Diodes Incorporated DMN2112SN-7

Name: DMN2112SN-7
Brand: Diodes Incorporated
SKU: 2481825-DMN2112SN-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN2112SN-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2481825-DMN2112SN-7

Description:: MOSFET N-CH 20V 1.2A SC59-3

ECAD Model:

Datasheet:: DMN2112SN-7

Specifications

Diodes Incorporated DMN2112SN-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2112SN-7.

Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
500mW
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
220pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.2A Ta
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
65 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
8V
Drain-source On Resistance-Max
0.25Ohm
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Nominal Vgs
1.2 V
Height
1.3mm
Length
3.1mm
Width
1.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DMN2112SN-7 Overview
A device's maximum input capacitance is 220pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.2V.This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.

DMN2112SN-7 Features
a continuous drain current (ID) of 1.2A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 75 ns
a threshold voltage of 1.2V

DMN2112SN-7 Applications
There are a lot of Diodes Incorporated
DMN2112SN-7 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

DMN2112SN-7 More Descriptions

Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R
Transistor - FET N-Channel 20V 1.2A
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel Enhancement Mode FET SC-59 | Diodes Inc DMN2112SN-7
N-Channel Mosfet, 20V VDS, 8±V VGSDiodes Inc SCT
Mosfet Bvdss: 8V~24V Sc59 T&r 3K
MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V

Product Comparison

The three parts on the right have similar specifications to DMN2112SN-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Resistance

Max Junction Temperature (Tj)

Lead Free

View Compare
DMN2112SN-7

Diodes Incorporated

19 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

500mW Ta

Single

ENHANCEMENT MODE

500mW

10 ns

N-Channel

SWITCHING

100m Ω @ 500mA, 4.5V

1.2V @ 1mA

220pF @ 10V

1.2A Ta

15ns

1.5V 4.5V

±8V

65 ns

75 ns

1.2A

1.2V

8V

0.25Ohm

20V

20V

1.2 V

1.3mm

3.1mm

1.7mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-
DMN2028UVT-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

yes

Active

1 (Unlimited)

-

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

260

30

-

-

-

1.2W Ta

-

-

-

-

N-Channel

-

24m Ω @ 6.2A, 4.5V

1.5V @ 250μA

856pF @ 10V

6.2A Ta

-

2.5V 4.5V

±8V

-

-

6.2A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

8.3nC @ 4.5V

20V

-

-

-

DMN2112SN-7 vs DMN2028UVT-13
DMN2026UVT-13

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

-

-

EAR99

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

1.15W Ta

-

-

-

-

N-Channel

-

24m Ω @ 6.2A, 4.5V

1.5V @ 250μA

887pF @ 10V

6.2A Tc

-

2.5V 4.5V

±10V

-

-

6.2A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

18.4nC @ 8V

20V

-

-

-

DMN2112SN-7 vs DMN2026UVT-13
DMN26D0UT-7

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SOT-523

3

2.012816mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2009

e3

yes

Active

1 (Unlimited)

3

-

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

300mW Ta

Single

ENHANCEMENT MODE

300mW

3.8 ns

N-Channel

SWITCHING

3 Ω @ 100mA, 4.5V

1V @ 250μA

14.1pF @ 15V

230mA Ta

7.9ns

1.2V 4.5V

±10V

15.2 ns

13.4 ns

230mA

1V

10V

-

20V

-

-

900μm

1.7mm

850μm

No SVHC

No

ROHS3 Compliant

-

-

3Ohm

150°C

Lead Free

DMN2112SN-7 vs DMN26D0UT-7