Nexperia USA Inc. BSS84,215
- Part Number:
- BSS84,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478934-BSS84,215
- Description:
- MOSFET P-CH 50V 130MA SOT-23
- Datasheet:
- BSS84,215
Nexperia USA Inc. BSS84,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS84,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max250mW Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation250mW
- Turn On Delay Time3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10 Ω @ 130mA, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 25V
- Current - Continuous Drain (Id) @ 25°C130mA Ta
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Turn-Off Delay Time7 ns
- Continuous Drain Current (ID)-130mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-50V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- RoHS StatusROHS3 Compliant
BSS84,215 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 45pF @ 25V.This device has a continuous drain current (ID) of [-130mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-50V, the drain-source breakdown voltage is -50V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
BSS84,215 Features
a continuous drain current (ID) of -130mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 7 ns
a 50V drain to source voltage (Vdss)
BSS84,215 Applications
There are a lot of Nexperia USA Inc.
BSS84,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 45pF @ 25V.This device has a continuous drain current (ID) of [-130mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-50V, the drain-source breakdown voltage is -50V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
BSS84,215 Features
a continuous drain current (ID) of -130mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 7 ns
a 50V drain to source voltage (Vdss)
BSS84,215 Applications
There are a lot of Nexperia USA Inc.
BSS84,215 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
BSS84,215 More Descriptions
Transistor: P-MOSFET, unipolar, -50V, -0.13A, 10ohm, 0.25W, -65 150 deg.C, SMD, SOT23
BSS84 Series 50 V 100 Ohm P-Channel Enhancement Mode D-MOS Transistor SOT-23
NEXPERIA - BSS84,215 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 6 ohm, SOT-23, Oberflächenmontage
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, -50V, -130MA, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:250mW; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 130 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) mOhm = 6 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 7 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 250
BSS84 Series 50 V 100 Ohm P-Channel Enhancement Mode D-MOS Transistor SOT-23
NEXPERIA - BSS84,215 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 6 ohm, SOT-23, Oberflächenmontage
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, -50V, -130MA, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:250mW; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 130 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) mOhm = 6 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 7 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 250
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