Diodes Incorporated DMP2305U-7
- Part Number:
- DMP2305U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3554093-DMP2305U-7
- Description:
- MOSFET P-CH 20V 4.2A SOT-23
- Datasheet:
- DMP2305U-7
Diodes Incorporated DMP2305U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP2305U-7.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance60mOhm
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.4W
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs60m Ω @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds727pF @ 20V
- Current - Continuous Drain (Id) @ 25°C4.2A Ta
- Gate Charge (Qg) (Max) @ Vgs7.6nC @ 4.5V
- Rise Time13ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time53.8 ns
- Continuous Drain Current (ID)4.2A
- Threshold Voltage-500mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP2305U-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 727pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.2A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.It is [53.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -500mV.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
DMP2305U-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 53.8 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)
DMP2305U-7 Applications
There are a lot of Diodes Incorporated
DMP2305U-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 727pF @ 20V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.2A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.It is [53.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -500mV.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
DMP2305U-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 53.8 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)
DMP2305U-7 Applications
There are a lot of Diodes Incorporated
DMP2305U-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMP2305U-7 More Descriptions
PFET TRANSISTOR SOT-23 -20V 4.2A 1.4W
DMP2305U Series 20 V 60 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET P-Channel 20V 4.2A SOT23 | Diodes Inc DMP2305U-7
Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
MOSFET,P CH,20V,4.2A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:-20V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET,P CH,20V,4.2A,SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -500mV; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -4.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -8V
DMP2305U Series 20 V 60 mOhm P-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET P-Channel 20V 4.2A SOT23 | Diodes Inc DMP2305U-7
Trans MOSFET P-CH 20V 4.2A Automotive 3-Pin SOT-23 T/R
MOSFET,P CH,20V,4.2A,SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:-20V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET,P CH,20V,4.2A,SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -500mV; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -4.2A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -8V
The three parts on the right have similar specifications to DMP2305U-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxFeedback Cap-Max (Crss)SeriesJESD-30 CodeConfigurationDS Breakdown Voltage-MinView Compare
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DMP2305U-715 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR9960mOhmHIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260403111.4W TaSingleENHANCEMENT MODE1.4W14 nsP-ChannelSWITCHING60m Ω @ 4.2A, 4.5V900mV @ 250μA727pF @ 20V4.2A Ta7.6nC @ 4.5V13ns20V1.8V 4.5V±8V13 ns53.8 ns4.2A-500mV8V-20V1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----------
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19 Weeks-Surface MountSurface Mount3-XFDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2011e4yesActive1 (Unlimited)3EAR99-HIGH RELIABILITY, LOW THRESHOLDOther TransistorsMOSFET (Metal Oxide)BOTTOMNO LEAD26040311350mW TaSingleENHANCEMENT MODE-7.7 nsP-ChannelSWITCHING5 Ω @ 100mA, 4.5V1V @ 250μA175pF @ 15V200mA Ta-19.3ns20V1.2V 4.5V±10V31.5 ns25.9 ns200mA-10V-20V-----ROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)DRAIN0.2A5.5Ohm20 pF----
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17 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---780mW Ta----P-Channel-90m Ω @ 3.5A, 4.5V1.25V @ 250μA303pF @ 10V3.1A Ta7.8nC @ 10V-20V2.5V 4.5V±12V--3.1A--------ROHS3 Compliant-Matte Tin (Sn)----Automotive, AEC-Q101---
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22 Weeks-Surface MountSurface Mount6-UDFN Exposed Pad--SILICON-55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)6EAR99---MOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIED-1-730mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING27m Ω @ 7A, 4.5V1V @ 250μA1837pF @ 15V7.6A Ta27nC @ 4.5V-20V1.5V 4.5V±8V--7.6A--------ROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)DRAIN-0.027Ohm--S-PDSO-N6SINGLE WITH BUILT-IN DIODE20V
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