Diodes Incorporated DMN2600UFB-7
- Part Number:
- DMN2600UFB-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2480121-DMN2600UFB-7
- Description:
- MOSFET N-CH 25V 1.3A DFN1006-3
- Datasheet:
- DMN2600UFB-7
Diodes Incorporated DMN2600UFB-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2600UFB-7.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-UFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureHIGH RELIABILITY, LOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels2
- Power Dissipation-Max540mW Ta
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time4.1 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs350m Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds70.13pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
- Gate Charge (Qg) (Max) @ Vgs0.85nC @ 4.5V
- Rise Time11.5ns
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)20.9 ns
- Turn-Off Delay Time34.8 ns
- Continuous Drain Current (ID)1.3A
- Gate to Source Voltage (Vgs)8V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN2600UFB-7 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 70.13pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.3A amps.It is [34.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
DMN2600UFB-7 Features
a continuous drain current (ID) of 1.3A
the turn-off delay time is 34.8 ns
a 25V drain to source voltage (Vdss)
DMN2600UFB-7 Applications
There are a lot of Diodes Incorporated
DMN2600UFB-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 70.13pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.3A amps.It is [34.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
DMN2600UFB-7 Features
a continuous drain current (ID) of 1.3A
the turn-off delay time is 34.8 ns
a 25V drain to source voltage (Vdss)
DMN2600UFB-7 Applications
There are a lot of Diodes Incorporated
DMN2600UFB-7 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
DMN2600UFB-7 More Descriptions
Single N-Channel 25 V 600 mOhm 0.85 nC 0.54 W Silicon SMT Mosfet - UFDFN-3
Mosfet, N-Ch, 25V, 1.3A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2600UFB-7
Trans MOSFET N-CH 25V 1.3A Automotive 3-Pin DFN T/R
MOSFET, N-CH, 25V, 1.3A, X1-DFN1006;
N-Channel Mosfet, 25V VDS, 8±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistors
Mosfet, N-Ch, 25V, 1.3A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2600UFB-7
Trans MOSFET N-CH 25V 1.3A Automotive 3-Pin DFN T/R
MOSFET, N-CH, 25V, 1.3A, X1-DFN1006;
N-Channel Mosfet, 25V VDS, 8±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistors
The three parts on the right have similar specifications to DMN2600UFB-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)REACH SVHCRadiation HardeningRoHS StatusBase Part NumberElement ConfigurationTerminal FormJESD-30 CodeDrain-source On Resistance-MaxDrain to Source Breakdown VoltageView Compare
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DMN2600UFB-717 WeeksSurface MountSurface Mount3-UFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2011e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY, LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)BOTTOM2604031SINGLE WITH BUILT-IN DIODE2540mW TaENHANCEMENT MODEDRAIN4.1 nsN-ChannelSWITCHING350m Ω @ 200mA, 4.5V1V @ 250μA70.13pF @ 15V1.3A Ta0.85nC @ 4.5V11.5ns25V1.8V 4.5V±8V20.9 ns34.8 ns1.3A8VNo SVHCNoROHS3 Compliant-------
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15 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6---55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)-26030----1.2W Ta---N-Channel-24m Ω @ 6.2A, 4.5V1.5V @ 250μA856pF @ 10V6.2A Ta8.3nC @ 4.5V-20V2.5V 4.5V±8V--6.2A---ROHS3 Compliant------
-
23 WeeksSurface MountSurface Mount6-UDFN Exposed Pad---55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)-EAR99Nickel/Palladium/Gold (Ni/Pd/Au)--MOSFET (Metal Oxide)------1610mW Ta--3.6 nsN-Channel-9.5m Ω @ 7A, 4.5V1V @ 250μA2248pF @ 10V11.7A Ta56nC @ 10V2.6ns20V1.5V 4.5V±12V13.5 ns21.6 ns11.7A12V--ROHS3 CompliantDMN2011Single----
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14 WeeksSurface MountSurface Mount6-UDFN Exposed Pad-SILICON-55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY-MOSFET (Metal Oxide)DUAL26030-1-1660mW TaENHANCEMENT MODEDRAIN56 nsN-ChannelSWITCHING22m Ω @ 4A, 4.5V1V @ 250μA907pF @ 10V7.9A Ta18nC @ 8V87ns-1.5V 4.5V±8V239 ns632 ns7.9A8V--ROHS3 Compliant-SingleNO LEADS-PDSO-N60.05Ohm20V
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