BUK7M33-60EX

Nexperia USA Inc. BUK7M33-60EX

Part Number:
BUK7M33-60EX
Manufacturer:
Nexperia USA Inc.
Ventron No:
2485501-BUK7M33-60EX
Description:
MOSFET N-CH 60V MLFPAK
ECAD Model:
Datasheet:
BUK7M33-60EX

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Specifications
Nexperia USA Inc. BUK7M33-60EX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK7M33-60EX.
  • Factory Lead Time
    26 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-1210, 8-LFPAK33
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • Reference Standard
    AEC-Q101; IEC-60134
  • JESD-30 Code
    R-PSSO-G4
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    44W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    33m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    628pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    24A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    10.9nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    24A
  • Drain-source On Resistance-Max
    0.033Ohm
  • Pulsed Drain Current-Max (IDM)
    98A
  • DS Breakdown Voltage-Min
    60V
  • Avalanche Energy Rating (Eas)
    10.3 mJ
  • RoHS Status
    ROHS3 Compliant
Description
BUK7M33-60EX Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 10.3 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 628pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 24A.Pulsed drain current is maximum rated peak drain current 98A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

BUK7M33-60EX Features
the avalanche energy rating (Eas) is 10.3 mJ
based on its rated peak drain current 98A.
a 60V drain to source voltage (Vdss)


BUK7M33-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7M33-60EX applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
BUK7M33-60EX More Descriptions
BUK7M33-60E - N-channel 60 V, 33 mΩ standard level MOSFET in LFPAK33
60V 24A 33m´Î@10V5A 44W 4V@1mA N Channel SOT-1210 MOSFETs ROHS
Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.027Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Nexperia BUK7M33-60EX
Trans MOSFET N-CH 60V 24A 8-Pin LFPAK-33 T/R
ELITE PROGRAM PART - BUK7M33-60E/SOT1210/mLFPAK
REEL 7"" Q1/T1 *STANDARD MARK SMD
Product Comparison
The three parts on the right have similar specifications to BUK7M33-60EX.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Supplier Device Package
    JESD-609 Code
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Qualification Status
    JEDEC-95 Code
    View Compare
  • BUK7M33-60EX
    BUK7M33-60EX
    26 Weeks
    Surface Mount
    SOT-1210, 8-LFPAK33
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101
    2016
    Active
    1 (Unlimited)
    4
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    8
    AEC-Q101; IEC-60134
    R-PSSO-G4
    1
    SINGLE WITH BUILT-IN DIODE
    44W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    33m Ω @ 5A, 10V
    4V @ 1mA
    628pF @ 25V
    24A Tc
    10.9nC @ 10V
    60V
    10V
    ±20V
    24A
    0.033Ohm
    98A
    60V
    10.3 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUK7575-55A,127
    -
    Through Hole
    TO-220-3
    -
    -
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    -
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    62W Tc
    -
    -
    N-Channel
    -
    75mOhm @ 10A, 10V
    4V @ 1mA
    483pF @ 25V
    20.3A Tc
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    TO-220AB
    -
    -
    -
    -
    -
    -
    -
  • BUK7226-75A/C1,118
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    2008
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    158W Tc
    -
    -
    N-Channel
    -
    26mOhm @ 25A, 10V
    4V @ 1mA
    2385pF @ 25V
    45A Tc
    48nC @ 10V
    75V
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    DPAK
    -
    -
    -
    -
    -
    -
    -
  • BUK7540-100A,127
    -
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    1999
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    3
    -
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    138W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    40m Ω @ 40A, 10V
    4V @ 1mA
    2293pF @ 25V
    37A Tc
    -
    100V
    10V
    ±20V
    37A
    0.04Ohm
    149A
    100V
    31 mJ
    ROHS3 Compliant
    -
    e3
    EAR99
    Tin (Sn)
    8541.29.00.75
    FET General Purpose Power
    Not Qualified
    TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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