Diodes Incorporated DMN66D0LT-7
- Part Number:
- DMN66D0LT-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479237-DMN66D0LT-7
- Description:
- MOSFET N-CH 60V 115MA SOT-523
- Datasheet:
- DMN66D0LT-7
Diodes Incorporated DMN66D0LT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN66D0LT-7.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max200mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200mW
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5 Ω @ 115mA, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds23pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Ta
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)115mA
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max6Ohm
- DS Breakdown Voltage-Min60V
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN66D0LT-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 23pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 115mA amps.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
DMN66D0LT-7 Features
a continuous drain current (ID) of 115mA
the turn-off delay time is 33 ns
a 60V drain to source voltage (Vdss)
DMN66D0LT-7 Applications
There are a lot of Diodes Incorporated
DMN66D0LT-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 23pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 115mA amps.It is [33 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
DMN66D0LT-7 Features
a continuous drain current (ID) of 115mA
the turn-off delay time is 33 ns
a 60V drain to source voltage (Vdss)
DMN66D0LT-7 Applications
There are a lot of Diodes Incorporated
DMN66D0LT-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMN66D0LT-7 More Descriptions
Mosfet, N-Ch, 60V, 0.115A, Sot-523 Rohs Compliant: Yes |Diodes Inc. DMN66D0LT-7
MOSFET N-CH 60V 115MA SOT-523 / Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
75V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
MOSFET N-CH 60V 115MA SOT-523 / Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523 T/R
75V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
The three parts on the right have similar specifications to DMN66D0LT-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusSeriesGate Charge (Qg) (Max) @ VgsSurface MountJESD-30 CodeConfigurationCase ConnectionDrain Current-Max (Abs) (ID)Reference StandardView Compare
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DMN66D0LT-716 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311200mW TaSingleENHANCEMENT MODE200mW10 nsN-ChannelSWITCHING5 Ω @ 115mA, 10V2V @ 250μA23pF @ 25V115mA Ta60V5V 10V±20V33 ns115mA20V6Ohm60V750μm1.6mm800μmNo SVHCNoROHS3 Compliant---------
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17 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---1.2W Ta----N-Channel-44m Ω @ 4.3A, 10V3V @ 250μA1287pF @ 25V5A Ta60V4.5V 10V±20V-5A--------ROHS3 CompliantAutomotive, AEC-Q10122.4nC @ 10V------
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23 Weeks-Surface Mount3-UFDFN--SILICON-55°C~150°C TJTape & Reel (TR)2015e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)BOTTOMNO LEAD2604031-430mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING3 Ω @ 115mA, 10V2V @ 250μA25pF @ 25V260mA Ta60V5V 10V±20V---4Ohm60V-----ROHS3 Compliant--YESR-PBCC-N3SINGLE WITH BUILT-IN DIODEDRAIN0.4A-
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED-1-390mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING1.8 Ω @ 150mA, 5V2V @ 1mA12.9pF @ 12V470mA Ta60V3V 5V±12V-470mA-2.4Ohm60V-----ROHS3 Compliant-0.74nC @ 5V-R-PDSO-G3SINGLE WITH BUILT-IN DIODE AND RESISTOR-0.47AAEC-Q101
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