DMN66D0LT-7

Diodes Incorporated DMN66D0LT-7

Part Number:
DMN66D0LT-7
Manufacturer:
Diodes Incorporated
Ventron No:
2479237-DMN66D0LT-7
Description:
MOSFET N-CH 60V 115MA SOT-523
ECAD Model:
Datasheet:
DMN66D0LT-7

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Specifications
Diodes Incorporated DMN66D0LT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN66D0LT-7.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-523
  • Number of Pins
    3
  • Weight
    2.012816mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    200mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    200mW
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5 Ω @ 115mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    23pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    115mA Ta
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    115mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    6Ohm
  • DS Breakdown Voltage-Min
    60V
  • Height
    750μm
  • Length
    1.6mm
  • Width
    800μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMN66D0LT-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 23pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 115mA amps.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

DMN66D0LT-7 Features
a continuous drain current (ID) of 115mA
the turn-off delay time is 33 ns
a 60V drain to source voltage (Vdss)


DMN66D0LT-7 Applications
There are a lot of Diodes Incorporated
DMN66D0LT-7 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMN66D0LT-7 More Descriptions
Mosfet, N-Ch, 60V, 0.115A, Sot-523 Rohs Compliant: Yes |Diodes Inc. DMN66D0LT-7
MOSFET N-CH 60V 115MA SOT-523 / Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
75V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to DMN66D0LT-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Series
    Gate Charge (Qg) (Max) @ Vgs
    Surface Mount
    JESD-30 Code
    Configuration
    Case Connection
    Drain Current-Max (Abs) (ID)
    Reference Standard
    View Compare
  • DMN66D0LT-7
    DMN66D0LT-7
    16 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    200mW Ta
    Single
    ENHANCEMENT MODE
    200mW
    10 ns
    N-Channel
    SWITCHING
    5 Ω @ 115mA, 10V
    2V @ 250μA
    23pF @ 25V
    115mA Ta
    60V
    5V 10V
    ±20V
    33 ns
    115mA
    20V
    6Ohm
    60V
    750μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN6040SVTQ-13
    17 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    1.2W Ta
    -
    -
    -
    -
    N-Channel
    -
    44m Ω @ 4.3A, 10V
    3V @ 250μA
    1287pF @ 25V
    5A Ta
    60V
    4.5V 10V
    ±20V
    -
    5A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Automotive, AEC-Q101
    22.4nC @ 10V
    -
    -
    -
    -
    -
    -
  • DMN65D8LFB-7
    23 Weeks
    -
    Surface Mount
    3-UFDFN
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    40
    3
    1
    -
    430mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    3 Ω @ 115mA, 10V
    2V @ 250μA
    25pF @ 25V
    260mA Ta
    60V
    5V 10V
    ±20V
    -
    -
    -
    4Ohm
    60V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    YES
    R-PBCC-N3
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    0.4A
    -
  • DMN61D8LQ-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    -
    390mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 150mA, 5V
    2V @ 1mA
    12.9pF @ 12V
    470mA Ta
    60V
    3V 5V
    ±12V
    -
    470mA
    -
    2.4Ohm
    60V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    0.74nC @ 5V
    -
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE AND RESISTOR
    -
    0.47A
    AEC-Q101
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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