Diodes Incorporated DMP3017SFG-7
- Part Number:
- DMP3017SFG-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2484620-DMP3017SFG-7
- Description:
- MOSFET P-CH 30V POWERDI3333-8
- Datasheet:
- DMP3017SFG
Diodes Incorporated DMP3017SFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3017SFG-7.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Weight72.007789mg
- Manufacturer Package IdentifierPOWERDI3333-8
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max940mW Ta
- Element ConfigurationSingle
- Power Dissipation940mW
- Turn On Delay Time7.5 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs10m Ω @ 11.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2246pF @ 15V
- Current - Continuous Drain (Id) @ 25°C11.5A Ta
- Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
- Rise Time15.4ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±25V
- Fall Time (Typ)36.8 ns
- Turn-Off Delay Time45.6 ns
- Continuous Drain Current (ID)-11.5A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage-30V
- Max Junction Temperature (Tj)150°C
- Height850μm
- Length3.35mm
- Width3.35mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP3017SFG-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2246pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -11.5A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [45.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -3V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP3017SFG-7 Features
a continuous drain current (ID) of -11.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45.6 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
DMP3017SFG-7 Applications
There are a lot of Diodes Incorporated
DMP3017SFG-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2246pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -11.5A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [45.6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -3V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP3017SFG-7 Features
a continuous drain current (ID) of -11.5A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45.6 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
DMP3017SFG-7 Applications
There are a lot of Diodes Incorporated
DMP3017SFG-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP3017SFG-7 More Descriptions
Trans MOSFET P-CH 30V 11.5A 8-Pin PowerDI EP T/R / MOSFET P-CH 30V POWERDI3333-8
MOSFET P-Ch 30V 11.5A POWERDI3333-8 | Diodes Inc DMP3017SFG-7
P-Channel 30 V 11.5A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8
Small Signal Field-Effect Transistor
MOSFET P-CH 30V 11.5A PWRDI3333
MOSFET P-Ch 30V 11.5A POWERDI3333-8 | Diodes Inc DMP3017SFG-7
P-Channel 30 V 11.5A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8
Small Signal Field-Effect Transistor
MOSFET P-CH 30V 11.5A PWRDI3333
The three parts on the right have similar specifications to DMP3017SFG-7.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthRoHS StatusLead FreeFactory Lead TimeTransistor Element MaterialNumber of TerminationsAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)REACH SVHCRadiation HardeningPbfree CodePin CountJESD-30 CodeCase ConnectionReach Compliance CodeView Compare
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DMP3017SFG-7Surface MountSurface Mount8-PowerVDFN872.007789mgPOWERDI3333-8-55°C~150°C TJTape & Reel (TR)2013e3Obsolete1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)1940mW TaSingle940mW7.5 nsP-Channel10m Ω @ 11.5A, 10V3V @ 250μA2246pF @ 15V11.5A Ta41nC @ 10V15.4ns30V4.5V 10V±25V36.8 ns45.6 ns-11.5A-3V25V-30V150°C850μm3.35mm3.35mmROHS3 CompliantLead Free----------------------
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Surface MountSurface MountSC-70, SOT-32336.010099mg--55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)1300mW Ta--9.86 nsP-Channel2.4 Ω @ 500mA, 10V2.4V @ 250μA51.16pF @ 15V250mA Ta1.2nC @ 10V11.5ns30V4.5V 10V±20V21.9 ns31.8 ns250mA-20V--1mm2.2mm1.35mmROHS3 CompliantLead Free16 WeeksSILICON3HIGH RELIABILITYOther TransistorsDUALGULL WING260301SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING0.25ANo SVHCNo-----
-
Surface MountSurface Mount8-PowerVDFN872.007789mg--55°C~150°C TJTape & Reel (TR)2016e3Obsolete1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)2900mW Ta--10.5 nsP-Channel17m Ω @ 10A, 10V2.1V @ 250μA2230pF @ 15V8.6A Ta47nC @ 10V8.5ns-4.5V 10V±20V40 ns90 ns8.6A-20V30V----ROHS3 Compliant-18 WeeksSILICON5HIGH RELIABILITYOther TransistorsDUAL-260401SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING7.1ANo SVHCNoyes8S-PDSO-N5DRAIN-
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)11.7W Ta--11.4 nsP-Channel8m Ω @ 10A, 10V2.1V @ 250μA6234pF @ 15V17A Ta59.2nC @ 4.5V9.4ns30V4.5V 10V±20V99.3 ns260.7 ns17A-20V-30V----ROHS3 Compliant-15 WeeksSILICON2HIGH RELIABILITYOther TransistorsSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING-----R-PSSO-G2DRAINnot_compliant
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