DMN2004TK-7

Diodes Incorporated DMN2004TK-7

Part Number:
DMN2004TK-7
Manufacturer:
Diodes Incorporated
Ventron No:
2481884-DMN2004TK-7
Description:
MOSFET N-CH 20V 0.54A SOT-523
ECAD Model:
Datasheet:
DMN2004TK-7

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Specifications
Diodes Incorporated DMN2004TK-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2004TK-7.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-523
  • Number of Pins
    3
  • Weight
    2.012816mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY, LOW THRESHOLD
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    150mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    150mW
  • Turn On Delay Time
    8.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    550m Ω @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 16V
  • Current - Continuous Drain (Id) @ 25°C
    540mA Ta
  • Rise Time
    9.1ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    9.1 ns
  • Turn-Off Delay Time
    51 ns
  • Continuous Drain Current (ID)
    540mA
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    0.54A
  • Drain-source On Resistance-Max
    0.55Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Feedback Cap-Max (Crss)
    20 pF
  • Height
    750μm
  • Length
    1.6mm
  • Width
    800μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN2004TK-7 Overview
A device's maximal input capacitance is 150pF @ 16V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 540mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.54A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 51 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

DMN2004TK-7 Features
a continuous drain current (ID) of 540mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 51 ns


DMN2004TK-7 Applications
There are a lot of Diodes Incorporated
DMN2004TK-7 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN2004TK-7 More Descriptions
Mosfet, N-Ch, 20V, 0.54A, Sot-523 Rohs Compliant: Yes |Diodes Inc. DMN2004TK-7
N-Channel 20 V 550 mO Surface Mount Enhancement Mode Mosfet - SOT-523
Trans MOSFET N-CH 20V 0.54A Automotive 3-Pin SOT-523 T/R
Product Comparison
The three parts on the right have similar specifications to DMN2004TK-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Resistance
    Threshold Voltage
    Max Junction Temperature (Tj)
    Base Part Number
    View Compare
  • DMN2004TK-7
    DMN2004TK-7
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY, LOW THRESHOLD
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    150mW Ta
    Single
    ENHANCEMENT MODE
    150mW
    8.5 ns
    N-Channel
    SWITCHING
    550m Ω @ 540mA, 4.5V
    1V @ 250μA
    150pF @ 16V
    540mA Ta
    9.1ns
    1.8V 4.5V
    ±8V
    9.1 ns
    51 ns
    540mA
    8V
    0.54A
    0.55Ohm
    20V
    20 pF
    750μm
    1.6mm
    800μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • DMN2028UVT-13
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    260
    30
    -
    -
    -
    1.2W Ta
    -
    -
    -
    -
    N-Channel
    -
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    856pF @ 10V
    6.2A Ta
    -
    2.5V 4.5V
    ±8V
    -
    -
    6.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8.3nC @ 4.5V
    20V
    -
    -
    -
    -
  • DMN26D0UT-7
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    300mW Ta
    Single
    ENHANCEMENT MODE
    300mW
    3.8 ns
    N-Channel
    SWITCHING
    3 Ω @ 100mA, 4.5V
    1V @ 250μA
    14.1pF @ 15V
    230mA Ta
    7.9ns
    1.2V 4.5V
    ±10V
    15.2 ns
    13.4 ns
    230mA
    10V
    -
    -
    20V
    -
    900μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    3Ohm
    1V
    150°C
    -
  • DMN2011UFDE-7
    23 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    610mW Ta
    Single
    -
    -
    3.6 ns
    N-Channel
    -
    9.5m Ω @ 7A, 4.5V
    1V @ 250μA
    2248pF @ 10V
    11.7A Ta
    2.6ns
    1.5V 4.5V
    ±12V
    13.5 ns
    21.6 ns
    11.7A
    12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    56nC @ 10V
    20V
    -
    -
    -
    DMN2011
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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