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation208W
- Turn On Delay Time62 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs190m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3080pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
- Rise Time140ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time230 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)60A
- Avalanche Energy Rating (Eas)690 mJ
- Nominal Vgs5 V
- Height16.3mm
- Length10.67mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FCP20N60 Description
FCP20N60 belongs to the family of N-channel SuperFET? MOSFETs manufactured by ON Semiconductor, which are designed based on the charge balance technology to ensure low on-resistance and lower gate charge performance. On the basis of the advanced technology, it features excellent switching performance, dv/dt rate, and higher avalanche energy, making FCP20N60 well suited for switching applications.
FCP20N60 Features
Charge balance technology
Low on-resistance
Lower gate charge performance
FCP20N60 Applications
Solar inverter
FPD TV power
AC-DC power supply
Server/telecom power
Industrial power applications
FCP20N60 belongs to the family of N-channel SuperFET? MOSFETs manufactured by ON Semiconductor, which are designed based on the charge balance technology to ensure low on-resistance and lower gate charge performance. On the basis of the advanced technology, it features excellent switching performance, dv/dt rate, and higher avalanche energy, making FCP20N60 well suited for switching applications.
FCP20N60 Features
Charge balance technology
Low on-resistance
Lower gate charge performance
FCP20N60 Applications
Solar inverter
FPD TV power
AC-DC power supply
Server/telecom power
Industrial power applications
FCP20N60 More Descriptions
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220
MOSFET N-CH 600V 20A TO-220 / Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-220 Tube
Single N-Channel 600 V 208 W 98 nC Silicon Through Hole Mosfet - TO-220-3
Res Thin Film 0603 4.7K Ohm 0.1% 0.1W(1/10W) ±15ppm/C Molded SMD Automotive Punched T/R
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.19ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
MOSFET N-CH 600V 20A TO-220 / Trans MOSFET N-CH 600V 20A 3-Pin(3 Tab) TO-220 Tube
Single N-Channel 600 V 208 W 98 nC Silicon Through Hole Mosfet - TO-220-3
Res Thin Film 0603 4.7K Ohm 0.1% 0.1W(1/10W) ±15ppm/C Molded SMD Automotive Punched T/R
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.19ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
The three parts on the right have similar specifications to FCP20N60.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)HTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)SubcategoryView Compare
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FCP20N60ACTIVE, NOT REC (Last Updated: 2 days ago)4 WeeksThrough HoleThrough HoleTO-220-331.8gSILICON-55°C~150°C TJTubeSuperFET™2013e3yesNot For New Designs1 (Unlimited)3EAR99190MOhmTin (Sn)600VMOSFET (Metal Oxide)20A1208W TcSingleENHANCEMENT MODE208W62 nsN-ChannelSWITCHING190m Ω @ 10A, 10V5V @ 250μA3080pF @ 25V20A Tc98nC @ 10V140ns10V±30V65 ns230 ns20A5VTO-220AB30V600V60A690 mJ5 V16.3mm10.67mm4.7mmNo SVHCNoROHS3 CompliantLead Free------- -
---Through HoleTO-220-3----55°C~150°C TJTubeSuperFET™2011--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--208W Tc----N-Channel-190mOhm @ 10A, 10V5V @ 250μA3080pF @ 25V20A Tc98nC @ 10V-10V±30V-----------------TO-220-3600V----
-
ACTIVE (Last Updated: 2 days ago)12 WeeksThrough HoleThrough HoleTO-220-3-1.8g--55°C~150°C TJTubeSuperFET® II2014e3yesActive1 (Unlimited)-EAR99-Tin (Sn)-MOSFET (Metal Oxide)--278W TcSingle---N-Channel-220m Ω @ 11.5A, 10V4.5V @ 2.3mA4560pF @ 100V23A Tc105nC @ 10V-10V±20V--23A------------ROHS3 Compliant--800V8541.21.00.95NOT SPECIFIEDNOT SPECIFIED-
-
ACTIVE (Last Updated: 2 days ago)12 WeeksThrough HoleThrough HoleTO-220-331.8g--55°C~150°C TJTubeSuperFET® II2012e3yesActive1 (Unlimited)-EAR99-Tin (Sn)-MOSFET (Metal Oxide)-1156W TcSingle-156W20 nsN-Channel-260m Ω @ 7.5A, 10V3.5V @ 250μA2500pF @ 25V15A Tc62nC @ 10V11ns10V±20V13 ns13 ns15A2.5V-20V650V---16.51mm10.67mm4.83mmNo SVHC-ROHS3 CompliantLead Free-600V-NOT SPECIFIEDNOT SPECIFIEDFET General Purpose Power
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