Diodes Incorporated DMG1023UV-7

Name: DMG1023UV-7
Brand: Diodes Incorporated
SKU: 2474685-DMG1023UV-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG1023UV-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2474685-DMG1023UV-7

Description:: MOSFET 2P-CH 20V 1.03A SOT563

ECAD Model:

Datasheet:: DMG1023UV-7

Specifications

Diodes Incorporated DMG1023UV-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1023UV-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
750mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Subcategory
Other Transistors
Max Power Dissipation
530mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Base Part Number
DMG1023UV
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
530mW
Turn On Delay Time
5.1 ns
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
750m Ω @ 430mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
59.76pF @ 16V
Gate Charge (Qg) (Max) @ Vgs
0.62nC @ 4.5V
Rise Time
8.1ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
20.7 ns
Turn-Off Delay Time
28.4 ns
Continuous Drain Current (ID)
1.03A
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
6V
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMG1023UV-7 Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet DMG1023UV-7 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DMG1023UV-7. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DMG1023UV-7 More Descriptions

Transistor MOSFET Array Dual P-CH 20V 1.03A 6-Pin SOT-563 T/RAvnet Japan
DMG1023UV Series 20 V 0.75 Ohm Dual P-Channel Enhancement Mode Mosfet - SOT-563
MOSFET, DUAL P CH, -20V, SOT-563; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -1.03A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 530mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Certification