Diodes Incorporated DMP3008SFG-7
- Part Number:
- DMP3008SFG-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479763-DMP3008SFG-7
- Description:
- MOSFET P-CH 30V 8.6A POWERDI
- Datasheet:
- DMP3008SFG
Diodes Incorporated DMP3008SFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3008SFG-7.
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Weight72.007789mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance25mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max900mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.2W
- Case ConnectionDRAIN
- Turn On Delay Time10.5 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs17m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2230pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8.6A Ta
- Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
- Rise Time8.5ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)8.6A
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- Height850μm
- Length3.35mm
- Width3.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP3008SFG-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2230pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.6A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 90 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
DMP3008SFG-7 Features
a continuous drain current (ID) of 8.6A
the turn-off delay time is 90 ns
a 30V drain to source voltage (Vdss)
DMP3008SFG-7 Applications
There are a lot of Diodes Incorporated
DMP3008SFG-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2230pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.6A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 90 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
DMP3008SFG-7 Features
a continuous drain current (ID) of 8.6A
the turn-off delay time is 90 ns
a 30V drain to source voltage (Vdss)
DMP3008SFG-7 Applications
There are a lot of Diodes Incorporated
DMP3008SFG-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMP3008SFG-7 More Descriptions
Single P-Channel 30 V 2.2 W 47 nC Silicon Surface Mount Mosfet - POWERDI3333-8
30V P-Ch Enhancement MOSFET PowerDI8 | Diodes Inc DMP3008SFG-7
Trans MOSFET P-CH 30V 8.6A 8-Pin PowerDI EP T/R
30V P-Ch Enhancement MOSFET PowerDI8 | Diodes Inc DMP3008SFG-7
Trans MOSFET P-CH 30V 8.6A 8-Pin PowerDI EP T/R
The three parts on the right have similar specifications to DMP3008SFG-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FormConfigurationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Number of FunctionsInterface IC TypeDrain to Source Breakdown VoltageHigh Side DriverReach Compliance CodeView Compare
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DMP3008SFG-76 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2016e3yesObsolete1 (Unlimited)5EAR9925mOhmMatte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUAL260408S-PDSO-N511900mW TaSingleENHANCEMENT MODE2.2WDRAIN10.5 nsP-ChannelSWITCHING17m Ω @ 10A, 10V2.1V @ 250μA2230pF @ 15V8.6A Ta47nC @ 10V8.5ns30V4.5V 10V±20V40 ns90 ns8.6A20V30V850μm3.35mm3.35mmNo SVHCNoROHS3 CompliantLead Free----------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)3EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)DUALNOT SPECIFIEDNOT SPECIFIED-R-PDSO-G31-1.38W Ta-ENHANCEMENT MODE---P-ChannelSWITCHING50m Ω @ 6A, 10V2.1V @ 250μA642pF @ 25V4.3A Ta11.8nC @ 10V-30V4.5V 10V±25V--4.3A-30V-----ROHS3 Compliant-GULL WINGSINGLE WITH BUILT-IN DIODE0.05Ohm20A-----
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7 WeeksSurface MountSurface Mount8-PowerTDFN895.991485mg--55°C~150°C TJTape & Reel (TR)2012e3yesObsolete1 (Unlimited)8EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)DUAL--8--12.18W TaSingle---11.4 nsP-Channel-7.5m Ω @ 10A, 10V2.1V @ 250μA6234pF @ 15V14.5A Ta126.2nC @ 10V9.4ns30V4.5V 10V±20V99.3 ns260.7 ns36A20V-1.1mm6mm5.1mmNo SVHCNoROHS3 CompliantLead Free----1BUFFER OR INVERTER BASED MOSFET DRIVER-30VNO-
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15 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--SILICON-55°C~150°C TJTape & Reel (TR)2013e3-Active1 (Unlimited)2EAR99-Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED-R-PSSO-G2111.7W Ta-ENHANCEMENT MODE-DRAIN11.4 nsP-ChannelSWITCHING8m Ω @ 10A, 10V2.1V @ 250μA6234pF @ 15V17A Ta59.2nC @ 4.5V9.4ns30V4.5V 10V±20V99.3 ns260.7 ns17A20V------ROHS3 Compliant-GULL WINGSINGLE WITH BUILT-IN DIODE-----30V-not_compliant
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