Diodes Incorporated BSS84-7-F
- Part Number:
- BSS84-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2484630-BSS84-7-F
- Description:
- MOSFET P-CH 50V 130MA SOT23-3
- Datasheet:
- BSS84-7-F
Diodes Incorporated BSS84-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84-7-F.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierBSS84-7-F
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance10Ohm
- Additional FeatureHIGH RELIABILITY, LOW THRESHOLD
- SubcategoryOther Transistors
- Voltage - Rated DC-50V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-130mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max300mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10 Ω @ 100mA, 5V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
- Current - Continuous Drain (Id) @ 25°C130mA Ta
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±20V
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)130mA
- Threshold Voltage-800mV
- Gate to Source Voltage (Vgs)20V
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS84-7-F Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 45pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 130mA. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -800mV threshold voltage. Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (5V), this device helps reduce its overall power consumption.
BSS84-7-F Features
a continuous drain current (ID) of 130mA
the turn-off delay time is 18 ns
a threshold voltage of -800mV
a 50V drain to source voltage (Vdss)
BSS84-7-F Applications
There are a lot of Diodes Incorporated
BSS84-7-F applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 45pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 130mA. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -800mV threshold voltage. Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (5V), this device helps reduce its overall power consumption.
BSS84-7-F Features
a continuous drain current (ID) of 130mA
the turn-off delay time is 18 ns
a threshold voltage of -800mV
a 50V drain to source voltage (Vdss)
BSS84-7-F Applications
There are a lot of Diodes Incorporated
BSS84-7-F applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
BSS84-7-F More Descriptions
Transistor: P-MOSFET; unipolar; -50V; -130mA; 10ohm; 300mW; -55 150 deg.C; SMD; SOT23
P-Channel 50 V 10 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
MOSFET P-Channel 50V 0.13A SOT23 | Diodes Inc BSS84-7-F
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Source Voltage Vds:-50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: 130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -130mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
P-Channel 50 V 10 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3
MOSFET P-Channel 50V 0.13A SOT23 | Diodes Inc BSS84-7-F
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Source Voltage Vds:-50V; On Resistance
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.2 W
MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: 130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -130mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: -20V
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