Nexperia USA Inc. BUK9606-75B,118
- Part Number:
- BUK9606-75B,118
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3070236-BUK9606-75B,118
- Description:
- MOSFET N-CH 75V 75A D2PAK
- Datasheet:
- BUK9606-75B,118
Nexperia USA Inc. BUK9606-75B,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9606-75B,118.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- Turn On Delay Time68 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.5m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds11693pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 5V
- Rise Time144ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±15V
- Fall Time (Typ)116 ns
- Turn-Off Delay Time273 ns
- Continuous Drain Current (ID)75A
- Gate to Source Voltage (Vgs)15V
- Max Dual Supply Voltage75V
- Drain-source On Resistance-Max0.0066Ohm
- Drain to Source Breakdown Voltage75V
- Avalanche Energy Rating (Eas)852 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUK9606-75B,118 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 852 mJ.The maximum input capacitance of this device is 11693pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 273 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 68 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 75V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V 10V), this device helps reduce its power consumption.
BUK9606-75B,118 Features
the avalanche energy rating (Eas) is 852 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 273 ns
BUK9606-75B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9606-75B,118 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 852 mJ.The maximum input capacitance of this device is 11693pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 273 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 68 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 75V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V 10V), this device helps reduce its power consumption.
BUK9606-75B,118 Features
the avalanche energy rating (Eas) is 852 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 273 ns
BUK9606-75B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9606-75B,118 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
BUK9606-75B,118 More Descriptions
Transistor MOSFET N-Channel 75V 75A 3-Pin D2PAK
Trans MOSFET N-CH 75V 153A Automotive 3-Pin(2 Tab) D2PAK T/R
N-channel TrenchMOS logic level FET
Mosfet Rohs Compliant: Yes |Nexperia BUK9606-75B,118
STANDARD MARKING * REEL PACK, SMD, 13'
Trans MOSFET N-CH 75V 153A Automotive 3-Pin(2 Tab) D2PAK T/R
N-channel TrenchMOS logic level FET
Mosfet Rohs Compliant: Yes |Nexperia BUK9606-75B,118
STANDARD MARKING * REEL PACK, SMD, 13'
The three parts on the right have similar specifications to BUK9606-75B,118.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal FormPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Terminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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BUK9606-75B,11812 WeeksTinSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES3SILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2011e3Active1 (Unlimited)2EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)GULL WING3R-PSSO-G21300W TcSingleENHANCEMENT MODE300WDRAIN68 nsN-ChannelSWITCHING5.5m Ω @ 25A, 10V2V @ 1mA11693pF @ 25V75A Tc95nC @ 5V144ns5V 10V±15V116 ns273 ns75A15V75V0.0066Ohm75V852 mJNoROHS3 CompliantLead Free---------------
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--Through HoleTO-220-3----55°C~175°C TJTubeTrenchMOS™--Obsolete3 (168 Hours)---MOSFET (Metal Oxide)----96W Tc-----N-Channel-13mOhm @ 15A, 10V2.1V @ 1mA2.651pF @ 25V54A Tc20.5nC @ 5V-5V 10V±10V---------ROHS3 Compliant-TO-220AB60V------------
-
--Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™2008e3Obsolete1 (Unlimited)3EAR99-MOSFET (Metal Oxide)-3R-PSFM-T31230W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING8.5m Ω @ 25A, 10V2V @ 1mA8840pF @ 25V75A Tj--4.5V 10V±10V-----0.00995Ohm-562 mJ-ROHS3 Compliant--75VMatte Tin (Sn)8541.29.00.75FET General Purpose PowerSINGLENOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLE WITH BUILT-IN DIODETO-220AB75A440A75V
-
--Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™2000e3Obsolete1 (Unlimited)3EAR99LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)-3R-PSFM-T31157W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING14m Ω @ 25A, 10V2V @ 1mA4034pF @ 25V67A Tc35nC @ 5V-4.5V 10V±15V-----0.018Ohm-140 mJ-ROHS3 Compliant--75VTin (Sn)8541.29.00.75FET General Purpose PowerSINGLENOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLE WITH BUILT-IN DIODETO-220AB67A270A75V
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