Cree/Wolfspeed C3M0065090J

Name: C3M0065090J
Brand: Cree/Wolfspeed
SKU: 2848567-C3M0065090J
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: C3M0065090J

Manufacturer:: Cree/Wolfspeed

Ventron No:: 2848567-C3M0065090J

Description:: MOSFET N-CH 900V 35A D2PAK-7

ECAD Model:

Datasheet:: C3M0065090J

Specifications

Cree/Wolfspeed C3M0065090J technical specifications, attributes, parameters and parts with similar specifications to Cree/Wolfspeed C3M0065090J.

Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-8, D2Pak (7 Leads Tab), TO-263CA
Number of Pins
7
Supplier Device Package
D2PAK-7
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
C3M™
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Technology
SiCFET (Silicon Carbide)
Power Dissipation-Max
113W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.1V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds
660pF @ 600V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 15V
Drain to Source Voltage (Vdss)
900V
Drive Voltage (Max Rds On,Min Rds On)
15V
Vgs (Max)
19V, -8V
Continuous Drain Current (ID)
35A
Threshold Voltage
2.1V
Drain to Source Resistance
65mOhm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant

Description

C3M0065090J Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 660pF @ 600V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 65mOhm.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.1V.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (15V).

C3M0065090J Features
a continuous drain current (ID) of 35A
single MOSFETs transistor is 65mOhm
a threshold voltage of 2.1V
a 900V drain to source voltage (Vdss)

C3M0065090J Applications
There are a lot of Cree/Wolfspeed
C3M0065090J applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

C3M0065090J More Descriptions

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement ModeWolfspeed
Trans MOSFET N-CH SiC 900V 35A 8-Pin(7 Tab) D2PAK Tube
MOSFET, N-CH, 900V, 35A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.1V; MSL:- RoHS Compliant: Yes
Power Field-Effect Transistor, 35A I(D), 900V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to C3M0065090J.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

Drain to Source Resistance

REACH SVHC

RoHS Status

Surface Mount

Number of Terminations

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
C3M0065090J

Cree/Wolfspeed

16 Weeks

Surface Mount

TO-263-8, D2Pak (7 Leads Tab), TO-263CA

7

D2PAK-7

-55°C~150°C TJ

Tube

C3M™

2006

Active

1 (Unlimited)

150°C

SiCFET (Silicon Carbide)

113W Tc

N-Channel

78mOhm @ 20A, 15V

2.1V @ 5mA

660pF @ 600V

35A Tc

30nC @ 15V

900V

15V

19V, -8V

35A

2.1V

65mOhm

No SVHC

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
C3M0065090J-TR

Cree/Wolfspeed

23 Weeks

Surface Mount

TO-263-8, D2Pak (7 Leads Tab), TO-263CA

7

D2PAK-7

-55°C~150°C TJ

Tape & Reel (TR)

C3M™

2015

Active

3 (168 Hours)

-

SiCFET (Silicon Carbide)

113W Tc

N-Channel

78mOhm @ 20A, 15V

2.1V @ 5mA

660pF @ 600V

35A Tc

30nC @ 15V

900V

15V

19V, -8V

-

-

65mOhm

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

C3M0065090J vs C3M0065090J-TR
C3M0120090D

Cree/Wolfspeed

16 Weeks

Through Hole

TO-247-3

3

TO-247-3

-55°C~150°C TJ

Tube

C3M™

2005

Active

1 (Unlimited)

150°C

SiCFET (Silicon Carbide)

97W Tc

N-Channel

155mOhm @ 15A, 15V

3.5V @ 3mA

350pF @ 600V

23A Tc

17.3nC @ 15V

900V

15V

18V, -8V

23A

2.1V

120mOhm

No SVHC

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

C3M0065090J vs C3M0120090D
C3M0120100K

Cree/Wolfspeed

16 Weeks

Through Hole

TO-247-4

-

-

-55°C~150°C TJ

Tube

C3M™

2016

Active

1 (Unlimited)

-

SiCFET (Silicon Carbide)

83W Tc

N-Channel

155m Ω @ 15A, 15V

3.5V @ 3mA

350pF @ 600V

22A Tc

21.5nC @ 15V

1000V

15V

±15V

-

-

-

-

RoHS Compliant

NO

4

SINGLE

NOT SPECIFIED

NOT SPECIFIED

IEC-60747-8-4

R-PSFM-T4

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

22A

0.155Ohm

50A

1000V

C3M0065090J vs C3M0120100K