Diodes Incorporated DMN2004TK-7
- Part Number:
- DMN2004TK-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481884-DMN2004TK-7
- Description:
- MOSFET N-CH 20V 0.54A SOT-523
- Datasheet:
- DMN2004TK-7
Diodes Incorporated DMN2004TK-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2004TK-7.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY, LOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max150mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150mW
- Turn On Delay Time8.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs550m Ω @ 540mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 16V
- Current - Continuous Drain (Id) @ 25°C540mA Ta
- Rise Time9.1ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)9.1 ns
- Turn-Off Delay Time51 ns
- Continuous Drain Current (ID)540mA
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)0.54A
- Drain-source On Resistance-Max0.55Ohm
- Drain to Source Breakdown Voltage20V
- Feedback Cap-Max (Crss)20 pF
- Height750μm
- Length1.6mm
- Width800μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN2004TK-7 Overview
A device's maximal input capacitance is 150pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 540mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.54A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 51 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMN2004TK-7 Features
a continuous drain current (ID) of 540mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 51 ns
DMN2004TK-7 Applications
There are a lot of Diodes Incorporated
DMN2004TK-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 150pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 540mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.54A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 51 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
DMN2004TK-7 Features
a continuous drain current (ID) of 540mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 51 ns
DMN2004TK-7 Applications
There are a lot of Diodes Incorporated
DMN2004TK-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN2004TK-7 More Descriptions
Mosfet, N-Ch, 20V, 0.54A, Sot-523 Rohs Compliant: Yes |Diodes Inc. DMN2004TK-7
N-Channel 20 V 550 mO Surface Mount Enhancement Mode Mosfet - SOT-523
Trans MOSFET N-CH 20V 0.54A Automotive 3-Pin SOT-523 T/R
N-Channel 20 V 550 mO Surface Mount Enhancement Mode Mosfet - SOT-523
Trans MOSFET N-CH 20V 0.54A Automotive 3-Pin SOT-523 T/R
The three parts on the right have similar specifications to DMN2004TK-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)ResistanceThreshold VoltageMax Junction Temperature (Tj)Base Part NumberView Compare
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DMN2004TK-714 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJTape & Reel (TR)2010e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY, LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311150mW TaSingleENHANCEMENT MODE150mW8.5 nsN-ChannelSWITCHING550m Ω @ 540mA, 4.5V1V @ 250μA150pF @ 16V540mA Ta9.1ns1.8V 4.5V±8V9.1 ns51 ns540mA8V0.54A0.55Ohm20V20 pF750μm1.6mm800μmNo SVHCNoROHS3 CompliantLead Free-------
-
15 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--26030---1.2W Ta----N-Channel-24m Ω @ 6.2A, 4.5V1.5V @ 250μA856pF @ 10V6.2A Ta-2.5V 4.5V±8V--6.2A----------ROHS3 Compliant-8.3nC @ 4.5V20V----
-
14 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJCut Tape (CT)2009e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311300mW TaSingleENHANCEMENT MODE300mW3.8 nsN-ChannelSWITCHING3 Ω @ 100mA, 4.5V1V @ 250μA14.1pF @ 15V230mA Ta7.9ns1.2V 4.5V±10V15.2 ns13.4 ns230mA10V--20V-900μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free--3Ohm1V150°C-
-
23 WeeksSurface MountSurface Mount6-UDFN Exposed Pad----55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)-EAR99Nickel/Palladium/Gold (Ni/Pd/Au)--MOSFET (Metal Oxide)------1610mW TaSingle--3.6 nsN-Channel-9.5m Ω @ 7A, 4.5V1V @ 250μA2248pF @ 10V11.7A Ta2.6ns1.5V 4.5V±12V13.5 ns21.6 ns11.7A12V---------ROHS3 Compliant-56nC @ 10V20V---DMN2011
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