Diodes Incorporated DMG1026UV-7

Name: DMG1026UV-7
Brand: Diodes Incorporated
SKU: 2847600-DMG1026UV-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG1026UV-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2847600-DMG1026UV-7

Description:: MOSFET 2N-CH 60V 0.41A SOT-563

ECAD Model:

Datasheet:: DMG1026UV-7

Specifications

Diodes Incorporated DMG1026UV-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1026UV-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
580mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMG1026
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
6.5W
Turn On Delay Time
3.4 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.8 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
32pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
0.45nC @ 10V
Rise Time
3.4ns
Drain to Source Voltage (Vdss)
60V
Fall Time (Typ)
16.3 ns
Turn-Off Delay Time
26.4 ns
Continuous Drain Current (ID)
410mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.38A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Diodes Inc. Transistors - FETs, MOSFETs - Arrays DMG1026UV-7 are a series of P-Channel MOSFETs designed for use in a variety of applications. These transistors feature a BVDSS (Breakdown Voltage) of 41V-60V, a 1V-60V gate-source voltage, and a SOT563 package. They also have a 3KV ESD rating, making them suitable for use in high-voltage applications.

The DMG1026UV-7 transistors are designed for use in a variety of applications, including power management, motor control, and switching applications. They are also suitable for use in automotive, industrial, and consumer electronics applications. The transistors are designed to provide high-efficiency operation, low power consumption, and low on-resistance. They are also designed to provide excellent thermal performance and high-frequency operation.

The DMG1026UV-7 transistors are designed to provide reliable operation in a wide range of operating conditions. They are also designed to provide excellent ESD protection and high-temperature operation. The transistors are also designed to provide excellent noise immunity and low-power consumption.

The DMG1026UV-7 transistors are designed to provide reliable operation in a wide range of operating conditions. They are also designed to provide excellent ESD protection and high-temperature operation. The transistors are also designed to provide excellent noise immunity and low-power consumption.

DMG1026UV-7 More Descriptions

Transistor MOSFET Array Dual N-CH 60V 440mA 6-Pin SOT-563 T/RAvnet Japan
Mosfet Bvdss: 41V~60V Sot563 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG1026UV-7
MOSFET, DUAL N-CH, 60V, 0.41A, SOT563; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:410mA; Source Voltage Vds:60V; On
MOSFET, DUAL N-CH, 60V, 0.41A, SOT563; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 410mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 580mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification