Diodes Incorporated DMG1024UV-7

Name: DMG1024UV-7
Brand: Diodes Incorporated
SKU: 3069670-DMG1024UV-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMG1024UV-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3069670-DMG1024UV-7

Description:: MOSFET 2N-CH 20V 1.38A SOT563

ECAD Model:

Datasheet:: DMG1024UV-7

Specifications

Diodes Incorporated DMG1024UV-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG1024UV-7.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Weight
3.005049mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
10Ohm
Terminal Finish
Matte Tin (Sn)
Additional Feature
LOW THRESHOLD
Subcategory
FET General Purpose Power
Max Power Dissipation
530mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DMG1024UV
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
530mW
Turn On Delay Time
5.1 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
450m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 16V
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V
Rise Time
7.4ns
Drain to Source Voltage (Vdss)
20V
Fall Time (Typ)
12.3 ns
Turn-Off Delay Time
26.7 ns
Continuous Drain Current (ID)
1.38A
Gate to Source Voltage (Vgs)
6V
Drain Current-Max (Abs) (ID)
1.39A
Drain to Source Breakdown Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.25mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description:

The Diodes Inc. DMG1024UV-7 is a Trans MOSFET N-Channel 20V 1.38A Automotive 6-Pin SOT-563 T/R. It is designed for use in automotive applications and is capable of operating at temperatures ranging from -55°C to 150°C. It features a low on-resistance of 0.0085Ω and a low gate charge of 4.5nC.

Features:

• Low on-resistance of 0.0085Ω
• Low gate charge of 4.5nC
• Operating temperature range of -55°C to 150°C
• Automotive grade
• 6-Pin SOT-563 T/R package

Applications:

The Diodes Inc. DMG1024UV-7 is suitable for use in automotive applications such as powertrain, body electronics, and safety systems. It can be used in applications such as DC-DC converters, motor control, and power management.

DMG1024UV-7 More Descriptions

Transistor MOSFET Array Dual N-CH 20V 1.38A 6-Pin SOT-563 T/R
Mosfet Bvdss: 8V~24V Sot563 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMG1024UV-7
Dual N-Channel 20 V 530 mW 736.6 pC Silicon Surface Mount Mosfet - SOT-563

Certification