Fairchild/ON Semiconductor FCH072N60F
- Part Number:
- FCH072N60F
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848559-FCH072N60F
- Description:
- MOSFET N-CH 600V 52A TO247
- Datasheet:
- FCH072N60F
Fairchild/ON Semiconductor FCH072N60F technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCH072N60F.
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesFRFET®, SuperFET® II
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max481W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation481W
- Turn On Delay Time43 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs72m Ω @ 26A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8660pF @ 100V
- Current - Continuous Drain (Id) @ 25°C52A Tc
- Gate Charge (Qg) (Max) @ Vgs215nC @ 10V
- Rise Time38ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)52A
- JEDEC-95 CodeTO-247AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.072Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)156A
- Avalanche Energy Rating (Eas)1128 mJ
- Height20.82mm
- Length15.87mm
- Width4.82mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The FCH072N60F is an 600 V, 52 A, 72 mΩ N-Channel SuperFET? II FRFET? MOSFET. Fairchild Semiconductor's SuperFET? II MOSFET of FCH072N60F is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the SuperFET II MOSFET is well suited for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFETII FRFET? MOSFETs can eliminate unnecessary components and improve system reliability.
Features
? Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF) ? 100% Avalanche Tested ? RoHS Compliant ? 650 V @ TJ = 150°C ? Typ. RDS(on) = 65 mΩ ? Ultra Low Gate Charge (Typ. Qg = 165 nC)
Applications
? Switching Applications ? Automotive Electronics ? As Power Converters ? Accelerometer ? Amplifiers
The FCH072N60F is an 600 V, 52 A, 72 mΩ N-Channel SuperFET? II FRFET? MOSFET. Fairchild Semiconductor's SuperFET? II MOSFET of FCH072N60F is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the SuperFET II MOSFET is well suited for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFETII FRFET? MOSFETs can eliminate unnecessary components and improve system reliability.
Features
? Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF) ? 100% Avalanche Tested ? RoHS Compliant ? 650 V @ TJ = 150°C ? Typ. RDS(on) = 65 mΩ ? Ultra Low Gate Charge (Typ. Qg = 165 nC)
Applications
? Switching Applications ? Automotive Electronics ? As Power Converters ? Accelerometer ? Amplifiers
FCH072N60F More Descriptions
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 52 A, 72 mΩ, TO-247
MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
MOSFET, N-CH, 600V, 52A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Power Field-Effect Transistor, 52A I(D), 600V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
The three parts on the right have similar specifications to FCH072N60F.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Peak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)View Compare
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FCH072N60FACTIVE (Last Updated: 5 days ago)12 WeeksThrough HoleThrough HoleTO-247-336.39gSILICON-55°C~150°C TJTubeFRFET®, SuperFET® II2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)8541.29.00.95FET General Purpose PowerMOSFET (Metal Oxide)1481W TcSingleENHANCEMENT MODE481W43 nsN-ChannelSWITCHING72m Ω @ 26A, 10V5V @ 250μA8660pF @ 100V52A Tc215nC @ 10V38ns10V±20V25 ns140 ns52ATO-247AB20V0.072Ohm600V156A1128 mJ20.82mm15.87mm4.82mmNoROHS3 CompliantLead Free-----------------------
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-----------------------------------------------------5V @ 5.4mA±20VMOSFET (Metal Oxide)TO-247 Long LeadsFRFET®, SuperFET® II77 mOhm @ 27A, 10V481W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole7109pF @ 100V164nC @ 10VN-Channel-10V650V54A (Tc)----
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ACTIVE (Last Updated: 5 days ago)12 WeeksThrough HoleThrough HoleTO-247-3-6.39g--55°C~150°C TJTubeSuperFET® II-e3yesActive1 (Unlimited)-EAR99Tin (Sn)8541.29.00.95-MOSFET (Metal Oxide)-481W TcSingle---N-Channel-70m Ω @ 26A, 10V3.5V @ 250μA4925pF @ 380V52A Tc166nC @ 10V-10V±20V--52A----------ROHS3 Compliant-------------------NOT SPECIFIEDnot_compliantNOT SPECIFIED600V
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-----------------------------------------------------5V @ 7.6mA±20VMOSFET (Metal Oxide)TO-247 Long LeadsFRFET®, SuperFET® II41 mOhm @ 38A, 10V595W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole13020pF @ 100V294nC @ 10VN-Channel-10V650V76A (Tc)----
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