Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FCH043N60
FCH043N60

Fairchild/ON Semiconductor FCH043N60

Part Number:
FCH043N60
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482447-FCH043N60
Description:
MOSFET N-CH 600V 75A TO247
ECAD Model:
Datasheet:
FCH043N60

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FCH043N60 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCH043N60.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.39g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperFET® II
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    592W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    46 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    43m Ω @ 38A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    12225pF @ 400V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    215nC @ 10V
  • Rise Time
    36ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    162 ns
  • Continuous Drain Current (ID)
    75A
  • JEDEC-95 Code
    TO-247AB
  • Gate to Source Voltage (Vgs)
    20V
  • Pulsed Drain Current-Max (IDM)
    225A
  • DS Breakdown Voltage-Min
    600V
  • Avalanche Energy Rating (Eas)
    2025 mJ
  • Height
    20.82mm
  • Length
    15.87mm
  • Width
    4.82mm
  • RoHS Status
    ROHS3 Compliant
Description
FCH043N60 Description
The SUPERFET II MOSFET is a new high voltage super-junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. This cutting-edge technology is designed to reduce conduction loss, offer greater switching performance, endure extremely high dv/dt rates, and handle more energy from avalanches. In order to reduce system size and increase efficiency, SUPERFET II MOSFET is appropriate for various AC/DC power conversion.

FCH043N60 Features
Typ. RDS(on) = 37 m
600 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 163 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF)
100% Avalanche Tested
These Devices are Pb?Free and are RoHS Compliant

FCH043N60 Applications
Telecom / Sever Power Supplies
Industrial Power Supplies
FCH043N60 More Descriptions
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 75 A, 43 mΩ, TO-247
Power Field-Effect Transistor, 75A I(D), 600V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
Product Comparison
The three parts on the right have similar specifications to FCH043N60.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    RoHS Status
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    HTS Code
    View Compare
  • FCH043N60
    FCH043N60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    6.39g
    SILICON
    -55°C~150°C TJ
    Tube
    SuperFET® II
    2014
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    1
    1
    592W Tc
    Single
    ENHANCEMENT MODE
    46 ns
    N-Channel
    SWITCHING
    43m Ω @ 38A, 10V
    3.5V @ 250μA
    12225pF @ 400V
    75A Tc
    215nC @ 10V
    36ns
    600V
    10V
    ±20V
    6 ns
    162 ns
    75A
    TO-247AB
    20V
    225A
    600V
    2025 mJ
    20.82mm
    15.87mm
    4.82mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FCH067N65S3_F155
    FCH067N65S3_F155
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4.5V @ 4.4mA
    ±30V
    MOSFET (Metal Oxide)
    TO-247 Long Leads
    SuperFET® III
    67 mOhm @ 22A, 10V
    312W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    3090pF @ 400V
    78nC @ 10V
    N-Channel
    Super Junction
    10V
    650V
    44A (Tc)
    -
    FCH043N60 vs FCH067N65S3_F155
  • FCH070N60E
    FCH070N60E
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    6.39g
    -
    -55°C~150°C TJ
    Tube
    SuperFET® II
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    -
    481W Tc
    Single
    -
    -
    N-Channel
    -
    70m Ω @ 26A, 10V
    3.5V @ 250μA
    4925pF @ 380V
    52A Tc
    166nC @ 10V
    -
    600V
    10V
    ±20V
    -
    -
    52A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    8541.29.00.95
    FCH043N60 vs FCH070N60E
  • FCH077N65F_F085
    FCH077N65F_F085
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    5V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    TO-247
    Automotive, AEC-Q101, SuperFET® II
    77 mOhm @ 27A, 10V
    481W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    7162pF @ 25V
    164nC @ 10V
    N-Channel
    -
    10V
    650V
    54A (Tc)
    -
    FCH043N60 vs FCH077N65F_F085
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FCH043N60
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.