Diodes Incorporated DMP3056LDM-7

Name: DMP3056LDM-7
Brand: Diodes Incorporated
SKU: 2478016-DMP3056LDM-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMP3056LDM-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2478016-DMP3056LDM-7

Description:: MOSFET P-CH 30V 4.3A SOT-26

ECAD Model:

Datasheet:: DMP3056LDM-7

Specifications

Diodes Incorporated DMP3056LDM-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3056LDM-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
6
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.25W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Turn On Delay Time
10.2 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
45m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
948pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.3A Ta
Gate Charge (Qg) (Max) @ Vgs
21.1nC @ 10V
Rise Time
5.3ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
5.3 ns
Turn-Off Delay Time
50.1 ns
Continuous Drain Current (ID)
4.3A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5A
Drain-source On Resistance-Max
0.045Ohm
Drain to Source Breakdown Voltage
-30V
Height
1.1mm
Length
3mm
Width
1.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMP3056LDM-7 Overview
The maximum input capacitance of this device is 948pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.3A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.As shown in the table below, the drain current of this device is 5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 50.1 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10.2 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

DMP3056LDM-7 Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 50.1 ns
a 30V drain to source voltage (Vdss)

DMP3056LDM-7 Applications
There are a lot of Diodes Incorporated
DMP3056LDM-7 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

DMP3056LDM-7 More Descriptions

Mosfet Bvdss: 25V~30V Sot26 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMP3056LDM-7
Trans MOSFET P-CH 30V 4.3A 6-Pin SOT-26 T/R / MOSFET P-CH 30V 4.3A SOT-26
P Channel 30 V 65 mO 1.5 W 10.1 nC Surface Mount Power MosFet - SOT-26
MOSFET, P-CH, -30V, -4.3A, SOT26; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.1

Product Comparison

The three parts on the right have similar specifications to DMP3056LDM-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Weight

JESD-30 Code

Configuration

Case Connection

Reach Compliance Code

View Compare
DMP3056LDM-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SOT-23-6

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

6

1

1

1.25W Ta

Single

ENHANCEMENT MODE

1.5W

10.2 ns

P-Channel

SWITCHING

45m Ω @ 5A, 10V

2.1V @ 250μA

948pF @ 25V

4.3A Ta

21.1nC @ 10V

5.3ns

30V

4.5V 10V

±20V

5.3 ns

50.1 ns

4.3A

20V

5A

0.045Ohm

-30V

1.1mm

3mm

1.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
DMP3008SFG-13

Diodes Incorporated

18 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

DUAL

-

260

40

8

1

2

900mW Ta

-

ENHANCEMENT MODE

-

10.5 ns

P-Channel

SWITCHING

17m Ω @ 10A, 10V

2.1V @ 250μA

2230pF @ 15V

8.6A Ta

47nC @ 10V

8.5ns

-

4.5V 10V

±20V

40 ns

90 ns

8.6A

20V

7.1A

-

30V

-

-

-

No SVHC

No

ROHS3 Compliant

-

72.007789mg

S-PDSO-N5

SINGLE WITH BUILT-IN DIODE

DRAIN

-

DMP3056LDM-7 vs DMP3008SFG-13
DMP3010LK3Q-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

-

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

1

1

1.7W Ta

-

ENHANCEMENT MODE

-

11.4 ns

P-Channel

SWITCHING

8m Ω @ 10A, 10V

2.1V @ 250μA

6234pF @ 15V

17A Ta

59.2nC @ 4.5V

9.4ns

30V

4.5V 10V

±20V

99.3 ns

260.7 ns

17A

20V

-

-

-30V

-

-

-

-

-

ROHS3 Compliant

-

-

R-PSSO-G2

SINGLE WITH BUILT-IN DIODE

DRAIN

not_compliant

DMP3056LDM-7 vs DMP3010LK3Q-13
DMP32D4S-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

Other Transistors

MOSFET (Metal Oxide)

-

-

260

30

-

-

-

370mW Ta

Single

-

-

9.86 ns

P-Channel

-

2.4 Ω @ 300mA, 10V

2.4V @ 250μA

51.16pF @ 15V

300mA Ta

1.2nC @ 10V

11.5ns

30V

4.5V 10V

±20V

21.9 ns

31.8 ns

300mA

20V

-

-

-

1mm

3mm

1.4mm

-

No

ROHS3 Compliant

-

-

-

-

-

-

DMP3056LDM-7 vs DMP32D4S-7