DMN2400UFB4-7

Diodes Incorporated DMN2400UFB4-7

Part Number:
DMN2400UFB4-7
Manufacturer:
Diodes Incorporated
Ventron No:
2478923-DMN2400UFB4-7
Description:
MOSFET N-CH 20V 750MA DFN1006H4
ECAD Model:
Datasheet:
DMN2400UFB4

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Specifications
Diodes Incorporated DMN2400UFB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2400UFB4-7.
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY, LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    470mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4.11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    550m Ω @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    36pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    750mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.5nC @ 4.5V
  • Rise Time
    3.82ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    9.6 ns
  • Turn-Off Delay Time
    14.8 ns
  • Continuous Drain Current (ID)
    750mA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    0.75A
  • Drain-source On Resistance-Max
    0.55Ohm
  • DS Breakdown Voltage-Min
    20V
  • Height
    350μm
  • Length
    1.08mm
  • Width
    675μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN2400UFB4-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 16V.This device conducts a continuous drain current (ID) of 750mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.75A.When the device is turned off, a turn-off delay time of 14.8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).

DMN2400UFB4-7 Features
a continuous drain current (ID) of 750mA
the turn-off delay time is 14.8 ns
a 20V drain to source voltage (Vdss)


DMN2400UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN2400UFB4-7 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMN2400UFB4-7 More Descriptions
Trans MOSFET N-CH 20V 0.75A 3-Pin DFN T/R / MOSFET N-CH 20V 750MA DFN1006H4
N-Channel 550 mO 20 V 0.75 A Surface Mount Enhancement Mode MosFet - DFN-H4
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:750Ma; On Resistance Rds(On):0.55Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: No
Product Comparison
The three parts on the right have similar specifications to DMN2400UFB4-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Base Part Number
    Terminal Form
    JESD-30 Code
    Drain to Source Breakdown Voltage
    View Compare
  • DMN2400UFB4-7
    DMN2400UFB4-7
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e4
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY, LOW THRESHOLD
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    260
    40
    3
    1
    1
    470mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    4.11 ns
    N-Channel
    SWITCHING
    550m Ω @ 600mA, 4.5V
    900mV @ 250μA
    36pF @ 16V
    750mA Ta
    0.5nC @ 4.5V
    3.82ns
    20V
    1.8V 4.5V
    ±12V
    9.6 ns
    14.8 ns
    750mA
    12V
    0.75A
    0.55Ohm
    20V
    350μm
    1.08mm
    675μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • DMN2026UVT-13
    16 Weeks
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    1.15W Ta
    -
    -
    -
    -
    N-Channel
    -
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    887pF @ 10V
    6.2A Tc
    18.4nC @ 8V
    -
    20V
    2.5V 4.5V
    ±10V
    -
    -
    6.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    -
    -
    -
    -
  • DMN2011UFDE-7
    23 Weeks
    -
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    610mW Ta
    Single
    -
    -
    3.6 ns
    N-Channel
    -
    9.5m Ω @ 7A, 4.5V
    1V @ 250μA
    2248pF @ 10V
    11.7A Ta
    56nC @ 10V
    2.6ns
    20V
    1.5V 4.5V
    ±12V
    13.5 ns
    21.6 ns
    11.7A
    12V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    DMN2011
    -
    -
    -
  • DMN2022UFDF-7
    14 Weeks
    -
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    30
    -
    1
    1
    660mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    56 ns
    N-Channel
    SWITCHING
    22m Ω @ 4A, 4.5V
    1V @ 250μA
    907pF @ 10V
    7.9A Ta
    18nC @ 8V
    87ns
    -
    1.5V 4.5V
    ±8V
    239 ns
    632 ns
    7.9A
    8V
    -
    0.05Ohm
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    NO LEAD
    S-PDSO-N6
    20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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