Nexperia USA Inc. BUK9Y21-40E,115

Name: BUK9Y21-40E,115
Brand: Nexperia USA Inc.
SKU: 2478586-BUK9Y21-40E,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9Y21-40E,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478586-BUK9Y21-40E,115

Description:: MOSFET N-CH 40V LFPAK

ECAD Model:

Datasheet:: BUK9Y21-40E,115

Specifications

Nexperia USA Inc. BUK9Y21-40E,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9Y21-40E,115.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
YES
Number of Pins
4
Material
Metal
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Tin (Sn)
Color
Black, Clear
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
6.2 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
17m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
824pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
7nC @ 5V
Rise Time
9.7ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±10V
Fall Time (Typ)
8.2 ns
Turn-Off Delay Time
10.5 ns
Continuous Drain Current (ID)
33A
JEDEC-95 Code
MO-235
Gate to Source Voltage (Vgs)
15V
Max Dual Supply Voltage
40V
Drain to Source Breakdown Voltage
40V
Diameter
15.875mm
Height
15.875mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUK9Y21-40E,115 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 824pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 33A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [10.5 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 6.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (5V).

BUK9Y21-40E,115 Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 10.5 ns

BUK9Y21-40E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y21-40E,115 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

BUK9Y21-40E,115 More Descriptions

BUK9Y21-40E - N-channel 40 V, 21 mΩ logic level MOSFET in LFPAK56
BUK9Y21 Series 40 V 21 mOhm SMT N-Channel Logic Level MOSFET - SOT-669
Trans MOSFET N-CH 40V 33A Automotive 5-Pin(4 Tab) LFPAK T/R
Mosfet, N-Ch, 40V, 33A, Lfpak; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipationrohs Compliant: Yes |Nexperia BUK9Y21-40E,115

Product Comparison

The three parts on the right have similar specifications to BUK9Y21-40E,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Color

Additional Feature

Technology

Terminal Form

Reach Compliance Code

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Diameter

Height

RoHS Status

Lead Free

Transistor Element Material

ECCN Code

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
BUK9Y21-40E,115

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

YES

4

Metal

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2013

e3

Active

1 (Unlimited)

4

Tin (Sn)

Black, Clear

AVALANCHE RATED

MOSFET (Metal Oxide)

GULL WING

not_compliant

4

1

1

45W Tc

Single

ENHANCEMENT MODE

DRAIN

6.2 ns

N-Channel

SWITCHING

17m Ω @ 10A, 10V

2.1V @ 1mA

824pF @ 25V

33A Tc

7nC @ 5V

9.7ns

5V

±10V

8.2 ns

10.5 ns

33A

MO-235

15V

40V

40V

15.875mm

15.875mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9509-75A,127

NXP USA Inc.

-

Through Hole

TO-220-3

NO

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

2008

e3

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

3

1

-

230W Tc

-

ENHANCEMENT MODE

DRAIN

-

N-Channel

SWITCHING

8.5m Ω @ 25A, 10V

2V @ 1mA

8840pF @ 25V

75A Tj

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

-

-

-

ROHS3 Compliant

-

SILICON

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

75V

75A

0.00995Ohm

440A

75V

562 mJ

BUK9Y21-40E,115 vs BUK9509-75A,127
BUK9575-100A,127

Nexperia USA Inc.

-

Through Hole

TO-220-3

NO

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

compliant

3

1

-

99W Tc

-

ENHANCEMENT MODE

DRAIN

-

N-Channel

SWITCHING

72m Ω @ 10A, 10V

2V @ 1mA

1704pF @ 25V

23A Tc

-

-

4.5V 10V

±15V

-

-

-

TO-220AB

-

-

-

-

-

-

-

SILICON

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

100V

23A

0.084Ohm

91A

100V

100 mJ

BUK9Y21-40E,115 vs BUK9575-100A,127
BUK9520-100A,127

Nexperia USA Inc.

-

Through Hole

TO-220-3

NO

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

compliant

3

1

-

200W Tc

-

ENHANCEMENT MODE

DRAIN

-

N-Channel

SWITCHING

19m Ω @ 25A, 10V

2V @ 1mA

6385pF @ 25V

63A Tc

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

-

-

-

-

-

SILICON

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

100V

63A

0.022Ohm

253A

100V

420 mJ

BUK9Y21-40E,115 vs BUK9520-100A,127