DMN2400UFD-7

Diodes Incorporated DMN2400UFD-7

Part Number:
DMN2400UFD-7
Manufacturer:
Diodes Incorporated
Ventron No:
2480853-DMN2400UFD-7
Description:
MOSFET N-CH 20V 0.9A DFN1212-3
ECAD Model:
Datasheet:
DMN2400UFD

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Specifications
Diodes Incorporated DMN2400UFD-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2400UFD-7.
  • Factory Lead Time
    40 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-UDFN
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2012
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Number of Channels
    1
  • Power Dissipation-Max
    400mW Ta
  • Turn On Delay Time
    4.06 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    600m Ω @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    37pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    900mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    500nC @ 4.5V
  • Rise Time
    7.28ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    10.54 ns
  • Turn-Off Delay Time
    13.74 ns
  • Continuous Drain Current (ID)
    900mA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    20V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN2400UFD-7 Overview
A device's maximal input capacitance is 37pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 900mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 13.74 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.06 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This device reduces its overall power consumption by using drive voltage (1.5V 4.5V).

DMN2400UFD-7 Features
a continuous drain current (ID) of 900mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 13.74 ns


DMN2400UFD-7 Applications
There are a lot of Diodes Incorporated
DMN2400UFD-7 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN2400UFD-7 More Descriptions
N-Channel 20 V 600 mO 500 nC SMT Enhancement Mode Mosfet - X1-DFN1212-3
Trans MOSFET N-CH 20V 0.9A Automotive 3-Pin X1-DFN T/R
Small Signal Field-Effect Transistor
MOSFET N-CH 20V 0.9A DFN1212-3
Product Comparison
The three parts on the right have similar specifications to DMN2400UFD-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Power Dissipation-Max
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    REACH SVHC
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Weight
    Transistor Element Material
    Number of Terminations
    Resistance
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Transistor Application
    Threshold Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • DMN2400UFD-7
    DMN2400UFD-7
    40 Weeks
    Surface Mount
    Surface Mount
    3-UDFN
    3
    -55°C~150°C TJ
    Cut Tape (CT)
    2012
    e4
    yes
    Obsolete
    1 (Unlimited)
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    260
    40
    1
    400mW Ta
    4.06 ns
    N-Channel
    600m Ω @ 200mA, 4.5V
    1V @ 250μA
    37pF @ 16V
    900mA Ta
    500nC @ 4.5V
    7.28ns
    1.5V 4.5V
    ±12V
    10.54 ns
    13.74 ns
    900mA
    12V
    20V
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN2028UVT-13
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    260
    30
    -
    1.2W Ta
    -
    N-Channel
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    856pF @ 10V
    6.2A Ta
    8.3nC @ 4.5V
    -
    2.5V 4.5V
    ±8V
    -
    -
    6.2A
    -
    -
    -
    ROHS3 Compliant
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN2026UVT-13
    16 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1.15W Ta
    -
    N-Channel
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    887pF @ 10V
    6.2A Tc
    18.4nC @ 8V
    -
    2.5V 4.5V
    ±10V
    -
    -
    6.2A
    -
    -
    -
    ROHS3 Compliant
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN26D0UT-7
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    -55°C~150°C TJ
    Cut Tape (CT)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    260
    40
    1
    300mW Ta
    3.8 ns
    N-Channel
    3 Ω @ 100mA, 4.5V
    1V @ 250μA
    14.1pF @ 15V
    230mA Ta
    -
    7.9ns
    1.2V 4.5V
    ±10V
    15.2 ns
    13.4 ns
    230mA
    10V
    20V
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    2.012816mg
    SILICON
    3
    3Ohm
    HIGH RELIABILITY
    FET General Purpose Power
    DUAL
    GULL WING
    3
    1
    Single
    ENHANCEMENT MODE
    300mW
    SWITCHING
    1V
    150°C
    900μm
    1.7mm
    850μm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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