Diodes Incorporated DMP4025SFGQ-13

Name: DMP4025SFGQ-13
Brand: Diodes Incorporated
SKU: 2485213-DMP4025SFGQ-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMP4025SFGQ-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2485213-DMP4025SFGQ-13

Description:: MOSFET P-CH

ECAD Model:

Datasheet:: DMP4025SFGQ-13

Specifications

Diodes Incorporated DMP4025SFGQ-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP4025SFGQ-13.

Factory Lead Time
15 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
810mW Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
25m Ω @ 3A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1643pF @ 20V
Current - Continuous Drain (Id) @ 25°C
7.2A Ta
Gate Charge (Qg) (Max) @ Vgs
33.7nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

DMP4025SFGQ-13 Overview
A device's maximum input capacitance is 1643pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

DMP4025SFGQ-13 Features
a 40V drain to source voltage (Vdss)

DMP4025SFGQ-13 Applications
There are a lot of Diodes Incorporated
DMP4025SFGQ-13 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

DMP4025SFGQ-13 More Descriptions

Mosfet, P-Ch, 40V, 7.2A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMP4025SFGQ-13
DMP4025 Series 40 V 7.2 A P-Channel Enhancement Mode Mosfet - PowerDI3333-8
Trans MOSFET P-CH 40V 7.2A Automotive AEC-Q101 8-Pin PowerDI EP T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 40V VDS, 20±V VGSDiodes Inc SCT
Power Field-Effect Transistor, 4.65A I(D), 40V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 31V~40V POWERDI3333-8 T&R 3K
MOSFET, P-CH, 40V, 7.2A, POWERDI 3333;
MOSFET P-CH 40V 7.2A PWRDI3333-8
DMP4025SFGQ-13 Diodes Incorporated Transistors MOSFETs P-CH 40V 7.2A Automotive 8-Pin PowerDI EP T/R - Arrow.com
Power Field-Effect Transistors

Product Comparison

The three parts on the right have similar specifications to DMP4025SFGQ-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Mount

Transistor Element Material

Number of Terminations

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Number of Pins

Weight

Additional Feature

Subcategory

Pin Count

Number of Channels

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

REACH SVHC

Radiation Hardening

Power Dissipation

View Compare
DMP4025SFGQ-13

Diodes Incorporated

15 Weeks

Surface Mount

8-PowerVDFN

-55°C~150°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2013

e3

yes

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

810mW Ta

P-Channel

25m Ω @ 3A, 10V

1.8V @ 250μA

1643pF @ 20V

7.2A Ta

33.7nC @ 10V

40V

4.5V 10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMP4047SK3-13

Diodes Incorporated

17 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~150°C TJ

Tape & Reel (TR)

-

2015

e3

-

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

1.6W Ta

P-Channel

45m Ω @ 4.4A, 10V

3V @ 250μA

1328pF @ 20V

20A Tc

23.2nC @ 10V

40V

4.5V 10V

±20V

ROHS3 Compliant

Surface Mount

SILICON

2

SINGLE

GULL WING

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

20A

0.045Ohm

40A

40V

16 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMP4025SFGQ-13 vs DMP4047SK3-13
DMP4015SSS-13

Diodes Incorporated

15 Weeks

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-55°C~150°C TJ

Tape & Reel (TR)

-

2012

e3

yes

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

260

40

1.45W Ta

P-Channel

11m Ω @ 9.8A, 10V

2.5V @ 250μA

4234pF @ 20V

9.1A Ta

47.5nC @ 5V

40V

4.5V 10V

±25V

ROHS3 Compliant

Surface Mount

SILICON

8

DUAL

GULL WING

-

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

-

SWITCHING

9.1A

-

-

-

-

8

73.992255mg

HIGH RELIABILITY

Other Transistors

8

1

13.2 ns

10ns

137.9 ns

302.7 ns

25V

-40V

No SVHC

No

-

DMP4025SFGQ-13 vs DMP4015SSS-13
DMP4025SFG-13

Diodes Incorporated

16 Weeks

Surface Mount

8-PowerVDFN

-55°C~150°C TJ

Tape & Reel (TR)

-

2013

e3

-

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

-

-

810mW Ta

P-Channel

25m Ω @ 3A, 10V

1.8V @ 250μA

1643pF @ 20V

4.65A Ta

33.7nC @ 10V

40V

4.5V 10V

±20V

ROHS3 Compliant

Surface Mount

-

-

-

-

-

-

Single

-

-

-

7.2A

-

-

-

-

8

72.007789mg

-

Other Transistors

-

1

6.9 ns

14.7ns

30.9 ns

53.7 ns

20V

-40V

No SVHC

No

1.95W

DMP4025SFGQ-13 vs DMP4025SFG-13