Infineon Technologies BSS139L6327HTSA1

Name: BSS139L6327HTSA1
Brand: Infineon Technologies
SKU: 3071701-BSS139L6327HTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS139L6327HTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 3071701-BSS139L6327HTSA1

Description:: MOSFET N-CH 250V 100MA SOT-23

ECAD Model:

Datasheet:: BSS139L6327HTSA1

Specifications

Infineon Technologies BSS139L6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS139L6327HTSA1.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
360mW Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
14Ohm @ 0.1mA, 10V
Vgs(th) (Max) @ Id
1V @ 56μA
Input Capacitance (Ciss) (Max) @ Vds
76pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100mA Ta
Gate Charge (Qg) (Max) @ Vgs
3.5nC @ 5V
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
0V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
100mA
Input Capacitance
76pF
FET Feature
Depletion Mode
Rds On Max
14 Ω
RoHS Status
RoHS Compliant

Description

BSS139L6327HTSA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 76pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (0V 10V).

BSS139L6327HTSA1 Features
a continuous drain current (ID) of 100mA
a 250V drain to source voltage (Vdss)

BSS139L6327HTSA1 Applications
There are a lot of Infineon Technologies
BSS139L6327HTSA1 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

BSS139L6327HTSA1 More Descriptions

Trans MOSFET N-CH 250V 0.1A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to BSS139L6327HTSA1.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Input Capacitance

FET Feature

Rds On Max

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

View Compare
BSS139L6327HTSA1

Infineon Technologies

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

SOT-23-3

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2013

Obsolete

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

360mW Ta

N-Channel

14Ohm @ 0.1mA, 10V

1V @ 56μA

76pF @ 25V

100mA Ta

3.5nC @ 5V

250V

0V 10V

±20V

100mA

76pF

Depletion Mode

14 Ω

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

Discontinued

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

360mW Ta

N-Channel

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS139L6327HTSA1 vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

360mW Ta

N-Channel

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

100V

4.5V 10V

±20V

-

-

-

-

Non-RoHS Compliant

YES

SILICON

e0

3

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

DUAL

GULL WING

R-PDSO-G3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

0.17A

10Ohm

100V

6 pF

BSS139L6327HTSA1 vs BSS123 E6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2002

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

360mW Ta

N-Channel

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

2.5nC @ 10V

100V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSS139L6327HTSA1 vs BSS119 E7978