Fairchild/ON Semiconductor FCD5N60TM

Name: FCD5N60TM
Brand: Fairchild/ON Semiconductor
SKU: 2478859-FCD5N60TM
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FCD5N60TM

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478859-FCD5N60TM

Description:: MOSFET N-CH 600V 4.6A DPAK

ECAD Model:

Datasheet:: FCD5N60TM

Specifications

Fairchild/ON Semiconductor FCD5N60TM technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCD5N60TM.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperFET™
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
950MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
4.6A
Base Part Number
FCD5N60
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
54W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
54W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
950m Ω @ 2.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.6A Tc
Gate Charge (Qg) (Max) @ Vgs
16nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
47 ns
Continuous Drain Current (ID)
4.6A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FCD5N60TM Description
Super FETMOSFET is the first generation of high voltage superjunction (SJ) MOSFET in Xiantong semiconductor family. It uses charge balance technology to obtain excellent low on-resistance and low gate charge performance. The technology aims to minimize the turn-on loss and provide excellent switching performance. Therefore, SuperFET MOSFET is very suitable for switching power applications such as PFC, server / telecom power supply, flat screen TV power supply, ATX power supply and industrial power supply. FCD5N60TM Features
650V@T=150°C·Typ.RDs(on)=810 mΩ .Ultra Low Gate Charge(Typ.Q=16nC) ·Low Effective Output Capacitance(Typ.Coss(e.)=32pF) 100% Avalanche Tested RoHS Compliant FCD5N60TM Application
LCD/LED TV and Monitor Lighting Solar Inverter AC-DC Power Supply

FCD5N60TM More Descriptions

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK
N-Channel 600 V 0.95 Ohm Surface Mount SuperFET Mosfet - TO-252-3
Trans MOSFET N-CH 600V 4.6A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 600V 4.6A DPAK
MOSFET, N, 650V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:4.6A; Package / Case:DPAK; Power Dissipation Pd:54W; Power Dissipation Pd:54W; Pulse Current Idm:13.8A; Termination Type:SMD; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Certification