BSS84-7-F

Diodes Incorporated BSS84-7-F

Part Number:
BSS84-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
2484630-BSS84-7-F
Description:
MOSFET P-CH 50V 130MA SOT23-3
ECAD Model:
Datasheet:
BSS84-7-F

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Specifications
Diodes Incorporated BSS84-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84-7-F.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    BSS84-7-F
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    10Ohm
  • Additional Feature
    HIGH RELIABILITY, LOW THRESHOLD
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -50V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -130mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    300mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10 Ω @ 100mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    130mA Ta
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    130mA
  • Threshold Voltage
    -800mV
  • Gate to Source Voltage (Vgs)
    20V
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS84-7-F Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 45pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 130mA. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -800mV threshold voltage. Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (5V), this device helps reduce its overall power consumption.

BSS84-7-F Features
a continuous drain current (ID) of 130mA
the turn-off delay time is 18 ns
a threshold voltage of -800mV
a 50V drain to source voltage (Vdss)


BSS84-7-F Applications
There are a lot of Diodes Incorporated
BSS84-7-F applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
BSS84-7-F More Descriptions
Transistor: P-MOSFET; unipolar; -50V; -130mA; 10ohm; 300mW; -55 150 deg.C; SMD; SOT23
P-Channel 50 V 10 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
MOSFET P-Channel 50V 0.13A SOT23 | Diodes Inc BSS84-7-F
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Source Voltage Vds:-50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: 130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -130mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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