Diodes Incorporated DMN6140L-13

Name: DMN6140L-13
Brand: Diodes Incorporated
SKU: 2480848-DMN6140L-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN6140L-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2480848-DMN6140L-13

Description:: MOSFET N-CH 60V 1.6A SOT23

ECAD Model:

Datasheet:: DMN6140L-13

Specifications

Diodes Incorporated DMN6140L-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN6140L-13.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
DMN6140
Reference Standard
AEC-Q101
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
700mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
140m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
315pF @ 40V
Current - Continuous Drain (Id) @ 25°C
1.6A Ta
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
1.6A
Drain-source On Resistance-Max
0.14Ohm
DS Breakdown Voltage-Min
60V
RoHS Status
ROHS3 Compliant

Description

DMN6140L-13 Description
DMN6140L-13 is a 60v N-channel enhancement mode MOSFET. The new generation MOSFET DMN6140L-13 is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. The DMN6140L-13 can be applied in DC-DC converters, power management functions, and analog switch applications.

DMN6140L-13 Features
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant

DMN6140L-13 Applications
DC-DC Converters Power Management Functions Analog Switch Communications equipment Wired networking

DMN6140L-13 More Descriptions

DMN6140L Series 60 V 1.6 A N-Channel Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SOT-23 T/R
MOSFET, N-CH, 60V, 1.6A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.092ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 700mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Product Comparison

The three parts on the right have similar specifications to DMN6140L-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Series

Surface Mount

Pbfree Code

Subcategory

Pin Count

Case Connection

Drain Current-Max (Abs) (ID)

View Compare
DMN6140L-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

8541.29.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

DMN6140

AEC-Q101

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE

700mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

140m Ω @ 1.8A, 10V

3V @ 250μA

315pF @ 40V

1.6A Ta

8.6nC @ 10V

60V

4.5V 10V

±20V

1.6A

0.14Ohm

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-
DMN601WKQ-13

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

-

-65°C~150°C TJ

Tape & Reel (TR)

-

e3

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

200mW Ta

-

N-Channel

-

2 Ω @ 500mA, 10V

2.5V @ 1mA

50pF @ 25V

-

-

60V

4.5V 10V

±20V

-

-

-

ROHS3 Compliant

Automotive, AEC-Q101

-

-

-

-

-

-

DMN6140L-13 vs DMN601WKQ-13
DMN65D8LFB-7

Diodes Incorporated

23 Weeks

-

Surface Mount

3-UFDFN

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e4

Active

1 (Unlimited)

3

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

HIGH RELIABILITY

-

MOSFET (Metal Oxide)

BOTTOM

NO LEAD

260

40

-

-

R-PBCC-N3

1

SINGLE WITH BUILT-IN DIODE

430mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

3 Ω @ 115mA, 10V

2V @ 250μA

25pF @ 25V

260mA Ta

-

60V

5V 10V

±20V

-

4Ohm

60V

ROHS3 Compliant

-

YES

yes

FET General Purpose Power

3

DRAIN

0.4A

DMN6140L-13 vs DMN65D8LFB-7
DMN61D8LQ-13

Diodes Incorporated

17 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

AEC-Q101

R-PDSO-G3

1

SINGLE WITH BUILT-IN DIODE AND RESISTOR

390mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

1.8 Ω @ 150mA, 5V

2V @ 1mA

12.9pF @ 12V

470mA Ta

0.74nC @ 5V

60V

3V 5V

±12V

470mA

2.4Ohm

60V

ROHS3 Compliant

-

-

-

-

-

-

0.47A

DMN6140L-13 vs DMN61D8LQ-13