Diodes Incorporated DMP3015LSS-13
- Part Number:
- DMP3015LSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478765-DMP3015LSS-13
- Description:
- MOSFET P-CH 30V 13A 8-SOIC
- Datasheet:
- DMP3015LSS-13
Diodes Incorporated DMP3015LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3015LSS-13.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight850.995985mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time11.2 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2748pF @ 20V
- Current - Continuous Drain (Id) @ 25°C13A Ta
- Gate Charge (Qg) (Max) @ Vgs60.4nC @ 10V
- Rise Time12.4ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)61.7 ns
- Turn-Off Delay Time104.9 ns
- Continuous Drain Current (ID)13A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Pulsed Drain Current-Max (IDM)45A
- Height1.5mm
- Length5.3mm
- Width4.1mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMP3015LSS-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2748pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [104.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.A turn-on delay time of 11.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP3015LSS-13 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 104.9 ns
based on its rated peak drain current 45A.
a 30V drain to source voltage (Vdss)
DMP3015LSS-13 Applications
There are a lot of Diodes Incorporated
DMP3015LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2748pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [104.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.A turn-on delay time of 11.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
DMP3015LSS-13 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 104.9 ns
based on its rated peak drain current 45A.
a 30V drain to source voltage (Vdss)
DMP3015LSS-13 Applications
There are a lot of Diodes Incorporated
DMP3015LSS-13 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP3015LSS-13 More Descriptions
Mosfet, P-Ch, 30V, 13A, Soic Rohs Compliant: Yes |Diodes Inc. DMP3015LSS-13
P-Channel 30 V 13 A (Ta) 2.5 W (Ta) SMT Enhancement Mode MOSFET - SO-8
Single P-Channel Enhancement MOSFET SOP8 | Diodes Inc DMP3015LSS-13
Trans MOSFET P-CH 30V 13A Automotive 8-Pin SOP T/R
P-Channel 30 V 13 A (Ta) 2.5 W (Ta) SMT Enhancement Mode MOSFET - SO-8
Single P-Channel Enhancement MOSFET SOP8 | Diodes Inc DMP3015LSS-13
Trans MOSFET P-CH 30V 13A Automotive 8-Pin SOP T/R
The three parts on the right have similar specifications to DMP3015LSS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusNumber of FunctionsInterface IC TypeHigh Side DriverREACH SVHCLead FreeReach Compliance CodeJESD-30 CodeConfigurationCase ConnectionView Compare
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DMP3015LSS-1316 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8850.995985mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260408112.5W TaSingleENHANCEMENT MODE11.2 nsP-ChannelSWITCHING11m Ω @ 13A, 10V2V @ 250μA2748pF @ 20V13A Ta60.4nC @ 10V12.4ns30V4.5V 10V±20V61.7 ns104.9 ns13A20V-30V45A1.5mm5.3mm4.1mmNoROHS3 Compliant----------
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7 WeeksSurface MountSurface Mount8-PowerTDFN895.991485mg--55°C~150°C TJTape & Reel (TR)2012e3yesObsolete1 (Unlimited)8EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)DUAL---8-12.18W TaSingle-11.4 nsP-Channel-7.5m Ω @ 10A, 10V2.1V @ 250μA6234pF @ 15V14.5A Ta126.2nC @ 10V9.4ns30V4.5V 10V±20V99.3 ns260.7 ns36A20V-30V-1.1mm6mm5.1mmNoROHS3 Compliant1BUFFER OR INVERTER BASED MOSFET DRIVERNONo SVHCLead Free----
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15 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)2EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED-111.7W Ta-ENHANCEMENT MODE11.4 nsP-ChannelSWITCHING8m Ω @ 10A, 10V2.1V @ 250μA6234pF @ 15V17A Ta59.2nC @ 4.5V9.4ns30V4.5V 10V±20V99.3 ns260.7 ns17A20V-30V-----ROHS3 Compliant-----not_compliantR-PSSO-G2SINGLE WITH BUILT-IN DIODEDRAIN
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16 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33---55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-Other TransistorsMOSFET (Metal Oxide)--26030---370mW TaSingle-9.86 nsP-Channel-2.4 Ω @ 300mA, 10V2.4V @ 250μA51.16pF @ 15V300mA Ta1.2nC @ 10V11.5ns30V4.5V 10V±20V21.9 ns31.8 ns300mA20V--1mm3mm1.4mmNoROHS3 Compliant---------
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