Nexperia USA Inc. BUK9219-55A,118
- Part Number:
- BUK9219-55A,118
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2487953-BUK9219-55A,118
- Description:
- MOSFET N-CH 55V 55A DPAK
- Datasheet:
- BUK9219-55A,118
Nexperia USA Inc. BUK9219-55A,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9219-55A,118.
- Factory Lead Time26 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- HTS Code8541.29.00.75
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max114W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation114W
- Case ConnectionDRAIN
- Turn On Delay Time45 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs17.6m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2920pF @ 25V
- Current - Continuous Drain (Id) @ 25°C55A Tc
- Rise Time130ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±10V
- Fall Time (Typ)130 ns
- Turn-Off Delay Time400 ns
- Continuous Drain Current (ID)55A
- Gate to Source Voltage (Vgs)10V
- Max Dual Supply Voltage55V
- Drain-source On Resistance-Max0.02Ohm
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)219A
- Avalanche Energy Rating (Eas)120 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUK9219-55A,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2920pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 400 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 219A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The maximum dual supply voltage can be supported by 55V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
BUK9219-55A,118 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 219A.
BUK9219-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9219-55A,118 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2920pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 400 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 219A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The maximum dual supply voltage can be supported by 55V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
BUK9219-55A,118 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 219A.
BUK9219-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9219-55A,118 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
BUK9219-55A,118 More Descriptions
Single N-Channel 55 V 114 W Silicon Surface Mount Mosfet - TO-252-3
Trans MOSFET N-CH 55V 55A Automotive 3-Pin(2 Tab) DPAK T/R
N-channel TrenchMOS logic level FET
STANDARD MARKING * REEL PACK, SMD, 13'
Trans MOSFET N-CH 55V 55A Automotive 3-Pin(2 Tab) DPAK T/R
N-channel TrenchMOS logic level FET
STANDARD MARKING * REEL PACK, SMD, 13'
The three parts on the right have similar specifications to BUK9219-55A,118.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeSupplier Device PackageGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Terminal FinishSubcategoryJEDEC-95 CodeDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAdditional FeatureView Compare
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BUK9219-55A,11826 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2010e3Active1 (Unlimited)2EAR998541.29.00.75MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE114W TcENHANCEMENT MODE114WDRAIN45 nsN-ChannelSWITCHING17.6m Ω @ 25A, 10V2V @ 1mA2920pF @ 25V55A Tc130ns4.5V 10V±10V130 ns400 ns55A10V55V0.02Ohm55V219A120 mJROHS3 CompliantLead Free----------
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--Through HoleTO-220-3----55°C~175°C TJTubeTrenchMOS™--Obsolete3 (168 Hours)---MOSFET (Metal Oxide)----------96W Tc----N-Channel-13mOhm @ 15A, 10V2.1V @ 1mA2.651pF @ 25V54A Tc-5V 10V±10V---------ROHS3 Compliant-TO-220AB20.5nC @ 5V60V------
-
--Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™2008e3Obsolete1 (Unlimited)3EAR998541.29.00.75MOSFET (Metal Oxide)SINGLE-NOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING8.5m Ω @ 25A, 10V2V @ 1mA8840pF @ 25V75A Tj-4.5V 10V±10V-----0.00995Ohm-440A562 mJROHS3 Compliant---75VMatte Tin (Sn)FET General Purpose PowerTO-220AB75A75V-
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--Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™2010e3Obsolete1 (Unlimited)3EAR998541.29.00.75MOSFET (Metal Oxide)SINGLE-NOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE118W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING18m Ω @ 25A, 10V2V @ 1mA2210pF @ 25V54A Tc-4.5V 10V±10V-----0.021Ohm-217A115 mJROHS3 Compliant---55VMatte Tin (Sn)FET General Purpose PowerTO-220AB54A55VLOGIC LEVEL COMPATIBLE
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