Diodes Incorporated DMN2400UFB4-7
- Part Number:
- DMN2400UFB4-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478923-DMN2400UFB4-7
- Description:
- MOSFET N-CH 20V 750MA DFN1006H4
- Datasheet:
- DMN2400UFB4
Diodes Incorporated DMN2400UFB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2400UFB4-7.
- Factory Lead Time6 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY, LOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max470mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time4.11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs550m Ω @ 600mA, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds36pF @ 16V
- Current - Continuous Drain (Id) @ 25°C750mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.5nC @ 4.5V
- Rise Time3.82ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)9.6 ns
- Turn-Off Delay Time14.8 ns
- Continuous Drain Current (ID)750mA
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)0.75A
- Drain-source On Resistance-Max0.55Ohm
- DS Breakdown Voltage-Min20V
- Height350μm
- Length1.08mm
- Width675μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN2400UFB4-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 16V.This device conducts a continuous drain current (ID) of 750mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.75A.When the device is turned off, a turn-off delay time of 14.8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
DMN2400UFB4-7 Features
a continuous drain current (ID) of 750mA
the turn-off delay time is 14.8 ns
a 20V drain to source voltage (Vdss)
DMN2400UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN2400UFB4-7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 16V.This device conducts a continuous drain current (ID) of 750mA, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 0.75A.When the device is turned off, a turn-off delay time of 14.8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
DMN2400UFB4-7 Features
a continuous drain current (ID) of 750mA
the turn-off delay time is 14.8 ns
a 20V drain to source voltage (Vdss)
DMN2400UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN2400UFB4-7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMN2400UFB4-7 More Descriptions
Trans MOSFET N-CH 20V 0.75A 3-Pin DFN T/R / MOSFET N-CH 20V 750MA DFN1006H4
N-Channel 550 mO 20 V 0.75 A Surface Mount Enhancement Mode MosFet - DFN-H4
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:750Ma; On Resistance Rds(On):0.55Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: No
N-Channel 550 mO 20 V 0.75 A Surface Mount Enhancement Mode MosFet - DFN-H4
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:750Ma; On Resistance Rds(On):0.55Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: No
The three parts on the right have similar specifications to DMN2400UFB4-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishBase Part NumberTerminal FormJESD-30 CodeDrain to Source Breakdown VoltageView Compare
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DMN2400UFB4-76 WeeksGoldSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2011e4yesObsolete1 (Unlimited)3EAR99HIGH RELIABILITY, LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)BOTTOM26040311470mW TaSingleENHANCEMENT MODEDRAIN4.11 nsN-ChannelSWITCHING550m Ω @ 600mA, 4.5V900mV @ 250μA36pF @ 16V750mA Ta0.5nC @ 4.5V3.82ns20V1.8V 4.5V±12V9.6 ns14.8 ns750mA12V0.75A0.55Ohm20V350μm1.08mm675μmNo SVHCNoROHS3 CompliantLead Free------
-
16 Weeks-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6---55°C~150°C TJTape & Reel (TR)2015e3-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---1.15W Ta----N-Channel-24m Ω @ 6.2A, 4.5V1.5V @ 250μA887pF @ 10V6.2A Tc18.4nC @ 8V-20V2.5V 4.5V±10V--6.2A---------ROHS3 Compliant-Matte Tin (Sn)----
-
23 Weeks-Surface MountSurface Mount6-UDFN Exposed Pad---55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-----1610mW TaSingle--3.6 nsN-Channel-9.5m Ω @ 7A, 4.5V1V @ 250μA2248pF @ 10V11.7A Ta56nC @ 10V2.6ns20V1.5V 4.5V±12V13.5 ns21.6 ns11.7A12V--------ROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)DMN2011---
-
14 Weeks-Surface MountSurface Mount6-UDFN Exposed Pad-SILICON-55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)6EAR99HIGH RELIABILITY-MOSFET (Metal Oxide)DUAL26030-11660mW TaSingleENHANCEMENT MODEDRAIN56 nsN-ChannelSWITCHING22m Ω @ 4A, 4.5V1V @ 250μA907pF @ 10V7.9A Ta18nC @ 8V87ns-1.5V 4.5V±8V239 ns632 ns7.9A8V-0.05Ohm------ROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)-NO LEADS-PDSO-N620V
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