Fairchild/ON Semiconductor FCH76N60N
- Part Number:
- FCH76N60N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849387-FCH76N60N
- Description:
- MOSFET N-CH 600V 76A TO-247
- Datasheet:
- FCH76N60N
Fairchild/ON Semiconductor FCH76N60N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCH76N60N.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSupreMOS™
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max543W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation543W
- Turn On Delay Time34 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs36m Ω @ 38A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds12385pF @ 100V
- Current - Continuous Drain (Id) @ 25°C76A Tc
- Gate Charge (Qg) (Max) @ Vgs285nC @ 10V
- Rise Time24ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)32 ns
- Turn-Off Delay Time235 ns
- Continuous Drain Current (ID)76A
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)228A
- Avalanche Energy Rating (Eas)8022 mJ
- Height21mm
- Length15.95mm
- Width5.03mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FCH76N60N Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate.
FCH76N60N Features
RDS(on) = 28 m (Typ.) @ VGS = 10 V, ID = 38 A
Ultra Low Gate Charge (Typ. Qg = 218 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)
100% Avalanche Tested
This Device is Pb?Free and is RoHS Compliant
FCH76N60N Applications
Solar Inverter
AC?DC Power Supply
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate.
FCH76N60N Features
RDS(on) = 28 m (Typ.) @ VGS = 10 V, ID = 38 A
Ultra Low Gate Charge (Typ. Qg = 218 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)
100% Avalanche Tested
This Device is Pb?Free and is RoHS Compliant
FCH76N60N Applications
Solar Inverter
AC?DC Power Supply
FCH76N60N More Descriptions
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 October 2023
L293DNE Quadruple Half-H Driver: Symbol, Features, Advantages and More
Ⅰ. Overview of L293DNE quadruple half-H driverⅡ. L293DNE symbol, footprint and pin configurationⅢ. Technical parameters of L293DNE/aⅣ. What are the features of L293DNE?Ⅴ. Working principle of L293DNEⅥ. What... -
26 October 2023
TL494CN PWM Controller: Pin Configuration, Layout Guidelines and Working Principle
Ⅰ. Overview of TL494CN PWM controllerⅡ. Symbol, footprint and pin configuration of TL494CN PWM controllerⅢ. Technical parameters of TL494CN PWM controllerⅣ. What are the features of TL494CN PWM... -
27 October 2023
CD4511BE Decoder: Pin Configuration, Features, Circuit and Applications
Ⅰ. What is a decoder?Ⅱ. Overview of CD4511BE decoderⅢ. Symbol, footprint and pin configuration of CD4511BE decoderⅣ. Technical parameters of CD4511BE decoderⅤ. What are the features of CD4511BE... -
27 October 2023
A Complete Guide to The BC639 BJT Transistor
Ⅰ. Overview of BC639 transistorⅡ. BC639 transistor symbol, footprint and pin configurationⅢ. Technical parameters of BC639 transistorⅣ. Characteristics of BC639 transistorⅤ. Working principle of BC639 transistorⅥ. Maximum ratings...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.