Diodes Incorporated DMN63D8L-7

Name: DMN63D8L-7
Brand: Diodes Incorporated
SKU: 2849122-DMN63D8L-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN63D8L-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2849122-DMN63D8L-7

Description:: MOSFET N-CH 30V 0.35A SOT23

ECAD Model:

Datasheet:: DMN63D8L-7

Specifications

Diodes Incorporated DMN63D8L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN63D8L-7.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Power Dissipation-Max
350mW Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.8 Ω @ 250mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
23.2pF @ 25V
Current - Continuous Drain (Id) @ 25°C
350mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.9nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
350mA
RoHS Status
ROHS3 Compliant

Description

DMN63D8L-7 Overview
A device's maximum input capacitance is 23.2pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 350mA for this device. Drain current refers to the capacity of the device to conduct continuous current.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 10V) to reduce its overall power consumption.

DMN63D8L-7 Features
a continuous drain current (ID) of 350mA
a 30V drain to source voltage (Vdss)

DMN63D8L-7 Applications
There are a lot of Diodes Incorporated
DMN63D8L-7 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

DMN63D8L-7 More Descriptions

Mosfet, N-Ch, 30V, 0.35A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN63D8L-7
Trans MOSFET N-CH 30V 0.35A 3-Pin SOT-23 T/R
N-Channel 30 V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
MOSFET BVDSS: 25V~30V SOT23 T&R 3K
Small Signal Field-Effect Transistor

Product Comparison

The three parts on the right have similar specifications to DMN63D8L-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Terminal Finish

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

RoHS Status

Series

Surface Mount

Transistor Element Material

Pbfree Code

Number of Terminations

Additional Feature

Subcategory

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Reference Standard

View Compare
DMN63D8L-7

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

350mW Ta

N-Channel

2.8 Ω @ 250mA, 10V

1.5V @ 250μA

23.2pF @ 25V

350mA Ta

0.9nC @ 10V

30V

2.5V 10V

±20V

350mA

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN6040SVTQ-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

1.2W Ta

N-Channel

44m Ω @ 4.3A, 10V

3V @ 250μA

1287pF @ 25V

5A Ta

22.4nC @ 10V

60V

4.5V 10V

±20V

5A

ROHS3 Compliant

Automotive, AEC-Q101

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DMN63D8L-7 vs DMN6040SVTQ-13
DMN65D8LFB-7

Diodes Incorporated

23 Weeks

-

Surface Mount

3-UFDFN

-55°C~150°C TJ

Tape & Reel (TR)

2015

e4

Active

1 (Unlimited)

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

MOSFET (Metal Oxide)

260

40

430mW Ta

N-Channel

3 Ω @ 115mA, 10V

2V @ 250μA

25pF @ 25V

260mA Ta

-

60V

5V 10V

±20V

-

ROHS3 Compliant

-

YES

SILICON

yes

3

HIGH RELIABILITY

FET General Purpose Power

BOTTOM

NO LEAD

3

R-PBCC-N3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

0.4A

4Ohm

60V

-

DMN63D8L-7 vs DMN65D8LFB-7
DMN61D8LQ-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

390mW Ta

N-Channel

1.8 Ω @ 150mA, 5V

2V @ 1mA

12.9pF @ 12V

470mA Ta

0.74nC @ 5V

60V

3V 5V

±12V

470mA

ROHS3 Compliant

-

-

SILICON

-

3

HIGH RELIABILITY

-

DUAL

GULL WING

-

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE AND RESISTOR

ENHANCEMENT MODE

-

SWITCHING

0.47A

2.4Ohm

60V

AEC-Q101

DMN63D8L-7 vs DMN61D8LQ-13