Nexperia USA Inc. BUK7M33-60EX
- Part Number:
- BUK7M33-60EX
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2485501-BUK7M33-60EX
- Description:
- MOSFET N-CH 60V MLFPAK
- Datasheet:
- BUK7M33-60EX
Nexperia USA Inc. BUK7M33-60EX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK7M33-60EX.
- Factory Lead Time26 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-1210, 8-LFPAK33
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeR-PSSO-G4
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max44W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs33m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds628pF @ 25V
- Current - Continuous Drain (Id) @ 25°C24A Tc
- Gate Charge (Qg) (Max) @ Vgs10.9nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)24A
- Drain-source On Resistance-Max0.033Ohm
- Pulsed Drain Current-Max (IDM)98A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)10.3 mJ
- RoHS StatusROHS3 Compliant
BUK7M33-60EX Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 10.3 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 628pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 24A.Pulsed drain current is maximum rated peak drain current 98A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7M33-60EX Features
the avalanche energy rating (Eas) is 10.3 mJ
based on its rated peak drain current 98A.
a 60V drain to source voltage (Vdss)
BUK7M33-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7M33-60EX applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 10.3 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 628pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 24A.Pulsed drain current is maximum rated peak drain current 98A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7M33-60EX Features
the avalanche energy rating (Eas) is 10.3 mJ
based on its rated peak drain current 98A.
a 60V drain to source voltage (Vdss)
BUK7M33-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7M33-60EX applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
BUK7M33-60EX More Descriptions
BUK7M33-60E - N-channel 60 V, 33 mΩ standard level MOSFET in LFPAK33
60V 24A 33m´Î@10V5A 44W 4V@1mA N Channel SOT-1210 MOSFETs ROHS
Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Nexperia BUK7M33-60EX
Trans MOSFET N-CH 60V 24A 8-Pin LFPAK-33 T/R
ELITE PROGRAM PART - BUK7M33-60E/SOT1210/mLFPAK
REEL 7"" Q1/T1 *STANDARD MARK SMD
60V 24A 33m´Î@10V5A 44W 4V@1mA N Channel SOT-1210 MOSFETs ROHS
Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Nexperia BUK7M33-60EX
Trans MOSFET N-CH 60V 24A 8-Pin LFPAK-33 T/R
ELITE PROGRAM PART - BUK7M33-60E/SOT1210/mLFPAK
REEL 7"" Q1/T1 *STANDARD MARK SMD
The three parts on the right have similar specifications to BUK7M33-60EX.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountReference StandardJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageJESD-609 CodeECCN CodeTerminal FinishHTS CodeSubcategoryQualification StatusJEDEC-95 CodeView Compare
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BUK7M33-60EX26 WeeksSurface MountSOT-1210, 8-LFPAK33YESSILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q1012016Active1 (Unlimited)4MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED8AEC-Q101; IEC-60134R-PSSO-G41SINGLE WITH BUILT-IN DIODE44W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING33m Ω @ 5A, 10V4V @ 1mA628pF @ 25V24A Tc10.9nC @ 10V60V10V±20V24A0.033Ohm98A60V10.3 mJROHS3 Compliant---------
-
-Through HoleTO-220-3---55°C~175°C TJTubeTrenchMOS™-Obsolete1 (Unlimited)-MOSFET (Metal Oxide)---------62W Tc--N-Channel-75mOhm @ 10A, 10V4V @ 1mA483pF @ 25V20.3A Tc-55V10V±20V-----ROHS3 CompliantTO-220AB-------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)TrenchMOS™2008Active1 (Unlimited)-MOSFET (Metal Oxide)---------158W Tc--N-Channel-26mOhm @ 25A, 10V4V @ 1mA2385pF @ 25V45A Tc48nC @ 10V75V10V±20V-----ROHS3 CompliantDPAK-------
-
-Through HoleTO-220-3NOSILICON-55°C~175°C TJTubeTrenchMOS™1999Obsolete1 (Unlimited)3MOSFET (Metal Oxide)SINGLE-NOT SPECIFIEDNOT SPECIFIED3-R-PSFM-T31SINGLE WITH BUILT-IN DIODE138W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING40m Ω @ 40A, 10V4V @ 1mA2293pF @ 25V37A Tc-100V10V±20V37A0.04Ohm149A100V31 mJROHS3 Compliant-e3EAR99Tin (Sn)8541.29.00.75FET General Purpose PowerNot QualifiedTO-220AB
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