Diodes Incorporated DMP3015LSSQ-13
- Part Number:
- DMP3015LSSQ-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2484722-DMP3015LSSQ-13
- Description:
- MOSFET P-CH 30V 13A 8-SO
- Datasheet:
- DMP3015LSSQ-13
Diodes Incorporated DMP3015LSSQ-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3015LSSQ-13.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs11mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2748pF @ 20V
- Current - Continuous Drain (Id) @ 25°C13A Ta
- Gate Charge (Qg) (Max) @ Vgs60.4nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)13A
- Input Capacitance2.748nF
- Rds On Max11 mΩ
- RoHS StatusROHS3 Compliant
DMP3015LSSQ-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2748pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP3015LSSQ-13 Features
a continuous drain current (ID) of 13A
a 30V drain to source voltage (Vdss)
DMP3015LSSQ-13 Applications
There are a lot of Diodes Incorporated
DMP3015LSSQ-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2748pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP3015LSSQ-13 Features
a continuous drain current (ID) of 13A
a 30V drain to source voltage (Vdss)
DMP3015LSSQ-13 Applications
There are a lot of Diodes Incorporated
DMP3015LSSQ-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP3015LSSQ-13 More Descriptions
Trans MOSFET P-CH 30V 13A 8-Pin SOIC T/R
DMP3015LSSQ Series 30 V 13 A P-Channel Enhancement Mode Mosfet - SOIC-8
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, 30V VDS, 20±V VGSDiodes Inc SCT
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3015LSSQ Series 30 V 13 A P-Channel Enhancement Mode Mosfet - SOIC-8
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR, 30V VDS, 20±V VGSDiodes Inc SCT
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
The three parts on the right have similar specifications to DMP3015LSSQ-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceRds On MaxRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationTurn-Off Delay TimeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)HeightDS Breakdown Voltage-MinSubcategoryElement ConfigurationRise TimeFall Time (Typ)LengthWidthRadiation HardeningView Compare
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DMP3015LSSQ-1315 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO-55°C~150°C TJTape & Reel (TR)2015Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)2.5W TaP-Channel11mOhm @ 13A, 10V2V @ 250μA2748pF @ 20V13A Ta60.4nC @ 10V30V4.5V 10V±20V13A2.748nF11 mΩROHS3 Compliant---------------------------------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)--MOSFET (Metal Oxide)1.38W TaP-Channel50m Ω @ 6A, 10V2.1V @ 250μA642pF @ 25V4.3A Ta11.8nC @ 10V30V4.5V 10V±25V-4.3A--ROHS3 CompliantSILICONe33EAR99Matte Tin (Sn)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31SINGLE WITH BUILT-IN DIODE1ENHANCEMENT MODE1.38W4.9 nsSWITCHING35.2 ns25V0.05Ohm-30V20A150°C1.1mm--------
-
23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3---55°C~150°C TJTape & Reel (TR)2015Active1 (Unlimited)--MOSFET (Metal Oxide)1.38W TaP-Channel50m Ω @ 6A, 10V2.1V @ 250μA642pF @ 25V4.3A Ta11.8nC @ 10V30V4.5V 10V±25V4.3A--ROHS3 CompliantSILICONe33EAR99Matte Tin (Sn)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31SINGLE WITH BUILT-IN DIODE-ENHANCEMENT MODE--SWITCHING--0.05Ohm-20A--30V-------
-
16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33--55°C~150°C TJTape & Reel (TR)2013Active1 (Unlimited)--MOSFET (Metal Oxide)370mW TaP-Channel2.4 Ω @ 300mA, 10V2.4V @ 250μA51.16pF @ 15V300mA Ta1.2nC @ 10V30V4.5V 10V±20V300mA--ROHS3 Compliant-e3-EAR99Matte Tin (Sn)--26030------9.86 ns-31.8 ns20V----1mm-Other TransistorsSingle11.5ns21.9 ns3mm1.4mmNo
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