BSS84,215

Nexperia USA Inc. BSS84,215

Part Number:
BSS84,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478934-BSS84,215
Description:
MOSFET P-CH 50V 130MA SOT-23
ECAD Model:
Datasheet:
BSS84,215

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Specifications
Nexperia USA Inc. BSS84,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS84,215.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    250mW Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    250mW
  • Turn On Delay Time
    3 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10 Ω @ 130mA, 10V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    45pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    130mA Ta
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    7 ns
  • Continuous Drain Current (ID)
    -130mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -50V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • RoHS Status
    ROHS3 Compliant
Description
BSS84,215 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 45pF @ 25V.This device has a continuous drain current (ID) of [-130mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-50V, the drain-source breakdown voltage is -50V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

BSS84,215 Features
a continuous drain current (ID) of -130mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 7 ns
a 50V drain to source voltage (Vdss)


BSS84,215 Applications
There are a lot of Nexperia USA Inc.
BSS84,215 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
BSS84,215 More Descriptions
Transistor: P-MOSFET, unipolar, -50V, -0.13A, 10ohm, 0.25W, -65 150 deg.C, SMD, SOT23
BSS84 Series 50 V 100 Ohm P-Channel Enhancement Mode D-MOS Transistor SOT-23
NEXPERIA - BSS84,215 - Leistungs-MOSFET, p-Kanal, 50 V, 130 mA, 6 ohm, SOT-23, Oberflächenmontage
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P CH, -50V, -130MA, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:250mW; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 130 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) mOhm = 6 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 7 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 250
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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