DMP3015LSSQ-13

Diodes Incorporated DMP3015LSSQ-13

Part Number:
DMP3015LSSQ-13
Manufacturer:
Diodes Incorporated
Ventron No:
2484722-DMP3015LSSQ-13
Description:
MOSFET P-CH 30V 13A 8-SO
ECAD Model:
Datasheet:
DMP3015LSSQ-13

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Specifications
Diodes Incorporated DMP3015LSSQ-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3015LSSQ-13.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Supplier Device Package
    8-SO
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.5W Ta
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    11mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2748pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    13A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    60.4nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    13A
  • Input Capacitance
    2.748nF
  • Rds On Max
    11 mΩ
  • RoHS Status
    ROHS3 Compliant
Description
DMP3015LSSQ-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2748pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

DMP3015LSSQ-13 Features
a continuous drain current (ID) of 13A
a 30V drain to source voltage (Vdss)


DMP3015LSSQ-13 Applications
There are a lot of Diodes Incorporated
DMP3015LSSQ-13 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP3015LSSQ-13 More Descriptions
Trans MOSFET P-CH 30V 13A 8-Pin SOIC T/R
DMP3015LSSQ Series 30 V 13 A P-Channel Enhancement Mode Mosfet - SOIC-8
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, 30V VDS, 20±V VGSDiodes Inc SCT
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Product Comparison
The three parts on the right have similar specifications to DMP3015LSSQ-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Input Capacitance
    Rds On Max
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Height
    DS Breakdown Voltage-Min
    Subcategory
    Element Configuration
    Rise Time
    Fall Time (Typ)
    Length
    Width
    Radiation Hardening
    View Compare
  • DMP3015LSSQ-13
    DMP3015LSSQ-13
    15 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Active
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    2.5W Ta
    P-Channel
    11mOhm @ 13A, 10V
    2V @ 250μA
    2748pF @ 20V
    13A Ta
    60.4nC @ 10V
    30V
    4.5V 10V
    ±20V
    13A
    2.748nF
    11 mΩ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP3056L-7
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1.38W Ta
    P-Channel
    50m Ω @ 6A, 10V
    2.1V @ 250μA
    642pF @ 25V
    4.3A Ta
    11.8nC @ 10V
    30V
    4.5V 10V
    ±25V
    -4.3A
    -
    -
    ROHS3 Compliant
    SILICON
    e3
    3
    EAR99
    Matte Tin (Sn)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    1
    ENHANCEMENT MODE
    1.38W
    4.9 ns
    SWITCHING
    35.2 ns
    25V
    0.05Ohm
    -30V
    20A
    150°C
    1.1mm
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP3056L-13
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1.38W Ta
    P-Channel
    50m Ω @ 6A, 10V
    2.1V @ 250μA
    642pF @ 25V
    4.3A Ta
    11.8nC @ 10V
    30V
    4.5V 10V
    ±25V
    4.3A
    -
    -
    ROHS3 Compliant
    SILICON
    e3
    3
    EAR99
    Matte Tin (Sn)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    -
    ENHANCEMENT MODE
    -
    -
    SWITCHING
    -
    -
    0.05Ohm
    -
    20A
    -
    -
    30V
    -
    -
    -
    -
    -
    -
    -
  • DMP32D4S-7
    16 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    370mW Ta
    P-Channel
    2.4 Ω @ 300mA, 10V
    2.4V @ 250μA
    51.16pF @ 15V
    300mA Ta
    1.2nC @ 10V
    30V
    4.5V 10V
    ±20V
    300mA
    -
    -
    ROHS3 Compliant
    -
    e3
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    260
    30
    -
    -
    -
    -
    -
    -
    9.86 ns
    -
    31.8 ns
    20V
    -
    -
    -
    -
    1mm
    -
    Other Transistors
    Single
    11.5ns
    21.9 ns
    3mm
    1.4mm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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