ON Semiconductor BVSS123LT1G

Name: BVSS123LT1G
Brand: ON Semiconductor
SKU: 3070616-BVSS123LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BVSS123LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 3070616-BVSS123LT1G

Description:: MOSFET N-CH 100V 170MA SOT-23-3

ECAD Model:

Datasheet:: BVSS123LT1G

Specifications

ON Semiconductor BVSS123LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BVSS123LT1G.

Lifecycle Status
ACTIVE (Last Updated: 11 hours ago)
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Pin Count
3
Number of Elements
1
Power Dissipation-Max
225mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
225mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
170mA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
6Ohm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BVSS123LT1G Description
This P-Channel MOSFET has been adjusted for rDS(0N), switching performance, and resilience using Fairchild Semiconductor's revolutionary PowerTrench? technology. These devices are designed to provide a high level of dv/dt capabilities as well as a significant reduction in on-resistance for the most demanding applications.

BVSS123LT1G Features
? BVSS is a prefix for automotive and other applications that require a high level of security.
? Requirements for Site and Control Changes; AEC?Q101
? PPAP-qualified and PPAP-ready
? These devices are RoHS compliant and free of lead.

BVSS123LT1G Applications
Switching applications

BVSS123LT1G More Descriptions

N-Channel MOSFET, Small Signal, 100V, 170mA, 6Ω Automotive version of BSS123L
Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23
BVSS123 Series 100 V 0.17 A 6 Ohm Single N-Channel MOSFET - SOT-23
Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R
MOSFET, AEC-Q101, N-CH, 100V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.6V; Power Dissipation Pd: 225mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Certification