Diodes Incorporated DMP3098L-7
- Part Number:
- DMP3098L-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848380-DMP3098L-7
- Description:
- MOSFET P-CH 30V 3.8A SOT23-3
- Datasheet:
- DMP3098L-7
Diodes Incorporated DMP3098L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3098L-7.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance70mOhm
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Number of Channels1
- Voltage30V
- Power Dissipation-Max1.08W Ta
- Element ConfigurationSingle
- Current38A
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.08W
- Turn On Delay Time6 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs70m Ω @ 3.8A, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds336pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.8A Ta
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time17.6 ns
- Continuous Drain Current (ID)3.8A
- Threshold Voltage-1.8V
- Gate to Source Voltage (Vgs)20V
- Turn Off Time-Max (toff)54.2ns
- Turn On Time-Max (ton)22ns
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP3098L-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 336pF @ 25V.This device conducts a continuous drain current (ID) of 3.8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 17.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.8V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMP3098L-7 Features
a continuous drain current (ID) of 3.8A
the turn-off delay time is 17.6 ns
a threshold voltage of -1.8V
DMP3098L-7 Applications
There are a lot of Diodes Incorporated
DMP3098L-7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 336pF @ 25V.This device conducts a continuous drain current (ID) of 3.8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 17.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.8V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMP3098L-7 Features
a continuous drain current (ID) of 3.8A
the turn-off delay time is 17.6 ns
a threshold voltage of -1.8V
DMP3098L-7 Applications
There are a lot of Diodes Incorporated
DMP3098L-7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMP3098L-7 More Descriptions
MOSFET P-CH 30V 3.8A SOT23-3 / Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R
DMP3098L Series 30 V 70 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET P-Channel 30V 3.8A SOT23 | Diodes Inc DMP3098L-7
MOSFET,P CH,30V,3.8A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.8A; Source Voltage Vds:-30V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.08 W
MOSFET,P CH,30V,3.8A,SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.056ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 1.08W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -3.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
DMP3098L Series 30 V 70 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET P-Channel 30V 3.8A SOT23 | Diodes Inc DMP3098L-7
MOSFET,P CH,30V,3.8A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.8A; Source Voltage Vds:-30V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.08 W
MOSFET,P CH,30V,3.8A,SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.056ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 1.08W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -3.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
The three parts on the right have similar specifications to DMP3098L-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Turn Off Time-Max (toff)Turn On Time-Max (ton)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)ConfigurationGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)JESD-30 CodeCase ConnectionDrain to Source Breakdown VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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DMP3098L-716 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3EAR9970mOhmHIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WING31130V1.08W TaSingle38AENHANCEMENT MODE1.08W6 nsP-ChannelSWITCHING70m Ω @ 3.8A, 10V2.1V @ 250μA336pF @ 25V3.8A Ta5ns4.5V 10V±20V5 ns17.6 ns3.8A-1.8V20V54.2ns22ns1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----------------
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16 Weeks-Surface MountSC-70, SOT-323-36.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)3EAR99-HIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WING-11-300mW Ta--ENHANCEMENT MODE-9.86 nsP-ChannelSWITCHING2.4 Ω @ 500mA, 10V2.4V @ 250μA51.16pF @ 15V250mA Ta11.5ns4.5V 10V±20V21.9 ns31.8 ns250mA-20V--1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead FreeSurface MountMatte Tin (Sn)Other Transistors26030SINGLE WITH BUILT-IN DIODE1.2nC @ 10V30V0.25A------
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18 Weeks-Surface Mount8-PowerVDFN-872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2016e3yesObsolete1 (Unlimited)5EAR99-HIGH RELIABILITYMOSFET (Metal Oxide)DUAL-812-900mW Ta--ENHANCEMENT MODE-10.5 nsP-ChannelSWITCHING17m Ω @ 10A, 10V2.1V @ 250μA2230pF @ 15V8.6A Ta8.5ns4.5V 10V±20V40 ns90 ns8.6A-20V-----No SVHCNoROHS3 Compliant-Surface MountMatte Tin (Sn)Other Transistors26040SINGLE WITH BUILT-IN DIODE47nC @ 10V-7.1AS-PDSO-N5DRAIN30V---
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23 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3---SILICON-55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)3EAR99--MOSFET (Metal Oxide)DUALGULL WING-1--1.38W Ta--ENHANCEMENT MODE--P-ChannelSWITCHING50m Ω @ 6A, 10V2.1V @ 250μA642pF @ 25V4.3A Ta-4.5V 10V±25V--4.3A---------ROHS3 Compliant-Surface MountMatte Tin (Sn)-NOT SPECIFIEDNOT SPECIFIEDSINGLE WITH BUILT-IN DIODE11.8nC @ 10V30V-R-PDSO-G3--0.05Ohm20A30V
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