FCH072N60F

Fairchild/ON Semiconductor FCH072N60F

Part Number:
FCH072N60F
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848559-FCH072N60F
Description:
MOSFET N-CH 600V 52A TO247
ECAD Model:
Datasheet:
FCH072N60F

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Specifications
Fairchild/ON Semiconductor FCH072N60F technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCH072N60F.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    FRFET®, SuperFET® II
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    481W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    481W
  • Turn On Delay Time
    43 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    72m Ω @ 26A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8660pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    52A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    215nC @ 10V
  • Rise Time
    38ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    140 ns
  • Continuous Drain Current (ID)
    52A
  • JEDEC-95 Code
    TO-247AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.072Ohm
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    156A
  • Avalanche Energy Rating (Eas)
    1128 mJ
  • Height
    20.82mm
  • Length
    15.87mm
  • Width
    4.82mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The FCH072N60F is an 600 V, 52 A, 72 mΩ N-Channel SuperFET? II FRFET? MOSFET. Fairchild Semiconductor's SuperFET? II MOSFET of FCH072N60F is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the SuperFET II MOSFET is well suited for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFETII FRFET? MOSFETs can eliminate unnecessary components and improve system reliability.

Features
? Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF) ? 100% Avalanche Tested ? RoHS Compliant ? 650 V @ TJ = 150°C ? Typ. RDS(on) = 65 mΩ ? Ultra Low Gate Charge (Typ. Qg = 165 nC)

Applications
? Switching Applications ? Automotive Electronics ? As Power Converters ? Accelerometer ? Amplifiers
FCH072N60F More Descriptions
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247
MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Product Comparison
The three parts on the right have similar specifications to FCH072N60F.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    View Compare
  • FCH072N60F
    FCH072N60F
    ACTIVE (Last Updated: 5 days ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    FRFET®, SuperFET® II
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.29.00.95
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    481W Tc
    Single
    ENHANCEMENT MODE
    481W
    43 ns
    N-Channel
    SWITCHING
    72m Ω @ 26A, 10V
    5V @ 250μA
    8660pF @ 100V
    52A Tc
    215nC @ 10V
    38ns
    10V
    ±20V
    25 ns
    140 ns
    52A
    TO-247AB
    20V
    0.072Ohm
    600V
    156A
    1128 mJ
    20.82mm
    15.87mm
    4.82mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FCH077N65F_F155
    -
    -
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    -
    -
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    -
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    -
    -
    -
    -
    -
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    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    5V @ 5.4mA
    ±20V
    MOSFET (Metal Oxide)
    TO-247 Long Leads
    FRFET®, SuperFET® II
    77 mOhm @ 27A, 10V
    481W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    7109pF @ 100V
    164nC @ 10V
    N-Channel
    -
    10V
    650V
    54A (Tc)
    -
    -
    -
    -
  • FCH070N60E
    ACTIVE (Last Updated: 5 days ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    6.39g
    -
    -55°C~150°C TJ
    Tube
    SuperFET® II
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    8541.29.00.95
    -
    MOSFET (Metal Oxide)
    -
    481W Tc
    Single
    -
    -
    -
    N-Channel
    -
    70m Ω @ 26A, 10V
    3.5V @ 250μA
    4925pF @ 380V
    52A Tc
    166nC @ 10V
    -
    10V
    ±20V
    -
    -
    52A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    600V
  • FCH041N65F_F155
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    5V @ 7.6mA
    ±20V
    MOSFET (Metal Oxide)
    TO-247 Long Leads
    FRFET®, SuperFET® II
    41 mOhm @ 38A, 10V
    595W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    13020pF @ 100V
    294nC @ 10V
    N-Channel
    -
    10V
    650V
    76A (Tc)
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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