Diodes Incorporated DMG9N65CT

DMG9N65CT Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2310pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.A device can conduct a maximum continuous current of [9A] according to its drain current.It is [122 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 39 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

DMG9N65CT Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 122 ns


DMG9N65CT Applications
There are a lot of Diodes Incorporated
DMG9N65CT applications of single MOSFETs transistors.


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Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies