DMN2600UFB-7

Diodes Incorporated DMN2600UFB-7

Part Number:
DMN2600UFB-7
Manufacturer:
Diodes Incorporated
Ventron No:
2480121-DMN2600UFB-7
Description:
MOSFET N-CH 25V 1.3A DFN1006-3
ECAD Model:
Datasheet:
DMN2600UFB-7

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Specifications
Diodes Incorporated DMN2600UFB-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2600UFB-7.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-UFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    HIGH RELIABILITY, LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    2
  • Power Dissipation-Max
    540mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4.1 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    350m Ω @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    70.13pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    1.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.85nC @ 4.5V
  • Rise Time
    11.5ns
  • Drain to Source Voltage (Vdss)
    25V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    20.9 ns
  • Turn-Off Delay Time
    34.8 ns
  • Continuous Drain Current (ID)
    1.3A
  • Gate to Source Voltage (Vgs)
    8V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMN2600UFB-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 70.13pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.3A amps.It is [34.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

DMN2600UFB-7 Features
a continuous drain current (ID) of 1.3A
the turn-off delay time is 34.8 ns
a 25V drain to source voltage (Vdss)


DMN2600UFB-7 Applications
There are a lot of Diodes Incorporated
DMN2600UFB-7 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMN2600UFB-7 More Descriptions
Single N-Channel 25 V 600 mOhm 0.85 nC 0.54 W Silicon SMT Mosfet - UFDFN-3
Mosfet, N-Ch, 25V, 1.3A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2600UFB-7
Trans MOSFET N-CH 25V 1.3A Automotive 3-Pin DFN T/R
MOSFET, N-CH, 25V, 1.3A, X1-DFN1006;
N-Channel Mosfet, 25V VDS, 8±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistors
Product Comparison
The three parts on the right have similar specifications to DMN2600UFB-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Base Part Number
    Element Configuration
    Terminal Form
    JESD-30 Code
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    View Compare
  • DMN2600UFB-7
    DMN2600UFB-7
    17 Weeks
    Surface Mount
    Surface Mount
    3-UFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY, LOW THRESHOLD
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    260
    40
    3
    1
    SINGLE WITH BUILT-IN DIODE
    2
    540mW Ta
    ENHANCEMENT MODE
    DRAIN
    4.1 ns
    N-Channel
    SWITCHING
    350m Ω @ 200mA, 4.5V
    1V @ 250μA
    70.13pF @ 15V
    1.3A Ta
    0.85nC @ 4.5V
    11.5ns
    25V
    1.8V 4.5V
    ±8V
    20.9 ns
    34.8 ns
    1.3A
    8V
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • DMN2028UVT-13
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    260
    30
    -
    -
    -
    -
    1.2W Ta
    -
    -
    -
    N-Channel
    -
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    856pF @ 10V
    6.2A Ta
    8.3nC @ 4.5V
    -
    20V
    2.5V 4.5V
    ±8V
    -
    -
    6.2A
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
  • DMN2011UFDE-7
    23 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    610mW Ta
    -
    -
    3.6 ns
    N-Channel
    -
    9.5m Ω @ 7A, 4.5V
    1V @ 250μA
    2248pF @ 10V
    11.7A Ta
    56nC @ 10V
    2.6ns
    20V
    1.5V 4.5V
    ±12V
    13.5 ns
    21.6 ns
    11.7A
    12V
    -
    -
    ROHS3 Compliant
    DMN2011
    Single
    -
    -
    -
    -
  • DMN2022UFDF-7
    14 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    30
    -
    1
    -
    1
    660mW Ta
    ENHANCEMENT MODE
    DRAIN
    56 ns
    N-Channel
    SWITCHING
    22m Ω @ 4A, 4.5V
    1V @ 250μA
    907pF @ 10V
    7.9A Ta
    18nC @ 8V
    87ns
    -
    1.5V 4.5V
    ±8V
    239 ns
    632 ns
    7.9A
    8V
    -
    -
    ROHS3 Compliant
    -
    Single
    NO LEAD
    S-PDSO-N6
    0.05Ohm
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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