Diodes Incorporated DMP3037LSS-13

Name: DMP3037LSS-13
Brand: Diodes Incorporated
SKU: 2479222-DMP3037LSS-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMP3037LSS-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2479222-DMP3037LSS-13

Description:: MOSFET P-CH 30V 5.8A 8-SO

ECAD Model:

Datasheet:: DMP3037LSS-13

Specifications

Diodes Incorporated DMP3037LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3037LSS-13.

Factory Lead Time
23 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Capacitance
931pF
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.2W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
3.2 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
32m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
931pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.8A Ta
Gate Charge (Qg) (Max) @ Vgs
19.3nC @ 10V
Rise Time
11.5ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
30.8 ns
Turn-Off Delay Time
55.8 ns
Continuous Drain Current (ID)
5.8A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.032Ohm
Drain to Source Breakdown Voltage
-30V
RoHS Status
ROHS3 Compliant

Description

DMP3037LSS-13 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 931pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-30V. And this device has -30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 55.8 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 3.2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

DMP3037LSS-13 Features
a continuous drain current (ID) of 5.8A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 55.8 ns
a 30V drain to source voltage (Vdss)

DMP3037LSS-13 Applications
There are a lot of Diodes Incorporated
DMP3037LSS-13 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

DMP3037LSS-13 More Descriptions

Trans MOSFET P-CH -30V -5.8A 8-Pin SO T/R
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet Bvdss: 25V~30V So-8 T&r 2.5K
MOSFET, AEC-Q101, P-CH, -5.8A, -30V, SOIC; Transistor Polarity: P Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 5.8A; On Resistance Rds(on): 0.019ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V

Product Comparison

The three parts on the right have similar specifications to DMP3037LSS-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Capacitance

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

RoHS Status

Pbfree Code

Subcategory

Pin Count

JESD-30 Code

Configuration

Case Connection

Drain Current-Max (Abs) (ID)

REACH SVHC

Radiation Hardening

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Height

Length

Width

View Compare
DMP3037LSS-13

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

73.992255mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

Active

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

931pF

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

1

1

1.2W Ta

Single

ENHANCEMENT MODE

3.2 ns

P-Channel

SWITCHING

32m Ω @ 7A, 10V

2.4V @ 250μA

931pF @ 15V

5.8A Ta

19.3nC @ 10V

11.5ns

30V

4.5V 10V

±20V

30.8 ns

55.8 ns

5.8A

20V

0.032Ohm

-30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMP3008SFG-13

Diodes Incorporated

18 Weeks

Surface Mount

Surface Mount

8-PowerVDFN

8

72.007789mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

Obsolete

1 (Unlimited)

5

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

-

MOSFET (Metal Oxide)

DUAL

-

260

40

1

2

900mW Ta

-

ENHANCEMENT MODE

10.5 ns

P-Channel

SWITCHING

17m Ω @ 10A, 10V

2.1V @ 250μA

2230pF @ 15V

8.6A Ta

47nC @ 10V

8.5ns

-

4.5V 10V

±20V

40 ns

90 ns

8.6A

20V

-

30V

ROHS3 Compliant

yes

Other Transistors

8

S-PDSO-N5

SINGLE WITH BUILT-IN DIODE

DRAIN

7.1A

No SVHC

No

-

-

-

-

-

DMP3037LSS-13 vs DMP3008SFG-13
DMP3056L-13

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

1

-

1.38W Ta

-

ENHANCEMENT MODE

-

P-Channel

SWITCHING

50m Ω @ 6A, 10V

2.1V @ 250μA

642pF @ 25V

4.3A Ta

11.8nC @ 10V

-

30V

4.5V 10V

±25V

-

-

4.3A

-

0.05Ohm

-

ROHS3 Compliant

-

-

-

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

-

-

-

-

20A

30V

-

-

-

DMP3037LSS-13 vs DMP3056L-13
DMP32D4S-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

260

30

-

-

370mW Ta

Single

-

9.86 ns

P-Channel

-

2.4 Ω @ 300mA, 10V

2.4V @ 250μA

51.16pF @ 15V

300mA Ta

1.2nC @ 10V

11.5ns

30V

4.5V 10V

±20V

21.9 ns

31.8 ns

300mA

20V

-

-

ROHS3 Compliant

-

Other Transistors

-

-

-

-

-

-

No

-

-

1mm

3mm

1.4mm

DMP3037LSS-13 vs DMP32D4S-7