ON Semiconductor BUL146
- Part Number:
- BUL146
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2468219-BUL146
- Description:
- TRANS NPN 400V 6A TO-220AB
- Datasheet:
- BUL146
ON Semiconductor BUL146 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BUL146.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- SeriesSWITCHMODE™
- Published2009
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
- SubcategoryOther Transistors
- Voltage - Rated DC400V
- Max Power Dissipation100W
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberBUL146
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product14MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 500mA 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic700mV @ 600mA, 3A
- Collector Emitter Breakdown Voltage400V
- Current - Collector (Ic) (Max)6A
- Transition Frequency14MHz
- Collector Emitter Saturation Voltage930mV
- Collector Base Voltage (VCBO)700V
- Emitter Base Voltage (VEBO)9V
- hFE Min5
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BUL146 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 930mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 600mA, 3A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 14MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
BUL146 Features
the DC current gain for this device is 14 @ 500mA 5V
a collector emitter saturation voltage of 930mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 14MHz
BUL146 Applications
There are a lot of ON Semiconductor
BUL146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 930mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 600mA, 3A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 14MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
BUL146 Features
the DC current gain for this device is 14 @ 500mA 5V
a collector emitter saturation voltage of 930mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 14MHz
BUL146 Applications
There are a lot of ON Semiconductor
BUL146 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL146 More Descriptions
Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS NPN 400V 6A TO-220AB
TRANS NPN 400V 6A TO220
TRANS NPN 400V 6A TO-220AB
TRANS NPN 400V 6A TO220
The three parts on the right have similar specifications to BUL146.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeLifecycle StatusFactory Lead TimeContact PlatingTerminal PositionConfigurationPower DissipationREACH SVHCRadiation HardeningSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Pbfree CodeView Compare
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BUL146Through HoleThrough HoleTO-220-33SILICON-65°C~150°C TJTubeSWITCHMODE™2009e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)LEADFORM OPTIONS ARE AVAILABLEOther Transistors400V100W240not_compliant8A30BUL1463Not Qualified1SingleCOLLECTORSWITCHING14MHzNPNNPN700mV6A14 @ 500mA 5V100μATO-220AB700mV @ 600mA, 3A400V6A14MHz930mV700V9V5Non-RoHS CompliantContains Lead-------------
-
Through HoleThrough HoleTO-220-33SILICON150°C TJTube--e3Active1 (Unlimited)3EAR99--Other Transistors-70W----BUL11023-1-COLLECTORSWITCHING-NPNNPN450V4A12 @ 2A 5V100μATO-220AB1.5V @ 400mA, 2A450V----12V-ROHS3 Compliant-ACTIVE (Last Updated: 8 months ago)8 WeeksTinSINGLESINGLE70WNo SVHCNo----
-
Through HoleThrough HoleTO-220-3--150°C TJTube---Obsolete1 (Unlimited)------70W----BUL128--------NPN500mV4A14 @ 2A 5V200μA-500mV @ 1A, 4A400V4A-----ROHS3 Compliant---------TO-220AB70W400V-
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Through HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTube--e3Obsolete1 (Unlimited)3EAR99--Other Transistors-31W----BUL1283-1SingleISOLATEDSWITCHING-NPNNPN400V4A14 @ 2A 5V100μATO-220AB500mV @ 1A, 4A400V---700V9V10ROHS3 Compliant---Tin--31WNo SVHCNo---yes
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