Diodes Incorporated DMG3418L-7
- Part Number:
- DMG3418L-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478968-DMG3418L-7
- Description:
- MOSFET N-CH 30V 4A SOT23
- Datasheet:
- DMG3418L-7
Diodes Incorporated DMG3418L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG3418L-7.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberDMG3418
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.4W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time1.9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs60m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds464.3pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4A Ta
- Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
- Rise Time1.6ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 10V
- Vgs (Max)±12V
- Fall Time (Typ)2 ns
- Turn-Off Delay Time10.3 ns
- Continuous Drain Current (ID)4A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)4A
- Drain-source On Resistance-Max0.06Ohm
- Drain to Source Breakdown Voltage30V
- RoHS StatusROHS3 Compliant
DMG3418L-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 464.3pF @ 15V.This device conducts a continuous drain current (ID) of 4A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 4A.When the device is turned off, a turn-off delay time of 10.3 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 10V volts (2.5V 10V).
DMG3418L-7 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 10.3 ns
DMG3418L-7 Applications
There are a lot of Diodes Incorporated
DMG3418L-7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 464.3pF @ 15V.This device conducts a continuous drain current (ID) of 4A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 4A.When the device is turned off, a turn-off delay time of 10.3 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 10V volts (2.5V 10V).
DMG3418L-7 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 10.3 ns
DMG3418L-7 Applications
There are a lot of Diodes Incorporated
DMG3418L-7 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMG3418L-7 More Descriptions
Single N-Channel 30 V 150 mOhm 5.5 nC 1.4 W Silicon SMT Mosfet - SOT-23
Transistor, MOSFET, N-channel, enhancement mode, 4A, 30V, fast switching, SOT-2 | Diodes Inc DMG3418L-7
Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R
Mosfet, Aec-Q101, N-Ch, 4A, 30V, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Diodes Inc. DMG3418L-7
Transistor, MOSFET, N-channel, enhancement mode, 4A, 30V, fast switching, SOT-2 | Diodes Inc DMG3418L-7
Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R
Mosfet, Aec-Q101, N-Ch, 4A, 30V, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Diodes Inc. DMG3418L-7
The three parts on the right have similar specifications to DMG3418L-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinNumber of PinsSubcategoryPower DissipationREACH SVHCLead FreeView Compare
-
DMG3418L-723 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WING26030DMG3418R-PDSO-G3111.4W TaSingleENHANCEMENT MODE1.9 nsN-ChannelSWITCHING60m Ω @ 4A, 10V1.5V @ 250μA464.3pF @ 15V4A Ta5.5nC @ 4.5V1.6ns2.5V 10V±12V2 ns10.3 ns4A12V4A0.06Ohm30VROHS3 Compliant---------
-
23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WING26030-R-PDSO-G31-780mW Ta-ENHANCEMENT MODE-N-ChannelSWITCHING25m Ω @ 5.8A, 10V2V @ 250μA641pF @ 15V4.2A Ta13.2nC @ 10V-4.5V 10V±20V--4.2A--0.025Ohm-ROHS3 CompliantSINGLE WITH BUILT-IN DIODE30V30V-----
-
23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WING26030-R-PDSO-G3111.4W TaSingleENHANCEMENT MODE1.9 nsN-ChannelSWITCHING60m Ω @ 4A, 10V1.5V @ 250μA464.3pF @ 15V4A Ta5.5nC @ 4.5V1.6ns2.5V 10V±12V2 ns10.3 ns4A12V4A0.06Ohm30VROHS3 Compliant--------
-
15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJDigi-Reel®2012e3Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WING26030--11800mW TaSingleENHANCEMENT MODE8 nsP-ChannelSWITCHING50m Ω @ 4A, 10V1.3V @ 250μA1326pF @ 15V3A Ta25.1nC @ 10V13ns2.5V 10V±12V38 ns71 ns3A12V3A0.05Ohm30VROHS3 Compliant---3Other Transistors1.2WNo SVHCLead Free
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
29 January 2024
TQP3M9028 RF Amplifier Alternatives, Market Trend, Applications and Other Details
Ⅰ. TQP3M9028 descriptionⅡ. Manufacturer of TQP3M9028Ⅲ. Specifications of TQP3M9028Ⅳ. Market trend of TQP3M9028Ⅴ. How to choose TQP3M9028?Ⅵ. Absolute maximum ratings of TQP3M9028Ⅶ. Where is TQP3M9028 used?TQP3M9028 is a... -
30 January 2024
AD7606BSTZ Converter Technical Parameters, Characteristics, Working Principle and Package
Ⅰ. Overview of AD7606BSTZⅡ. Technical parameters of AD7606BSTZⅢ. Characteristics of AD7606BSTZⅣ. Absolute maximum ratings of AD7606BSTZⅤ. How does AD7606BSTZ work?Ⅵ. Package of AD7606BSTZⅦ. What are the applications of... -
30 January 2024
LSM6DS3TR Alternatives, Features, Specifications, LSM6DS3TR vs LSM6DS3 and Applications
Ⅰ. Introduction to LSM6DS3TRⅡ. What are the features of LSM6DS3TR?Ⅲ. Absolute maximum ratings of LSM6DS3TRⅣ. Specifications of LSM6DS3TRⅤ. What are the advantages and disadvantages of LSM6DS3TR?Ⅵ. What is... -
31 January 2024
ISO1050DUBR Characteristics, Application Fields, Layout Guidelines and More
Ⅰ. What is a CAN transceiver?Ⅱ. Overview of ISO1050DUBRⅢ. Technical parameters of ISO1050DUBRⅣ. Characteristics of ISO1050DUBRⅤ. ISO1050DUBR symbol, footprint and pin configurationⅥ. Application fields of ISO1050DUBRⅦ. Layout guidelines...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.