Diodes Incorporated DMN2400UFD-7
- Part Number:
- DMN2400UFD-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2480853-DMN2400UFD-7
- Description:
- MOSFET N-CH 20V 0.9A DFN1212-3
- Datasheet:
- DMN2400UFD
Diodes Incorporated DMN2400UFD-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2400UFD-7.
- Factory Lead Time40 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-UDFN
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2012
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Number of Channels1
- Power Dissipation-Max400mW Ta
- Turn On Delay Time4.06 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs600m Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds37pF @ 16V
- Current - Continuous Drain (Id) @ 25°C900mA Ta
- Gate Charge (Qg) (Max) @ Vgs500nC @ 4.5V
- Rise Time7.28ns
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)10.54 ns
- Turn-Off Delay Time13.74 ns
- Continuous Drain Current (ID)900mA
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN2400UFD-7 Overview
A device's maximal input capacitance is 37pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 900mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13.74 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.06 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).
DMN2400UFD-7 Features
a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 13.74 ns
DMN2400UFD-7 Applications
There are a lot of Diodes Incorporated
DMN2400UFD-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 37pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 900mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13.74 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.06 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).
DMN2400UFD-7 Features
a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 13.74 ns
DMN2400UFD-7 Applications
There are a lot of Diodes Incorporated
DMN2400UFD-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN2400UFD-7 More Descriptions
N-Channel 20 V 600 mO 500 nC SMT Enhancement Mode Mosfet - X1-DFN1212-3
Trans MOSFET N-CH 20V 0.9A Automotive 3-Pin X1-DFN T/R
Small Signal Field-Effect Transistor
MOSFET N-CH 20V 0.9A DFN1212-3
Trans MOSFET N-CH 20V 0.9A Automotive 3-Pin X1-DFN T/R
Small Signal Field-Effect Transistor
MOSFET N-CH 20V 0.9A DFN1212-3
The three parts on the right have similar specifications to DMN2400UFD-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsPower Dissipation-MaxTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageREACH SVHCRoHS StatusLead FreeDrain to Source Voltage (Vdss)WeightTransistor Element MaterialNumber of TerminationsResistanceAdditional FeatureSubcategoryTerminal PositionTerminal FormPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTransistor ApplicationThreshold VoltageMax Junction Temperature (Tj)HeightLengthWidthRadiation HardeningView Compare
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DMN2400UFD-740 WeeksSurface MountSurface Mount3-UDFN3-55°C~150°C TJCut Tape (CT)2012e4yesObsolete1 (Unlimited)EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)260401400mW Ta4.06 nsN-Channel600m Ω @ 200mA, 4.5V1V @ 250μA37pF @ 16V900mA Ta500nC @ 4.5V7.28ns1.5V 4.5V±12V10.54 ns13.74 ns900mA12V20VNo SVHCROHS3 CompliantLead Free----------------------
-
15 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6--55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)26030-1.2W Ta-N-Channel24m Ω @ 6.2A, 4.5V1.5V @ 250μA856pF @ 10V6.2A Ta8.3nC @ 4.5V-2.5V 4.5V±8V--6.2A---ROHS3 Compliant-20V--------------------
-
16 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6--55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED-1.15W Ta-N-Channel24m Ω @ 6.2A, 4.5V1.5V @ 250μA887pF @ 10V6.2A Tc18.4nC @ 8V-2.5V 4.5V±10V--6.2A---ROHS3 Compliant-20V--------------------
-
14 WeeksSurface MountSurface MountSOT-5233-55°C~150°C TJCut Tape (CT)2009e3yesActive1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)260401300mW Ta3.8 nsN-Channel3 Ω @ 100mA, 4.5V1V @ 250μA14.1pF @ 15V230mA Ta-7.9ns1.2V 4.5V±10V15.2 ns13.4 ns230mA10V20VNo SVHCROHS3 CompliantLead Free-2.012816mgSILICON33OhmHIGH RELIABILITYFET General Purpose PowerDUALGULL WING31SingleENHANCEMENT MODE300mWSWITCHING1V150°C900μm1.7mm850μmNo
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