BUK9219-55A,118

Nexperia USA Inc. BUK9219-55A,118

Part Number:
BUK9219-55A,118
Manufacturer:
Nexperia USA Inc.
Ventron No:
2487953-BUK9219-55A,118
Description:
MOSFET N-CH 55V 55A DPAK
ECAD Model:
Datasheet:
BUK9219-55A,118

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Comments
Specifications
Nexperia USA Inc. BUK9219-55A,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9219-55A,118.
  • Factory Lead Time
    26 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchMOS™
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • HTS Code
    8541.29.00.75
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    114W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    114W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    45 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    17.6m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2920pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    55A Tc
  • Rise Time
    130ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    130 ns
  • Turn-Off Delay Time
    400 ns
  • Continuous Drain Current (ID)
    55A
  • Gate to Source Voltage (Vgs)
    10V
  • Max Dual Supply Voltage
    55V
  • Drain-source On Resistance-Max
    0.02Ohm
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    219A
  • Avalanche Energy Rating (Eas)
    120 mJ
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BUK9219-55A,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2920pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.As a result of its turn-off delay time, which is 400 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 219A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The maximum dual supply voltage can be supported by 55V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

BUK9219-55A,118 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 219A.


BUK9219-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9219-55A,118 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
BUK9219-55A,118 More Descriptions
Single N-Channel 55 V 114 W Silicon Surface Mount Mosfet - TO-252-3
Trans MOSFET N-CH 55V 55A Automotive 3-Pin(2 Tab) DPAK T/R
N-channel TrenchMOS logic level FET
STANDARD MARKING * REEL PACK, SMD, 13'
Product Comparison
The three parts on the right have similar specifications to BUK9219-55A,118.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    HTS Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    Supplier Device Package
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Terminal Finish
    Subcategory
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Additional Feature
    View Compare
  • BUK9219-55A,118
    BUK9219-55A,118
    26 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchMOS™
    2010
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    8541.29.00.75
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    114W Tc
    ENHANCEMENT MODE
    114W
    DRAIN
    45 ns
    N-Channel
    SWITCHING
    17.6m Ω @ 25A, 10V
    2V @ 1mA
    2920pF @ 25V
    55A Tc
    130ns
    4.5V 10V
    ±10V
    130 ns
    400 ns
    55A
    10V
    55V
    0.02Ohm
    55V
    219A
    120 mJ
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUK9515-60E,127
    -
    -
    Through Hole
    TO-220-3
    -
    -
    -
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    -
    -
    Obsolete
    3 (168 Hours)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    96W Tc
    -
    -
    -
    -
    N-Channel
    -
    13mOhm @ 15A, 10V
    2.1V @ 1mA
    2.651pF @ 25V
    54A Tc
    -
    5V 10V
    ±10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    TO-220AB
    20.5nC @ 5V
    60V
    -
    -
    -
    -
    -
    -
  • BUK9509-75A,127
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    2008
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    8541.29.00.75
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    230W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    8.5m Ω @ 25A, 10V
    2V @ 1mA
    8840pF @ 25V
    75A Tj
    -
    4.5V 10V
    ±10V
    -
    -
    -
    -
    -
    0.00995Ohm
    -
    440A
    562 mJ
    ROHS3 Compliant
    -
    -
    -
    75V
    Matte Tin (Sn)
    FET General Purpose Power
    TO-220AB
    75A
    75V
    -
  • BUK9520-55A,127
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    2010
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    8541.29.00.75
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    118W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    18m Ω @ 25A, 10V
    2V @ 1mA
    2210pF @ 25V
    54A Tc
    -
    4.5V 10V
    ±10V
    -
    -
    -
    -
    -
    0.021Ohm
    -
    217A
    115 mJ
    ROHS3 Compliant
    -
    -
    -
    55V
    Matte Tin (Sn)
    FET General Purpose Power
    TO-220AB
    54A
    55V
    LOGIC LEVEL COMPATIBLE
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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