Diodes Incorporated DMP4051LK3-13
- Part Number:
- DMP4051LK3-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478039-DMP4051LK3-13
- Description:
- MOSFET P-CH 40V 7.2A DPAK
- Datasheet:
- DMP4051LK3-13
Diodes Incorporated DMP4051LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP4051LK3-13.
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Weight3.949996g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- Published2012
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance51mOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.14W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation4.18W
- Case ConnectionDRAIN
- Turn On Delay Time2.3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs51m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds674pF @ 20V
- Current - Continuous Drain (Id) @ 25°C7.2A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time14.1ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)14.3 ns
- Turn-Off Delay Time25.1 ns
- Continuous Drain Current (ID)-7.2A
- Threshold Voltage-3V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-40V
- Pulsed Drain Current-Max (IDM)28.9A
- Max Junction Temperature (Tj)150°C
- Height2.52mm
- Length6.7mm
- Width6.2mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP4051LK3-13 Overview
A device's maximum input capacitance is 674pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -7.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-40V, and this device has a drain-to-source breakdown voltage of -40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25.1 ns.Its maximum pulsed drain current is 28.9A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -3V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMP4051LK3-13 Features
a continuous drain current (ID) of -7.2A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 25.1 ns
based on its rated peak drain current 28.9A.
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
DMP4051LK3-13 Applications
There are a lot of Diodes Incorporated
DMP4051LK3-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 674pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -7.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-40V, and this device has a drain-to-source breakdown voltage of -40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25.1 ns.Its maximum pulsed drain current is 28.9A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -3V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMP4051LK3-13 Features
a continuous drain current (ID) of -7.2A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 25.1 ns
based on its rated peak drain current 28.9A.
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
DMP4051LK3-13 Applications
There are a lot of Diodes Incorporated
DMP4051LK3-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMP4051LK3-13 More Descriptions
Dual Positive-Edge-Triggered D-Type Flip-Flops With Preset And Clear 14-PDIP 0 to 70
MOSFET P-CH 40V 7.2A DPAK / Trans MOSFET P-CH 40V 7.2A 3-Pin(2 Tab) DPAK T/R
P Channel 40 V 51 mO 8.9 W 14 nC Surface Mount Power MosFet - TO-252 (DPAK)
MOSFET, P-CH, -40V, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Source Voltage Vds:-40V; On Resistance
Power Field-Effect Transistor, 7.2A I(D), 40V, 0.051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, P-CH, -40V, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.2A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.041ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 4.18W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019)
MOSFET P-CH 40V 7.2A DPAK / Trans MOSFET P-CH 40V 7.2A 3-Pin(2 Tab) DPAK T/R
P Channel 40 V 51 mO 8.9 W 14 nC Surface Mount Power MosFet - TO-252 (DPAK)
MOSFET, P-CH, -40V, TO-252-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Source Voltage Vds:-40V; On Resistance
Power Field-Effect Transistor, 7.2A I(D), 40V, 0.051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, P-CH, -40V, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.2A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.041ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 4.18W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019)
The three parts on the right have similar specifications to DMP4051LK3-13.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishSeriesAdditional FeatureTerminal PositionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxView Compare
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DMP4051LK3-1317 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJDigi-Reel®2012e3noActive1 (Unlimited)2EAR9951mOhmOther TransistorsMOSFET (Metal Oxide)GULL WING260404R-PSSO-G2112.14W TaSingleENHANCEMENT MODE4.18WDRAIN2.3 nsP-ChannelSWITCHING51m Ω @ 12A, 10V3V @ 250μA674pF @ 20V7.2A Ta14nC @ 10V14.1ns40V4.5V 10V±20V14.3 ns25.1 ns-7.2A-3VTO-252AA20V-40V28.9A150°C2.52mm6.7mm6.2mmNo SVHCNoROHS3 CompliantLead Free-------
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16 Weeks-Surface MountSurface Mount8-PowerVDFN872.007789mg--55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)-EAR99-Other TransistorsMOSFET (Metal Oxide)-------810mW TaSingle---6.9 nsP-Channel-25m Ω @ 3A, 10V1.8V @ 250μA1643pF @ 20V4.65A Ta14nC @ 4.5V14.7ns40V4.5V 10V±20V30.9 ns53.7 ns7.2A--20V---800μm3.35mm3.35mmNo SVHCNoROHS3 Compliant-Matte Tin (Sn)-----
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15 Weeks--Surface Mount8-PowerVDFN----55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED----810mW Ta-----P-Channel-25m Ω @ 3A, 10V1.8V @ 250μA1643pF @ 20V7.2A Ta33.7nC @ 10V-40V4.5V 10V±20V--------------ROHS3 Compliant-Matte Tin (Sn)Automotive, AEC-Q101----
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17 Weeks-Surface MountSurface Mount6-UDFN Exposed Pad6-SILICON-55°C~150°C TJTape & Reel (TR)1999e4yesActive1 (Unlimited)3EAR99-Other TransistorsMOSFET (Metal Oxide)NO LEAD26040-S-PDSO-N311700mW TaSingleENHANCEMENT MODE-DRAIN18.4 nsP-ChannelSWITCHING33m Ω @ 4.4A, 10V2.2V @ 250μA1382pF @ 20V3.3A Ta23.2nC @ 10V28.2ns40V4.5V 10V±20V28.6 ns38.8 ns6A-2.2V-20V-40V--580μm2.05mm2.05mmNo SVHC-ROHS3 CompliantLead FreeNickel/Palladium/Gold (Ni/Pd/Au)-HIGH RELIABILITYDUAL3.3A0.033Ohm
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