BUL1102E

STMicroelectronics BUL1102E

Part Number:
BUL1102E
Manufacturer:
STMicroelectronics
Ventron No:
2845668-BUL1102E
Description:
TRANS NPN 450V 4A TO-220
ECAD Model:
Datasheet:
BUL1102E

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics BUL1102E technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL1102E.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    70W
  • Terminal Position
    SINGLE
  • Base Part Number
    BUL1102
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    70W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    450V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    12 @ 2A 5V
  • Current - Collector Cutoff (Max)
    100μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 400mA, 2A
  • Collector Emitter Breakdown Voltage
    450V
  • Emitter Base Voltage (VEBO)
    12V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BUL1102E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 12 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 400mA, 2A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.Collector current can be as low as 4A volts at its maximum.

BUL1102E Features
the DC current gain for this device is 12 @ 2A 5V
the vce saturation(Max) is 1.5V @ 400mA, 2A
the emitter base voltage is kept at 12V


BUL1102E Applications
There are a lot of STMicroelectronics
BUL1102E applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BUL1102E More Descriptions
Bipolar Transistors - BJT High voltage fast switching NPN power transistor
Power Bipolar Transistor, 4A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 450V 4A 3-Pin(3 Tab) TO-220 Tube
Power Bipolar, NPN, 1.5V, 400mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 450V; Transition Frequency ft: -; Power Dissipation Pd: 70W; DC Collector Current: 2A; DC Current Gain hFE: 35hFE; Transistor Case Style: TO
Power Field-Effect Transistor, 100A I(D), 60V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Transistor, Npn, To-220; Transistor Polarity:Npn; Collector Emitter Voltage Max:450V; Continuous Collector Current:2A; Power Dissipation:70W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Msl:- Rohs Compliant: Yes |Stmicroelectronics BUL1102E
Product Comparison
The three parts on the right have similar specifications to BUL1102E.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Base Part Number
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Emitter Base Voltage (VEBO)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    hFE Min
    VCEsat-Max
    Height
    Length
    Width
    Lead Free
    Pbfree Code
    Series
    Published
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Gain Bandwidth Product
    Current - Collector (Ic) (Max)
    Transition Frequency
    View Compare
  • BUL1102E
    BUL1102E
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    70W
    SINGLE
    BUL1102
    3
    1
    SINGLE
    70W
    COLLECTOR
    SWITCHING
    NPN
    NPN
    450V
    4A
    12 @ 2A 5V
    100μA
    TO-220AB
    1.5V @ 400mA, 2A
    450V
    12V
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUL138
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    80W
    -
    BUL138
    3
    1
    -
    80W
    -
    SWITCHING
    NPN
    NPN
    400V
    5A
    8 @ 2A 5V
    250μA
    TO-220AB
    700mV @ 1A, 5A
    400V
    9V
    No SVHC
    No
    ROHS3 Compliant
    HIGH RELIABILITY
    400V
    5A
    Single
    1V
    800V
    8
    1 V
    9.15mm
    10.4mm
    4.6mm
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUL128FP
    -
    -
    Tin
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    150°C TJ
    Tube
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    31W
    -
    BUL128
    3
    1
    -
    31W
    ISOLATED
    SWITCHING
    NPN
    NPN
    400V
    4A
    14 @ 2A 5V
    100μA
    TO-220AB
    500mV @ 1A, 4A
    400V
    9V
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    Single
    -
    700V
    10
    -
    -
    -
    -
    -
    yes
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUL146F
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -65°C~150°C TJ
    Tube
    e0
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    40W
    -
    BUL146
    3
    1
    -
    -
    ISOLATED
    SWITCHING
    NPN
    NPN
    700mV
    6A
    14 @ 500mA 5V
    100μA
    TO-220AB
    700mV @ 600mA, 3A
    400V
    9V
    -
    -
    Non-RoHS Compliant
    UL RECOGNIZED
    400V
    8A
    Single
    930mV
    700V
    14
    -
    -
    -
    -
    Contains Lead
    no
    SWITCHMODE™
    2009
    Tin/Lead (Sn/Pb)
    240
    not_compliant
    30
    Not Qualified
    14MHz
    6A
    14MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 17 January 2024

    DS18B20 Digital Temperature Sensor Structure, Features, Applications and More

    Ⅰ. What is DS18B20?Ⅱ. Internal structure of DS18B20Ⅲ. Features of DS18B20 sensorⅣ. How does DS18B20 work?Ⅴ. Symbol, footprint and pin configuration of DS18B20Ⅵ. Driving principle of DS18B20Ⅶ. Where...
  • 18 January 2024

    What is the BTN8982TA Bridge and How Does it Work?

    Ⅰ. Introduction to BTN8982TAⅡ. Block diagram of BTN8982TAⅢ. Specifications of BTN8982TAⅣ. Working principle of BTN8982TAⅤ. BTN8982TA symbol, footprint and pin configurationⅥ. Features of BTN8982TAⅦ. Application fields of BTN8982TABTN8982TA...
  • 18 January 2024

    TPS51200DRCR: Advanced Regulator Solution for DDR Termination

    Ⅰ. Overview of TPS51200DRCRⅡ. Technical parameters of TPS51200DRCRⅢ. What are the advantages of TPS51200DRCR?Ⅳ. Absolute maximum ratings of TPS51200DRCRⅤ. How to use TPS51200DRCR?Ⅵ. Where is TPS51200DRCR used?Ⅶ. TPS51200DRCR...
  • 19 January 2024

    TXB0104PWR Alternatives, Package, Specifications and Applications

    Ⅰ. TXB0104PWR overviewⅡ. Operating principle of TXB0104PWRⅢ. Package of TXB0104PWRⅣ. Specifications of TXB0104PWRⅤ. How to use TXB0104PWR?Ⅵ. What are the applications of TXB0104PWR?Ⅶ. How does TXB0104PWR realize automatic...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.