Diodes Incorporated DMN63D8LW-13
- Part Number:
- DMN63D8LW-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478550-DMN63D8LW-13
- Description:
- MOSFET N-CH 30V 0.38A SOT323
- Datasheet:
- DMN63D8LW-13
Diodes Incorporated DMN63D8LW-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN63D8LW-13.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max300mW Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time2.3 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.8 Ω @ 250mA, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds23.2pF @ 25V
- Current - Continuous Drain (Id) @ 25°C380mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.9nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time11.4 ns
- Continuous Drain Current (ID)380mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.38A
- Drain-source On Resistance-Max4.5Ohm
- Drain to Source Breakdown Voltage30V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- RoHS StatusROHS3 Compliant
DMN63D8LW-13 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23.2pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 380mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.38A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.4 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (2.5V 10V), this device helps reduce its overall power consumption.
DMN63D8LW-13 Features
a continuous drain current (ID) of 380mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.4 ns
DMN63D8LW-13 Applications
There are a lot of Diodes Incorporated
DMN63D8LW-13 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 23.2pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 380mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.38A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.4 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 2.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (2.5V 10V), this device helps reduce its overall power consumption.
DMN63D8LW-13 Features
a continuous drain current (ID) of 380mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.4 ns
DMN63D8LW-13 Applications
There are a lot of Diodes Incorporated
DMN63D8LW-13 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMN63D8LW-13 More Descriptions
Mosfet, N-Ch, 30V, 0.38A, Sot-323 Rohs Compliant: Yes |Diodes Inc. DMN63D8LW-13
Single N-Channel 30 V 3.8 Ohm 0.4 nC 420 mW Silicon SMT Mosfet - SOT-323
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Trans MOSFET N-CH 30V 0.38A 3-Pin SOT-323 T/R
Small Signal Field-Effect Transistor, 0.38A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 25V~30V SOT323 T&R 10K
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SC-70, SOT-323 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8 Ω @ 250mA, 10V 380mA Ta -55°C~150°C TJ MOSFET N-CH 30V 0.38A SOT323
Single N-Channel 30 V 3.8 Ohm 0.4 nC 420 mW Silicon SMT Mosfet - SOT-323
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Trans MOSFET N-CH 30V 0.38A 3-Pin SOT-323 T/R
Small Signal Field-Effect Transistor, 0.38A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 25V~30V SOT323 T&R 10K
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SC-70, SOT-323 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8 Ω @ 250mA, 10V 380mA Ta -55°C~150°C TJ MOSFET N-CH 30V 0.38A SOT323
The three parts on the right have similar specifications to DMN63D8LW-13.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRoHS StatusSeriesDrain to Source Voltage (Vdss)Surface MountPbfree CodeSubcategoryPin CountCase ConnectionDS Breakdown Voltage-MinReference StandardView Compare
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DMN63D8LW-1314 WeeksSurface MountSurface MountSC-70, SOT-323SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WING26030R-PDSO-G31SINGLE WITH BUILT-IN DIODE1300mW TaENHANCEMENT MODE300mW2.3 nsN-ChannelSWITCHING2.8 Ω @ 250mA, 10V1.5V @ 250μA23.2pF @ 25V380mA Ta0.9nC @ 10V2.5V 10V±20V11.4 ns380mA20V0.38A4.5Ohm30V150°C1.1mmROHS3 Compliant----------
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17 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6--55°C~150°C TJTape & Reel (TR)-e3Active1 (Unlimited)-EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED----1.2W Ta---N-Channel-44m Ω @ 4.3A, 10V3V @ 250μA1287pF @ 25V5A Ta22.4nC @ 10V4.5V 10V±20V-5A------ROHS3 CompliantAutomotive, AEC-Q10160V-------
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23 Weeks-Surface Mount3-UFDFNSILICON-55°C~150°C TJTape & Reel (TR)2015e4Active1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYMOSFET (Metal Oxide)BOTTOMNO LEAD26040R-PBCC-N31SINGLE WITH BUILT-IN DIODE-430mW TaENHANCEMENT MODE--N-ChannelSWITCHING3 Ω @ 115mA, 10V2V @ 250μA25pF @ 25V260mA Ta-5V 10V±20V---0.4A4Ohm---ROHS3 Compliant-60VYESyesFET General Purpose Power3DRAIN60V-
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17 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31SINGLE WITH BUILT-IN DIODE AND RESISTOR-390mW TaENHANCEMENT MODE--N-ChannelSWITCHING1.8 Ω @ 150mA, 5V2V @ 1mA12.9pF @ 12V470mA Ta0.74nC @ 5V3V 5V±12V-470mA-0.47A2.4Ohm---ROHS3 Compliant-60V-----60VAEC-Q101
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