DMG3418L-7

Diodes Incorporated DMG3418L-7

Part Number:
DMG3418L-7
Manufacturer:
Diodes Incorporated
Ventron No:
2478968-DMG3418L-7
Description:
MOSFET N-CH 30V 4A SOT23
ECAD Model:
Datasheet:
DMG3418L-7

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Specifications
Diodes Incorporated DMG3418L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG3418L-7.
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    DMG3418
  • JESD-30 Code
    R-PDSO-G3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.4W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    1.9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    464.3pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.5nC @ 4.5V
  • Rise Time
    1.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 10V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    2 ns
  • Turn-Off Delay Time
    10.3 ns
  • Continuous Drain Current (ID)
    4A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain-source On Resistance-Max
    0.06Ohm
  • Drain to Source Breakdown Voltage
    30V
  • RoHS Status
    ROHS3 Compliant
Description
DMG3418L-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 464.3pF @ 15V.This device conducts a continuous drain current (ID) of 4A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 4A.When the device is turned off, a turn-off delay time of 10.3 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 10V volts (2.5V 10V).

DMG3418L-7 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 10.3 ns


DMG3418L-7 Applications
There are a lot of Diodes Incorporated
DMG3418L-7 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMG3418L-7 More Descriptions
Single N-Channel 30 V 150 mOhm 5.5 nC 1.4 W Silicon SMT Mosfet - SOT-23
Transistor, MOSFET, N-channel, enhancement mode, 4A, 30V, fast switching, SOT-2 | Diodes Inc DMG3418L-7
Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R
Mosfet, Aec-Q101, N-Ch, 4A, 30V, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Diodes Inc. DMG3418L-7
Product Comparison
The three parts on the right have similar specifications to DMG3418L-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    RoHS Status
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Number of Pins
    Subcategory
    Power Dissipation
    REACH SVHC
    Lead Free
    View Compare
  • DMG3418L-7
    DMG3418L-7
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    DMG3418
    R-PDSO-G3
    1
    1
    1.4W Ta
    Single
    ENHANCEMENT MODE
    1.9 ns
    N-Channel
    SWITCHING
    60m Ω @ 4A, 10V
    1.5V @ 250μA
    464.3pF @ 15V
    4A Ta
    5.5nC @ 4.5V
    1.6ns
    2.5V 10V
    ±12V
    2 ns
    10.3 ns
    4A
    12V
    4A
    0.06Ohm
    30V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG3404L-13
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    -
    R-PDSO-G3
    1
    -
    780mW Ta
    -
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    25m Ω @ 5.8A, 10V
    2V @ 250μA
    641pF @ 15V
    4.2A Ta
    13.2nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    4.2A
    -
    -
    0.025Ohm
    -
    ROHS3 Compliant
    SINGLE WITH BUILT-IN DIODE
    30V
    30V
    -
    -
    -
    -
    -
  • DMG3418L-13
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    -
    R-PDSO-G3
    1
    1
    1.4W Ta
    Single
    ENHANCEMENT MODE
    1.9 ns
    N-Channel
    SWITCHING
    60m Ω @ 4A, 10V
    1.5V @ 250μA
    464.3pF @ 15V
    4A Ta
    5.5nC @ 4.5V
    1.6ns
    2.5V 10V
    ±12V
    2 ns
    10.3 ns
    4A
    12V
    4A
    0.06Ohm
    30V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG3401LSN-7
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    2012
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    -
    -
    1
    1
    800mW Ta
    Single
    ENHANCEMENT MODE
    8 ns
    P-Channel
    SWITCHING
    50m Ω @ 4A, 10V
    1.3V @ 250μA
    1326pF @ 15V
    3A Ta
    25.1nC @ 10V
    13ns
    2.5V 10V
    ±12V
    38 ns
    71 ns
    3A
    12V
    3A
    0.05Ohm
    30V
    ROHS3 Compliant
    -
    -
    -
    3
    Other Transistors
    1.2W
    No SVHC
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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