NXP USA Inc. BUK761R7-40E/GFJ

Name: BUK761R7-40E/GFJ
Brand: NXP USA Inc.
SKU: 3586838-BUK761R7-40E/GFJ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK761R7-40E/GFJ

Manufacturer:: NXP USA Inc.

Ventron No:: 3586838-BUK761R7-40E/GFJ

Description:: MOSFET N-CH D2PAK

ECAD Model:

Datasheet:: BUK761R7-40E

Specifications

NXP USA Inc. BUK761R7-40E/GFJ technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BUK761R7-40E/GFJ.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Packaging
Tape & Reel (TR)
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

BUK761R7-40E/GFJ Overview
Its overall power consumption can be reduced by using drive voltage (10V).

BUK761R7-40E/GFJ Features

BUK761R7-40E/GFJ Applications
There are a lot of NXP USA Inc.
BUK761R7-40E/GFJ applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BUK761R7-40E/GFJ More Descriptions

TRIAC SENS GATE 400V 0.6A TO92-3
STANDARD MARKING * REEL PACK, SMD, 13'
MOSFET N-CH D2PAK

Product Comparison

The three parts on the right have similar specifications to BUK761R7-40E/GFJ.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Contact Plating

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Series

JESD-609 Code

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

FET Feature

Radiation Hardening

Mount

HTS Code

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Terminal Finish

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
BUK761R7-40E/GFJ

NXP USA Inc.

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Tape & Reel (TR)

2016

Obsolete

1 (Unlimited)

10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK7107-40ATC,118

Nexperia USA Inc.

Surface Mount

TO-263-5, D2Pak (4 Leads Tab), TO-263BB

Tape & Reel (TR)

2008

Obsolete

1 (Unlimited)

10V

±20V

RoHS Compliant

Tin

YES

5

SILICON

-55°C~175°C TJ

Automotive, AEC-Q101, TrenchMOS™

e3

4

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

5

R-PSSO-G4

1

272W Tc

Single

ENHANCEMENT MODE

272W

DRAIN

2 μs

N-Channel

SWITCHING

7m Ω @ 50A, 10V

4V @ 1mA

4500pF @ 25V

75A Tc

108nC @ 10V

5.7μs

6.8 μs

8.9 μs

140A

20V

40V

0.007Ohm

40V

1400 mJ

Temperature Sensing Diode

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BUK761R7-40E/GFJ vs BUK7107-40ATC,118
BUK7516-55A,127

Nexperia USA Inc.

Through Hole

TO-220-3

Tube

-

Obsolete

1 (Unlimited)

10V

±20V

RoHS Compliant

Tin

-

3

SILICON

-55°C~175°C TJ

TrenchMOS™

e3

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

-

3

-

1

138W Tc

Single

ENHANCEMENT MODE

138W

DRAIN

16 ns

N-Channel

SWITCHING

16m Ω @ 25A, 10V

4V @ 1mA

2245pF @ 25V

65.7A Tc

-

70ns

41 ns

57 ns

3.8A

20V

55V

0.016Ohm

55V

120 mJ

-

No

Surface Mount

8541.29.00.75

TO-220AB

65.7A

-

-

-

-

-

-

-

-

-

-

-

BUK761R7-40E/GFJ vs BUK7516-55A,127
BUK7535-55A,127

Nexperia USA Inc.

Through Hole

TO-220-3

Tube

2011

Obsolete

1 (Unlimited)

10V

±20V

-

-

NO

-

SILICON

-55°C~175°C TJ

TrenchMOS™

e3

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

-

3

R-PSFM-T3

1

85W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

35m Ω @ 20A, 10V

4V @ 1mA

872pF @ 25V

35A Tc

-

-

-

-

-

-

-

0.035Ohm

-

49 mJ

-

-

-

8541.29.00.75

TO-220AB

35A

Tin (Sn)

ESD PROTECTED

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

Not Qualified

SINGLE WITH BUILT-IN DIODE

55V

139A

55V

BUK761R7-40E/GFJ vs BUK7535-55A,127