Diodes Incorporated DMTH6004SK3-13
- Part Number:
- DMTH6004SK3-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2483811-DMTH6004SK3-13
- Description:
- MOSFET N-CHA 60V 100A DPAK
- Datasheet:
- DMTH6004SK3-13
Diodes Incorporated DMTH6004SK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMTH6004SK3-13.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max3.9W Ta 180W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.8m Ω @ 90A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4556pF @ 30V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs95.4nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)100A
- RoHS StatusROHS3 Compliant
DMTH6004SK3-13 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4556pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
DMTH6004SK3-13 Features
a continuous drain current (ID) of 100A
a 60V drain to source voltage (Vdss)
DMTH6004SK3-13 Applications
There are a lot of Diodes Incorporated
DMTH6004SK3-13 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4556pF @ 30V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
DMTH6004SK3-13 Features
a continuous drain current (ID) of 100A
a 60V drain to source voltage (Vdss)
DMTH6004SK3-13 Applications
There are a lot of Diodes Incorporated
DMTH6004SK3-13 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMTH6004SK3-13 More Descriptions
Mosfet, N-Ch, 60V, 100A, To-252 Rohs Compliant: Yes |Diodes Inc. DMTH6004SK3-13
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2 Tab) DPAK T/R
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
MOSFET, N-CH, 60V, 100A, TO-252;
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2 Tab) DPAK T/R
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
MOSFET, N-CH, 60V, 100A, TO-252;
The three parts on the right have similar specifications to DMTH6004SK3-13.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusNumber of PinsTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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DMTH6004SK3-1323 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q1012015e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED3.9W Ta 180W TcN-Channel3.8m Ω @ 90A, 10V4V @ 250μA4556pF @ 30V100A Tc95.4nC @ 10V60V10V±20V100AROHS3 Compliant-----------------
-
22 WeeksSurface MountSurface Mount8-PowerTDFN-55°C~175°C TJTape & Reel (TR)-2015e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED3.2W Ta 150W TcN-Channel5.5m Ω @ 50A, 10V3V @ 250μA2962pF @ 30V20.6A Ta 100A Tc47.1nC @ 10V60V4.5V 10V±20V100AROHS3 Compliant8---------------
-
22 WeeksSurface MountSurface Mount8-PowerTDFN-55°C~175°C TJTape & Reel (TR)-2015e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED2.6W Ta 136W TcN-Channel8m Ω @ 20A, 10V3V @ 250μA2090pF @ 30V13.5A Ta 100A Tc41.3nC @ 10V60V4.5V 10V±20V100AROHS3 Compliant8---------------
-
23 WeeksSurface MountSurface MountTO-252-5, DPak (4 Leads Tab), TO-252AD-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101-e3-Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliantNOT SPECIFIED3.9W Ta 180W TcN-Channel3.8m Ω @ 90A, 10V4V @ 250μA4556pF @ 30V100A Tc95.4nC @ 10V60V10V±20V100AROHS3 Compliant-SILICON2HIGH RELIABILITYSINGLEGULL WINGR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING0.0038Ohm150A60V200 mJ
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