STMicroelectronics BUL128-K
- Part Number:
- BUL128-K
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2469128-BUL128-K
- Description:
- TRANS NPN 400V 4A TO-220
- Datasheet:
- BUL128
STMicroelectronics BUL128-K technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL128-K.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Operating Temperature150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation70W
- Base Part NumberBUL128
- Power - Max70W
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 2A 5V
- Current - Collector Cutoff (Max)200μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 1A, 4A
- Collector Emitter Breakdown Voltage400V
- Voltage - Collector Emitter Breakdown (Max)400V
- Current - Collector (Ic) (Max)4A
- RoHS StatusROHS3 Compliant
BUL128-K Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 2A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 4A volts.
BUL128-K Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the supplier device package of TO-220AB
BUL128-K Applications
There are a lot of STMicroelectronics
BUL128-K applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 14 @ 2A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 4A volts.
BUL128-K Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the supplier device package of TO-220AB
BUL128-K Applications
There are a lot of STMicroelectronics
BUL128-K applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL128-K More Descriptions
Motor / Motion / Ignition Controllers & Drivers HI VLTG FAST SWITCH NPN PWR TRANSISTOR
TRANS NPN 400V 4A TO-220
CAP CER 0.33UF 50V X7R 1206
TRANS NPN 400V 4A TO-220
CAP CER 0.33UF 50V X7R 1206
The three parts on the right have similar specifications to BUL128-K.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationBase Part NumberPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusLifecycle StatusFactory Lead TimeContact PlatingNumber of PinsTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCCurrent RatingPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminal FinishPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusCase ConnectionView Compare
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BUL128-KThrough HoleThrough HoleTO-220-3TO-220AB150°C TJTubeObsolete1 (Unlimited)70WBUL12870WNPN500mV4A14 @ 2A 5V200μA500mV @ 1A, 4A400V400V4AROHS3 Compliant-------------------------------------
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Through HoleThrough HoleTO-220-3-150°C TJTubeActive1 (Unlimited)80WBUL138-NPN400V5A8 @ 2A 5V250μA700mV @ 1A, 5A400V--ROHS3 CompliantACTIVE (Last Updated: 8 months ago)8 WeeksTin3SILICONe33EAR99HIGH RELIABILITYOther Transistors400V5A31Single80WSWITCHINGNPNTO-220AB1V800V9V81 V9.15mm10.4mm4.6mmNo SVHCNoLead Free------
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Through HoleThrough HoleTO-220-3-150°C TJTubeObsolete1 (Unlimited)80WBUL140-NPN650V3A15 @ 400mA 3V1mA2.5V @ 50mA, 500mA650V--ROHS3 Compliant---3SILICONe33EAR99-Other Transistors650V3A31Single80WSWITCHINGNPNTO-220AB-1.4kV11V15----No SVHCNoLead FreeTin (Sn)-----
-
Through HoleThrough HoleTO-220-3 Full Pack-150°C TJTubeObsolete1 (Unlimited)33WBUL138-NPN400V5A8 @ 2A 5V250μA700mV @ 1A, 5A400V--ROHS3 Compliant---3SILICONe33EAR99-Other Transistors400V5A31Single33WSWITCHINGNPN--800V9V8------Lead FreeMatte Tin (Sn)NOT SPECIFIEDnot_compliantNOT SPECIFIEDNot QualifiedISOLATED
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