DMP3017SFG-7

Diodes Incorporated DMP3017SFG-7

Part Number:
DMP3017SFG-7
Manufacturer:
Diodes Incorporated
Ventron No:
2484620-DMP3017SFG-7
Description:
MOSFET P-CH 30V POWERDI3333-8
ECAD Model:
Datasheet:
DMP3017SFG

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Specifications
Diodes Incorporated DMP3017SFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3017SFG-7.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Weight
    72.007789mg
  • Manufacturer Package Identifier
    POWERDI3333-8
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    940mW Ta
  • Element Configuration
    Single
  • Power Dissipation
    940mW
  • Turn On Delay Time
    7.5 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    10m Ω @ 11.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2246pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    41nC @ 10V
  • Rise Time
    15.4ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    36.8 ns
  • Turn-Off Delay Time
    45.6 ns
  • Continuous Drain Current (ID)
    -11.5A
  • Threshold Voltage
    -3V
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    -30V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    850μm
  • Length
    3.35mm
  • Width
    3.35mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMP3017SFG-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2246pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -11.5A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [45.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -3V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

DMP3017SFG-7 Features
a continuous drain current (ID) of -11.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45.6 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)


DMP3017SFG-7 Applications
There are a lot of Diodes Incorporated
DMP3017SFG-7 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP3017SFG-7 More Descriptions
Trans MOSFET P-CH 30V 11.5A 8-Pin PowerDI EP T/R / MOSFET P-CH 30V POWERDI3333-8
MOSFET P-Ch 30V 11.5A POWERDI3333-8 | Diodes Inc DMP3017SFG-7
P-Channel 30 V 11.5A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8
Small Signal Field-Effect Transistor
MOSFET P-CH 30V 11.5A PWRDI3333
Product Comparison
The three parts on the right have similar specifications to DMP3017SFG-7.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Factory Lead Time
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    Drain Current-Max (Abs) (ID)
    REACH SVHC
    Radiation Hardening
    Pbfree Code
    Pin Count
    JESD-30 Code
    Case Connection
    Reach Compliance Code
    View Compare
  • DMP3017SFG-7
    DMP3017SFG-7
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    POWERDI3333-8
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Obsolete
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    1
    940mW Ta
    Single
    940mW
    7.5 ns
    P-Channel
    10m Ω @ 11.5A, 10V
    3V @ 250μA
    2246pF @ 15V
    11.5A Ta
    41nC @ 10V
    15.4ns
    30V
    4.5V 10V
    ±25V
    36.8 ns
    45.6 ns
    -11.5A
    -3V
    25V
    -30V
    150°C
    850μm
    3.35mm
    3.35mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP32D4SW-7
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    6.010099mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    1
    300mW Ta
    -
    -
    9.86 ns
    P-Channel
    2.4 Ω @ 500mA, 10V
    2.4V @ 250μA
    51.16pF @ 15V
    250mA Ta
    1.2nC @ 10V
    11.5ns
    30V
    4.5V 10V
    ±20V
    21.9 ns
    31.8 ns
    250mA
    -
    20V
    -
    -
    1mm
    2.2mm
    1.35mm
    ROHS3 Compliant
    Lead Free
    16 Weeks
    SILICON
    3
    HIGH RELIABILITY
    Other Transistors
    DUAL
    GULL WING
    260
    30
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    0.25A
    No SVHC
    No
    -
    -
    -
    -
    -
  • DMP3008SFG-13
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    Obsolete
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    2
    900mW Ta
    -
    -
    10.5 ns
    P-Channel
    17m Ω @ 10A, 10V
    2.1V @ 250μA
    2230pF @ 15V
    8.6A Ta
    47nC @ 10V
    8.5ns
    -
    4.5V 10V
    ±20V
    40 ns
    90 ns
    8.6A
    -
    20V
    30V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    18 Weeks
    SILICON
    5
    HIGH RELIABILITY
    Other Transistors
    DUAL
    -
    260
    40
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    7.1A
    No SVHC
    No
    yes
    8
    S-PDSO-N5
    DRAIN
    -
  • DMP3010LK3Q-13
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    1
    1.7W Ta
    -
    -
    11.4 ns
    P-Channel
    8m Ω @ 10A, 10V
    2.1V @ 250μA
    6234pF @ 15V
    17A Ta
    59.2nC @ 4.5V
    9.4ns
    30V
    4.5V 10V
    ±20V
    99.3 ns
    260.7 ns
    17A
    -
    20V
    -30V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    15 Weeks
    SILICON
    2
    HIGH RELIABILITY
    Other Transistors
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    -
    -
    -
    R-PSSO-G2
    DRAIN
    not_compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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