STMicroelectronics BUL128FP
- Part Number:
- BUL128FP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2469107-BUL128FP
- Description:
- TRANS NPN 400V 4A TO-220FP
- Datasheet:
- BUL128FP
STMicroelectronics BUL128FP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL128FP.
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation31W
- Base Part NumberBUL128
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation31W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 2A 5V
- Current - Collector Cutoff (Max)100μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic500mV @ 1A, 4A
- Collector Emitter Breakdown Voltage400V
- Collector Base Voltage (VCBO)700V
- Emitter Base Voltage (VEBO)9V
- hFE Min10
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BUL128FP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
BUL128FP Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128FP Applications
There are a lot of STMicroelectronics
BUL128FP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1A, 4A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.
BUL128FP Features
the DC current gain for this device is 14 @ 2A 5V
the vce saturation(Max) is 500mV @ 1A, 4A
the emitter base voltage is kept at 9V
BUL128FP Applications
There are a lot of STMicroelectronics
BUL128FP applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL128FP More Descriptions
Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 4A 3-Pin(3 Tab) TO-220FP Tube
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220FP; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:400V; Current Ic Continuous a Max:4A; Voltage, Vce Sat Max:1.5V; Power Dissipation:31W; Min Hfe:14; Case ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220FP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 31W; DC Collector Current: 4A; DC Current Gain hFE: 15hFE; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 1.5V; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2A; Full Power Rating Temperature: 25°C; Hfe Min: 14; No. of Transistors: 1; Power Dissipation Ptot Max: 31W; Termination Type: Through Hole; Voltage Vcbo: 400V
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 4A 3-Pin(3 Tab) TO-220FP Tube
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220FP; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:400V; Current Ic Continuous a Max:4A; Voltage, Vce Sat Max:1.5V; Power Dissipation:31W; Min Hfe:14; Case ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220FP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 31W; DC Collector Current: 4A; DC Current Gain hFE: 15hFE; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 1.5V; Continuous Collector Current Ic Max: 4A; Current Ic Continuous a Max: 4A; Current Ic hFE: 2A; Full Power Rating Temperature: 25°C; Hfe Min: 14; No. of Transistors: 1; Power Dissipation Ptot Max: 31W; Termination Type: Through Hole; Voltage Vcbo: 400V
The three parts on the right have similar specifications to BUL128FP.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusTerminal FinishVoltage - Rated DCCurrent RatingLead FreePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusSurface MountSeriesAdditional FeatureTerminal PositionJESD-30 CodeConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionView Compare
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BUL128FPTinThrough HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99Other Transistors31WBUL12831Single31WISOLATEDSWITCHINGNPNNPN400V4A14 @ 2A 5V100μATO-220AB500mV @ 1A, 4A400V700V9V10No SVHCNoROHS3 Compliant--------------------
-
-Through HoleThrough HoleTO-220-33SILICON150°C TJTubee3-Obsolete1 (Unlimited)3EAR99Other Transistors80WBUL14031Single80W-SWITCHINGNPNNPN650V3A15 @ 400mA 3V1mATO-220AB2.5V @ 50mA, 500mA650V1.4kV11V15No SVHCNoROHS3 CompliantTin (Sn)650V3ALead Free---------------
-
-Through HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubee3-Obsolete1 (Unlimited)3EAR99Other Transistors33WBUL13831Single33WISOLATEDSWITCHINGNPNNPN400V5A8 @ 2A 5V250μA-700mV @ 1A, 5A400V800V9V8--ROHS3 CompliantMatte Tin (Sn)400V5ALead FreeNOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified-----------
-
--Through HoleTO-220-3-SILICON-65°C~150°C TJTubee3yesObsolete1 (Unlimited)3----31--COLLECTORSWITCHINGNPNNPN--14 @ 500mA 5V100μATO-220AB700mV @ 600mA, 3A------ROHS3 CompliantMATTE TIN---260-40COMMERCIALNOSWITCHMODE™LEADFORM OPTIONS ARE AVAILABLESINGLER-PSFM-T3SINGLE100W400V6A14MHz14MHz
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