Nexperia USA Inc. BUK663R2-40C,118
- Part Number:
- BUK663R2-40C,118
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2849983-BUK663R2-40C,118
- Description:
- MOSFET N-CH 40V 100A D2PAK
- Datasheet:
- BUK663R2-40C
Nexperia USA Inc. BUK663R2-40C,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK663R2-40C,118.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2010
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Reach Compliance Codenot_compliant
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max204W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation204W
- Case ConnectionDRAIN
- Turn On Delay Time40 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.2m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2.8V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds8020pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs125nC @ 10V
- Rise Time87ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±16V
- Fall Time (Typ)117 ns
- Turn-Off Delay Time224 ns
- Continuous Drain Current (ID)100A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage40V
- Drain-source On Resistance-Max0.0057Ohm
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)697A
- RoHS StatusROHS3 Compliant
BUK663R2-40C,118 Overview
A device's maximum input capacitance is 8020pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 224 ns.Its maximum pulsed drain current is 697A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK663R2-40C,118 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 224 ns
based on its rated peak drain current 697A.
BUK663R2-40C,118 Applications
There are a lot of Nexperia USA Inc.
BUK663R2-40C,118 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 8020pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 224 ns.Its maximum pulsed drain current is 697A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK663R2-40C,118 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 224 ns
based on its rated peak drain current 697A.
BUK663R2-40C,118 Applications
There are a lot of Nexperia USA Inc.
BUK663R2-40C,118 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
BUK663R2-40C,118 More Descriptions
Transistor MOSFET N-Channel 40V 100A 3-Pin D2PAK
N-channel TrenchMOS intermediate level FET
PFET, 100A I(D), 40V, 0.0057OHM,
STANDARD MARKING * REEL PACK, SMD, 13'
NEXPERIA BUK663R2-40C - 100A, 40
N CH MOSFET, TRENCH AUTOMOTIVE, 40V, 100A, 4-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
N-channel TrenchMOS intermediate level FET
PFET, 100A I(D), 40V, 0.0057OHM,
STANDARD MARKING * REEL PACK, SMD, 13'
NEXPERIA BUK663R2-40C - 100A, 40
N CH MOSFET, TRENCH AUTOMOTIVE, 40V, 100A, 4-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to BUK663R2-40C,118.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal FormReach Compliance CodePin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusDrain to Source Voltage (Vdss)Supplier Device PackageView Compare
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BUK663R2-40C,11816 WeeksTinSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYES3SILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2010e3Obsolete1 (Unlimited)2MOSFET (Metal Oxide)GULL WINGnot_compliant3R-PSSO-G21204W TcSingleENHANCEMENT MODE204WDRAIN40 nsN-ChannelSWITCHING3.2m Ω @ 25A, 10V2.8V @ 1mA8020pF @ 25V100A Tc125nC @ 10V87ns10V±16V117 ns224 ns100A20V40V0.0057Ohm40V697AROHS3 Compliant---
-
12 WeeksTinThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-3--55°C~175°C TJTubeAutomotive, AEC-Q101, TrenchMOS™2010-Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-not_compliant3--204W TcSingle-204W-40 nsN-Channel-3.6m Ω @ 25A, 10V2.8V @ 1mA8020pF @ 25V100A Tc125nC @ 10V87ns4.5V 10V±16V117 ns224 ns100A20V40V-40V-Non-RoHS Compliant--
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16 Weeks-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2010-Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-not_compliant3--263W Tc-----N-Channel-3.4m Ω @ 25A, 10V2.8V @ 1mA11516pF @ 25V120A Tc191nC @ 10V-4.5V 10V±16V--------Non-RoHS Compliant55V-
-
--Surface MountTO-263-7, D2Pak (6 Leads Tab), TO-263CB----55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™--Last Time Buy1 (Unlimited)-MOSFET (Metal Oxide)-----300W Tc-----N-Channel-2.3mOhm @ 90A, 10V2.8V @ 1mA16pF @ 25V228A Tc253nC @ 10V-10V±16V--------ROHS3 Compliant55VD2PAK
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